• Title/Summary/Keyword: 산화저항성

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Molybdeum Oxide Film Preparation by a Magnetic Null Discharge Sputtering and its Application (자기 중성방전 스퍼터링에 의한 산화몰리브덴 박막의 제작 및 그 응용)

  • Kim, Doo-Hwan;Park, Cha-Soo;Sung, Youl-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.1
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    • pp.169-175
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    • 2009
  • In this experiment molybdeum oxide($MoO_3$) films were prepared by a magnetic null discharge(MND) sputtering system and fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistance of the same with $MoO_3$ film were about 1.4[$M{\Omega}$] and 800[$k{\Omega}$] under the condition of applied voltage of 400[V]. The preferred orientation in the films changed from(100) to (210) with substrate temperature. Two XPS peaks of the $MoO_3$ photoelectron were detected at the binding energies of 228.9[eV] and 232.4[eV], while the binding energy of the O1s peak was 532.6[eV]. The substrate temperature and reactivity gives large effects to the structure and growth of the film and system is also very useful for performing the uniform reactive deposition. It can be found from the result of a $MoO_3$ film deposition that the system is very useful for performing the uniform reactive sputtering.

Study on the Efficiency of Algae Removal Using Ultrasonic Waves in Double Cisterns (초음파에 의한 2중 수조에서의 조류제거효율에 관한 연구)

  • Sim, Joo-Hyun;Seo, Hyung-Joon;Kwon, Byung-Dae
    • Journal of Korean Society of Environmental Engineers
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    • v.28 no.12
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    • pp.1310-1315
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    • 2006
  • This study examines algae removal and reduction using ultrasonic. Experiments were carried out on frequency: 28 kHz single-wave, 40 kHz multi-wave; intensity: 10, 15, 20, 25, 30 W/L; algae concentration: 500, 1000, 1700/ml; exposure time: 1, 3, 5, 7, 10, 15, 20 min. Also, We investigated algae removal and reduction in single cistern where raw water including algae was directly exposed to ultrasonic and in the double cisterns located in 4 cm from ultrasonic vibrator. The algae type used in this study was Melosira genus of Bacillariophceae. The Bacillariophceae is the representative algae which causes blockage of filter basin. Because of its resistance against oxidizers, it flows into the filter basin after sterilization. As a result of this study, the form of Bacillariophceae was completely destroyed and dissolved after the application of ultrasonic waves unlike the sterilization using oxidizers. Removal efficiency of algae using ultrasonic waves increased in proportion to intensity and exposure time of ultrasonic waves, and in double cisterns is better than single cistern.

The Effect of Oxide Compound on Electrical Resistivity and Oxidation Stability in High-temperature for Ferritic P/M Stainless Steel (산화물 혼합상이 페라이트계 P/M스테인리스강의 고온산화 및 전기저항 안정성에 미치는 영향)

  • Park, Jin-Woo;Ko, Byung-Hyun;Jung, Woo-young;Park, Dong-Kyu;Ahn, In-Shup
    • Journal of Powder Materials
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    • v.23 no.3
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    • pp.240-246
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    • 2016
  • In order to improve the high-temperature oxidation stability, sintered 434L stainless steel is studied, focusing on the effect of the addition of metallic oxides to form stable oxide films on the inner particle surface. The green compacts of Fecralloy powder or amorphous silica are added on STS434L and oxidized at $950^{\circ}C$ up to 210 h. The weight change ratio of 434L with amorphous silica is higher than that of 434L mixed with Fecralloy, and the weight increase follows a parabolic law, which implies that the oxide film grows according to oxide diffusion through the densely formed oxide film. In the case of 434L mixed with Fecralloy, the elements in the matrix diffuse through the grain boundaries and form $Al_2O_3$ and Fe-Cr oxides. Stable high temperature corrosion resistance and electrical resistivity are obtained for STS434L mixed with Fecralloy.

A Study on the High Quality and Low Cost Fabrication Technology of ZnO Thin Films for Solar Cell Applications (태양전지 응용을 위한 고품위 및 저가격 ZnO 박막 제조에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.1
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    • pp.191-196
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    • 2010
  • Aluminum doped zinc oxide (AZO) films have been prepared on Coming 7059 glass substrates by r.f. magnetron sputtering method. A powder target instead of a conventional sintered ceramic target was used in order to improve the utilization efficiency of the target and reduce the cost of the film deposition process. The influence of sputter pressure on the structural, electrical, and optical properties of AZO films were studied. The AZO films had hexagonal wurtzite structure with a preferred c-axis orientation, regardless of sputter pressure and target types. The crystallinity and degree of orientation was increased by increasing the sputter pressure. For higher sputtering pressures, a reduction of the resistivity was observed due to a increase on the mobility and the carrier concentration. The lowest resistivity of $6.5{\times}10^{-3}\;{\Omega}-cm$ and the average transmittance of 80% can be obtained for films deposited at 15 mTorr.

