• 전자통신동향분석
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• 제38권1호
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

• Korean Chemical Engineering Research
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• 제51권1호
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• pp.93-97
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• 2013

소형 충전물을 이용한 수평형 증류 장치를 제작하여 실험실 규모의 증류실험을 실시하였다. 직경 6.7 mm Raschig 링 형태의 스테인레스 스틸 충전물을 넣은 40 mm 직경의 유리관을 증류탑으로 사용하였다. 증류관의 길이 방향으로 5개의 독립된 전기가열기를 배열하여 증류관 내부 온도를 분리 조절할 수 있도록 하였다. 증류관 내의 온도가 길이에 따라 연속적으로 변화하도록 조절함으로써 각각의 온도에 상응하는 기-액 평형을 형성하여 분리가 가능하도록 하였다. 증류실험의 결과 증류관의 증류단 상당길이(HETP)가 수직형 증류관에 비해 큰 것을 알았으며, 실용화가 가능한 처리용량과 분리효율을 얻었다.

• 설비공학논문집
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• 제24권4호
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• pp.306-314
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• 2012

Several numerical or analytical models have been proposed to analyze the thermal response of vertical ground heat exchangers (GHEX). However, most models are valid only after several hours of operation since they neglect the heat capacity of the borehole. Recently, the short time response of the GHEX became important in system simulation to improve efficiency. In this paper, a simple new method to evaluate the short time response of the GHEX by using an analogy model of electric circuit transient analysis was presented. The new transient heat exchanger model adopting the concept of thermal capacitance of the borehole as well as the steady-state thermal resistance showed the transient thermal resistance of the borehole. The model was validated by in-situ thermal response test and then compared with the DST model of the TRNSYS program.

• 한국수소및신에너지학회논문집
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• 제31권1호
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• pp.122-131
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• 2020

To reduce emissions from coal-fired power plants, researchers focusing on coal and biomass co-firing technology. Biomass, with its carbon-neutral nature and lower quantities of nitrogen and sulfur compared with coals, has a positive impact on coal-fired power generation. Many studies on the combustion of biomass have been conducted, but the study on the combustion characteristics of biomass char is limited. FERPM predicts char combustion characteristics with high accuracy by introducing experimental data-based parameters of biomass char and has not yet been applied in numerical simulation. In this study, FERPM is numerically applied to char combustion of wood pellets representing wood-based biomass and the combustion characteristics are compared with the kinetic/diffusion limited model, intrinsic model, and diffusion limited model.

• 조명전기설비학회논문지
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• 제29권1호
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• pp.22-30
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• 2015

Currently, in South Korea, 'Light Pollution Prevention Act by Artificial Lighting' has been enforced. For advertising lighting, it is limited based on only the light-emitting luminance. Luminance is a concept related to the glare. Not only the luminance of the light source, but also glare is affected depending on some situations like blinking, luminance contrast, background illuminance. This study conducted glare subjective evaluation with brightness, color, and blinking by looking at the LED lighting box. The results showed that the glare indexes were higher about 2 times in a decrease of background illuminance from 100lx to 0lx. The glare index of R, G, B light was higher than that of white light. The average glare index of the blue light was higher about 8 times compared to 2,700K. And the blink rate had little effect on the glare, but it affected the irritation. Therefore, the glare effect of light color and blinking needs to be considered for the standard of luminous environment.

• Nuclear Engineering and Technology
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• 제24권2호
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• pp.168-177
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• 1992

이상유동 현상의 해석은 원자력 발전소의 각계통과 가압경수형 원자로의 안전성 분석, 각종 열 수력학적 현상의 해석 그리고 타 산업체의 필요성에 의해 그 연구의 중대성이 커지고 있다. 이러한 이상유동의 현상 해석에 있어서 국부적 영역에서의 기포계수 결정은 매우 중요하다. 본 연구에서는 이러한 이상유동시 국부적 기포계수의 측정을 위하여 원자로내 부수로를 모사한 수직사각 유로를 제작하였다. 또한 국부적 영역에서의 기포계수 측정에 적합한 것으로 알려진 전기탐침 및 그 부가회로를 제작하였으며, 완성된 탐침을 이용하여 실제 비등이 발생하는 실험용 유로내에서 국부적 기포계수의 측정을 시도하였다. 실험 결과 제작된 전기탐침 및 그부가회로의 타당성을 확인 할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.392-395
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• 2003

For the first time, the new dual trench gate Emitter Switched Thyristor is proposed for eliminating snap-back effect which leads to a lot of serious problems of device applications. Also, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in the proposed EST structure, allowing higher maximum controllable current densities for ESTs. Moreover, the new dual trench gate allows homogenous current distribution throughout device and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $354/{\S}^2$, respectively. But the proposed EST exhibits snap-back with the anode voltage and current density 0.93V and $58A/{\S}^2$, respectively. Saturation current density of the proposed EST at anode voltage 6.11V is $3797A/{\S}^2$. The characteristics of 700V forward blocking of the proposed EST obtained from two dimensional numerical simulations (MEDICI) is described and compared with that of the conventional EST.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• 센서학회지
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• 제31권1호
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.474-474
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• 2013

PDMS는 미세패턴을 위해 소프트 리소그래피 널리 활용되어질 뿐만 아니라, 재질이 투명하고 탄성과 강한 내구성을 갖고 있어 유연한 광학 및 전자소자에 이용될 수 있다. 최근에는, 이러한 PDMS를 서브파장구조(subwavelength grating structure)를 형성하거나 텍스쳐(texture)표면구조를 이용한 효과적인 반사방지막(antireflection coating)기판을 제작하여 태양전지 및 디스플레이 소자의 성능을 발전시키는 연구가 활발히 진행되고 있다. 한편, 수열합성법(hydrothermal method)이나 전기화학증착법(electrodeposition method)으로 비교적 간단한 공정을 통해서 다양한 기판위에 산화아연(ZnO) 나노막대(nanorod)를 수직정렬로 성장시킬 수 있는데, 이러한 구조는 반사방지특성의 유효 굴절률 분포(effective refractive index profile)를 갖고 있기 때문에 LED나 태양전지에 성능을 개선할 수 있다. 이에 본 연구에서는 수열합성법을 통해 성장된 수직 정렬된 산화아연 나노막대를 이용한 PDMS 표면의 미세패턴 형성하여 광학적 특성을 분석하였다. 실험을 위해, 스퍼터링을 통해서 산화아연 시드층을 형성한 후, 질산아연헥사수화물과 헥사메틸렌테트라민을 수용액에 담가두어 산화아연 나노막대를 성장시켰으며, PDMS의 베이스와 경화제의 질량비를 10：1으로 용액을 준비하여 수직 정렬된 산화아연 나노막대 표면을 casting method으로 코팅하여 열경화 처리하였다. 제작된 샘플의 형태, 구조 광특성을 관찰하기 위해서 전계방출형전자현미경, X선 회절 분석기, 분광 광도계를 이용하였다.