• Journal of IKEEE
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• v.24 no.1
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• pp.194-199
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• 2020

The threshold voltage roll-off for an asymmetric junctionless double gate MOSFET is analyzed according to the top and bottom gate oxide thicknesses. In the asymmetric structure, the top and bottom gate oxide thicknesses can be made differently, so that the top and bottom oxide thicknesses can be adjusted to reduce the leakage current that may occur in the top gate while keeping the threshold voltage roll-off constant. An analytical threshold voltage model is presented, and this model is in good agreement with the 2D simulation value. As a result, if the thickness of the bottom gate oxide film is decreased while maintaining a constant threshold voltage roll-off, the top gate oxide film thickness can be increased, and the leakage current that may occur in the top gate can be reduced. Especially, it is observed that the increase of the bottom gate oxide thickness does not affect the threshold voltage roll-off.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.144-145
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• 2003

VCSEL은 우수한 소자 특성과 표면 발광 구조가 갖는 여러 가지 장점들로 인하여 병렬 광연결과 근거리 광섬유 통신에서 이상적인 광원으로 인정받고 있다. 특히 산화막 구경을 갖는 VCSEL은 이득영역 근처에서 횡 방향으로 광학적, 전기적 제한을 가함으로써 낮은 문턱전류와 높은 전력변환 효율을 갖기 때문에 현재까지 많은 연구가 진행되어 왔다. 본 논문에서는 in-situ 광 반사법을 이용한 VCSEL의 MBE 성장과 1■10 산화막 구경 VCSEL 어레이의 제작공정, 그리고 발진특성에 대하여 논하고자 한다. (중략)

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.150.1-150.1
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• 2017

구조용 합금 중 가장 우수한 비강도를 나타내는 마그네슘 및 마그네슘 합금은 최근 자동차, 항공, 기계 및 전자산업 등 다양한 산업분야에서 이용되고 있다. 하지만 마그네슘 합금은 반응성이 매우 커서 쉽게 부식되는 단점이 있다. 따라서 최근 내식성 향상을 위한 표면처리 기술에 대한 연구의 필요성이 증대되고 있으며, 그 중 플라즈마 전해산화법(Plasma electrolytic oxidation)은 양극산화반응을 이용하여 고내식성, 고경도의 산화피막을 금속 표면에 형성시키는 방법으로 많은 연구가 진행되고 있다. 본 연구에서는 탄산이온이 포함된 수용액에서 수산화나트륨의 농도가 AZ31 마그네슘 합금의 플라즈마전해산화 피막형성에 미치는 영향에 대해 알아보았다. 다양한 농도의 수산화나트륨 용액에서 DC 전류를 인가하여 플라즈마전해산화 피막을 형성하였다. 탄산 이온이 포함된 수용액에서 수산화나트륨의 농도가 높아질수록 플라즈마 전해산화 피막의 형성전압은 낮아지며, 초기 피막 형성전압 상승 속도 또한 빠르게 증가하며 피막 형성전압 등락의 폭은 감소하는 것으로 나타났다.

• Resources Recycling
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• v.10 no.4
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• pp.18-23
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• 2001

Air pollutants, phenol was generated in case of thermal regeneration of used activated carbon loaded with phenol and because of this problem, removal process of phenol were studied. Electrolytic oxidation of samples, used S.company granular activated carbon (WS-GAC), used C.company granular activated carbon (WC-GAC) and used L.company granular activated carbon (WL-GAC) loaded with phenol carried out by potentiostatic method in this study. In case of experiment was to come into operation in condition of samples containing 100 mg/g phenol, supporting electrolyte was 1.0% sodium chloride solution, Ti-Ir (10$\times$10$\textrm{cm}^2$) electrode and electrode distance was 2 cm, current density was $1.25 A/dm^2$, Obtained from the results of electrolytic oxidation experiments were not detected residual phenol. And then we knew about reaction time of electrolytic oxidation, current density, concentration of supporting electrolyte and electrode and electrode distance were 60 minutes, 1.25 A/dm$^2$, 1.0%, 2 cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.236-236
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• 2010