Preparation and Characterization of transparent electrode based on polymer/metal oxide composite via electrospinning (전기 방사를 이용한 고분자/금속산화물 복합소재 기반의 투명전극 제조 및 특성 분석)

  • Kang, Hye Ju;Jeong, Hyeon Taek
    • Journal of the Korean Applied Science and Technology
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    • v.38 no.6
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    • pp.1553-1560
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    • 2021
  • We have confirmed that optimized transmittance and surface resistance by electrospinning time, also the fabricated transparent electrode composed of silver nanofiber with excellent electrical, optical and mechanical performances is showed applicability to next generation flexible displays such as solar cells, displays, and touch screens. → We have confirmed the optimized transmittance and surface resistance by electrospinning time Also the fabricated transparent electrode composed of silver nanofiber with excellent electrical, optical and mechanical performances showed applicability to next generation flexible displays such as solar cells, displays, and touch screens.

Enhanced Electric Conductivity of Cement Composites by Functionalizing Graphene Oxide (산화그래핀 기능화에 의한 시멘트 복합체의 전기전도 특성 개선)

  • Jung-Geun Han;Jae-Hyeon Jeon;Young-Ho Kim;Jin Kim;Jong-Young Lee
    • Journal of the Korean Geosynthetics Society
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    • v.22 no.1
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    • pp.1-7
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    • 2023
  • This study has utilized self-assembled monolayers technology to improve electrical property of graphene-oxide, which has been seperated graphine powder through a chemical exfoliation. Aluminum sulfate (Al2(SO4)3) was applied on graphene-oxide as a reactant, and the fundamental research was carried out to apply on the self-sensing of cement-based construction structures. Electric resistance measurement result has shown that cement-composites with GO and Al-GO can be used as a conductor, electric resistance of GO and Al-GO contained composites improved by 10.2% and 15.9% respectively when compared to the standard cement-composite. Microstructure analyzation shown the formation of Al(OH)3 gel when Al-GO was added, which is speculated to result the smooth flow of current by improving the density of cement-composite. This implies that graphene-oxide has a possibility to be utilized as smart building materials and construction structure itself rather than just a structure.

A Comprehensive Examination of Autogenous Shrinkage in Ultra-High-Strength Concrete augmented with Graphene and Hollow Glass Powder (그래핀과 유공유리분말을 사용한 초고강도 콘크리트의 자기수축에 관한 실험적 연구)

  • Seo, Tae-Seok;Lee, Hyun-Seung;Kim, Kang-Min
    • Journal of the Korea Institute of Building Construction
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    • v.23 no.5
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    • pp.547-558
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    • 2023
  • This research delves into the fabrication of an ultra-high-strength concrete, enriched with oxidized graphene nanoplatelet(GO) and hollow glass powder(HGP), notably eschewing the conventional inclusion of silica fume(SF). The primary objective was to scrutinize the autogenous shrinkage characteristics of this innovative formulation. It was discerned that the NewMix specimen, which incorporated the cGO(sourced from Company C) and HGP, and intentionally bypassed SF, showcased a commendable 13% reduction in autogenous shrinkage relative to the benchmark(Ref) specimenthat incorporated SF. Moreover, the proclivity for crack formation owing to autogenous shrinkage in the NewMix was observed to manifested by NewMix at the juncture of cracking emerged as the apex value. Attributed to the expansive specific surface area and exemplary dispersibility of cGO, it was postulated that the concrete's pore structure benefitted from enhanced infill, leading to a reduction in autogenous shrinkage. Additionally, the cGO integration fortified the concrete's resistance to crack initiation. Consequently, such an enhancement is posied to be pivotal in mitigating crack propagation resulting from autogenous shrinkage in ultra-high-strength concrete.

Effects of Crystallite Size on Gas Sensitivity and Surface Property of Oxide Semiconductor (산화물 반도체의 결정입도가 가스감도와 표면특성에 미치는 영향)

  • Song, Guk-Hyeon;Park, Sun-Ja
    • Korean Journal of Materials Research
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    • v.3 no.4
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    • pp.319-326
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    • 1993
  • The effects of $SnO_2$ crystallite size on the powder characteristics, the resistance in air and the sensitivity to 0.5 vol % $H_2$, CO-air mixture were observed. The size of SnO, powder was controlled by calcining temperature variation ($500^{\circ}C$ ~$1100^{\circ}C$) of $\alpha$-stannic acid fabricated from $SnCl_4 \cdot xH_2O$. Its crystallite size. evaluated from TEM image, was in the range of 8-54nm. With the reduction of crystallite size, the adsoption peak of $H_2O$ on FTIR curve became more clear while the lattice parameters were invariable. As the crystallite size decreased, with elements of thick film, the temperatures showing a minimum resistance in air and a maximum sensitivity to H, gas reduced. The temperature variations were assigned to the changes of activation energy of the active adsorbates, and it was suggested that the decrease of activation energy can be one of the reasons for the' sensitivity increase with the' fine powder.

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V-Based Self-Forming Layers as Cu Diffusion Barrier on Low-k Samples

  • Park, Jae-Hyeong;Mun, Dae-Yong;Han, Dong-Seok;Gang, Yu-Jin;Sin, So-Ra;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.409-409
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    • 2013
  • 최근, 집적 소자의 미세화에 따라 늘어난 배선 신호 지연 및 상호 간섭, 그리고 소비 전력의 증가는 초고집적 소자 성능 개선에 한계를 가져온다. 이에 따라 기존의 알루미늄(Al)/실리콘 절연 산화막은 구리(Cu)/저유전율 박막(low-k)으로 대체되고 있고, 이는 소자 성능 개선에 큰 영향을 미친다. 그러나 Cu는 Si과 low-k 내부로 확산이 빠르게 일어나 소자의 비저항을 높이고, 누설 전류를 일으키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 이러한 Cu의 확산을 막기 위하여 Ta, TaN 등과 같은 확산방지막에 대한 연구가 활발히 진행되어 왔으나, 배선 공정의 집적화와 low-k 대체에 따른 공정 및 신뢰성 문제로 인해 새로운 확산방지막의 개발이 필요하게 되었다. 이를 위해, 본 연구에서는 Cu-V 합금을 사용하여 low-k 기판 위에 확산방지막을 자가 형성 시키는 공정에 대한 연구를 진행하였다. 다양한 low-k 기판에서 열처리조건에 따른 Cu-V 합금의 특성을 확인하기 위해 4-point probe를 통한 비저항 평가와 XRD (X-ray diffraction) 분석이 이뤄졌다. 또한, TEM (transmission electron microscope)을 이용하여 $300^{\circ}C$에서 1 시간 동안 열처리를 거쳐 자가형성된 V-based interlayer가 low-k와 Cu의 계면에서 균일하게 형성된 것을 확인하였다. 형성된 V-based interlayer의 barrier 특성을 평가하고자 Cu-V합금/low-k/Si 구조와 Cu/low-k/Si 구조의 leakage current를 비교 분석하였다. Cu/low-k/Si 구조는 비교적 낮은 온도에서 leakage current가 급격히 증가하는 양상을 보였으나, Cu-V 합금/low-k/Si 구조는 $550^{\circ}C$의 thermal stress 에서도 leakage current의 변화가 거의 없었다. 이러한 결과를 바탕으로 열처리를 통해 자가형성된 V-based interlayer의 Cu/low-k 간 확산방지막으로서 가능성을 검증하였다.

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Dielectric Passivation Effects for the Prevention of the Failures and for the Improvement of the Reliability in Microelectronic Thin Film Interconnections (극미세 전자소자 박막배선의 결함방지 및 신뢰도 향상을 위한 절연보호막 효과)

  • 양인철;김진영
    • Journal of the Korean Vacuum Society
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    • v.4 no.2
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    • pp.217-223
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    • 1995
  • 절연보호막에 따른 AI-1%Si 박막배선의 평균수명(MTF, Mean-Time-to-Failure) 및 electromigration에 대한 저항성, 즉 활성화에너지(Q)변화 등을 측정 비교하였다. 박막배선은 $5000\AA$두께로 열산화막 처리된 p-Si(100)기판위에 $7000\AA$의 AI-1%Si을 증착한 후 photolithography 공정으로 형성시켰다. Electromigration test를 위한 박막배선은 $3\mu$m의 폭과 $400\mu$m, $1600\mu$m의 두 가지 길이를 가지며 절연보호막 효과를 알아보기 위해 그 위에 $3000\AA$의 두께로 SiO2, PSG, Si3N4등 절연보호막을 APCVD 및 PECVD를 이용하여 각각 증착시켰다. 가속화 실험을 위해 인가된 전류밀도는 4.5X106A/cm2이었고 180, 210, $240^{\circ}C$온도에서 d.c. 인가 후의 저항변화를 측정하여 평균수명을 구한 후 Black 방정식을 이용하여 활성화에너지를 측정하였다. AI-1%Si 박막배선에서 electromigration에 대한 활성화에너지값은 $400\mu$m길이의 경우 0.44eV(nonpassivated), 0.45eV(Si3N4 passivated), 0.50 eV(PSG passivated), 그리고 0.66 eV(SiO2 passivated)로 각각 측정되었다. $1600\mu$m 길이의 AI-1%Si 박막배선 실험에서도 같은 절연보호막 효과가 관찰되었다. 따라서 SiO2, PSG, Si3N4등 절연보호막은 AI-1%Si 박막배선에서의 electromigration에 대한 저항력을 높여 결함방지효과를 보이며 수명을 향상시킨다. SiO2의 절연보호막의 경우가 AI-1%Si 박막배선의 electromigration에 대한 가장 강한 저항력을 보이며 평균수명도 높게 나타났다.

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