알루미늄 자체에 대한 질화 기술의 어려움 때문에 현재까지는 AlN 분말을 이용한 소결 공정을 통하여 주요 부품의 제작이 되어 왔으며. Al 질화 기술보다는 아노다이징과 같은 표면 산화 공정 또는 도금과 같은 기술이 선호되어 왔다. 알루미늄 질화 기술이 잘 사용되지 않았던 이유는 알루미늄 표면에 2 5 nm 두께로 존재하는 치밀한 산화층의 높은 안정성 때문에 질화반응이 어렵기 때문이다. 이 알루미늄 산화물의 안정성은 질화물에 비교하여 5 배까지 높으며, 이런 경향은 온도가 높아짐에 따라 더욱 커지기 때문이다. 특히, 알루미늄의 낮은 기계적 물성을 향상시키기 위해서는 충분히 깊은 두께로 형성되어야 할 필요성이 높으나 알루미늄에 대한 질소의 고용도가 거의 없고 확산 계수가 매우 낮기 때문에 충분히 두꺼운 질화층의 형성이 어렵기 때문이다. 결국, 알루미늄 질화가 가능하기 위해서는 표면의 산화층을 없애야 하며, 알루미늄이 AlN이 되려는 속도는 $Al_2O_3$를 만드려는 속도보다 매우 느리므로, 잔존 산소량을 최소화 할 필요성이 있어서 고진공 분위기에서 처리되어야 한다. 일반적으로 알루미늄 질화를 위해서는 $10^{-6}\;torr$ 이하의 고진공도의 챔버가 필요하며 고순도의 반응 가스를 사용하여야 한다. 그러나 이러한 고진공하에서는 낮은 이온밀도 때문에 신속질화가 기존의 공정시간인 20시간동안, AlN층이 5um이하로 형성되었다. 본 연구에서, 알루미늄의 질화에 있어서, 표면층에 높은 전류를 걸어주어, 용융상태로 만들어주는 것이 좋다는 연구 결과를 얻었으며, 이를 토대로 신속질화를 위하여 전류밀도(전력량)에 따라 알루미늄 질화층의 형성 정도를 연구하였다. SEM, EDS, XRD등을 통해 Al의 표면에 플라즈마 질화를 통해 Al에 질소의 함유량이 증가하는 것을 확인하였으며 광학현미경을 통해 질화층의 두께와 표면조직을 확인하였다. Al 시편의 표면을 효과적으로 활성화할 수 있는 $400^{\circ}C$ 이상의 온도에서 전류밀도(전력량)와 시간의 변화에 따라 질화층이 효과적으로 형성되는 조건과 시간에 따라 두께가 증가하는 경향을 확인할 수 있었다. 이러한 신속 질화 공정을 통해 2시간 이내의 질화를 통해 40um이상의 AlN층을 형성할 수 있었다.

• Korean Chemical Engineering Research
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• v.61 no.4
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• pp.576-583
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• 2023

This study aimed to investigate the impact of enhancing the electrode conductivity and mitigating the production of hydrogen peroxide - a by-product arising from lactate oxidation - on the performance of lactate electrodes. The electrical conductivity of the electrode was improved by modifying the surface of carbon paper with single-walled carbon nanotubes. Catalase was introduced to effectively eliminate the hydrogen peroxide produced during the lactate oxidation reaction. The carbon paper electrode, with simultaneous immobilization of both lactate oxidase and catalase, yielded a current 1.7 times greater than the electrode where only lactate oxidase was immobilized. The electrode in which lactate oxidase and catalase were co-immobilized on the surface of carbon paper modified with single-walled carbon nanotubes, produced a current of 171 µA, which was more than twice as much current as the carbon paper with only lactate oxidase immobilized. The optimized electrode showed a linear response up to lactate concentration of 20 mM, confirming that it can be used as a sensor electrode.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.2
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• pp.348-354
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• 2009

It has analyzed that the device degradation by NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOSFETs. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is govern by interface traps density at the silicon/oxide interface. from the relation between the variation of threshold voltage and subthreshold slope, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. Therefore, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress engineering of nanoscale CMOSFETs.

• Journal of the Korean Chemical Society
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• v.17 no.5
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• pp.378-384
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• 1973

To investigate the mechanism of the reaction of electrolytic oxidation of iodide to iodate ions, polarization curves are determined in various kinds of solution using electrodeposited lead peroxide and platinum anodes. It was observed from the polarization curves that the limiting current is exists at concentration 1.5 M of potassium iodide, and these limiting current disappeared as potassium hydroxide was added up to concentration of 0.1 M. while in case of platinum anode, limiting current did not appear in dilute potassium iodide solution. These results are owing to the chemical reaction, $PbO_2+2I^{-}+2H^+{\to}PbO+I_2+H_{2}O$ ocurring at the surface of lead peroxide anode. Also, we studied to obtain the optimum conditions of electrolytic preparation of iodate from iodide solution using a cell without the diaphragm. The results are that; (a) addition of potassium dichromate at the anti-reducing agent is proper in concentration of 0.1 g/l, (b) electrolytic temperature is not so much effective in raising the current efficiency, (c) current efficiency is increased with current density, and (d) electrolysis is the most effective in weak alkaline solutions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.869-872
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• 2006

In this paper, the threshold voltage roll-off been analyzed for nano structure double gate FinFET. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel- framers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off Is very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed.