• Title/Summary/Keyword: 산화스트레스

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Increased Antioxidative Activities against Oxidative Stress in Saccharomyces cerevisiae KNU5377 (산화 스트레스 대한 Saccharomyces cerevisiae KNU5377의 항산화 활성의 증가)

  • Kim, Il-Sup;Yun, Hae-Sun;Yang, Ji-Young;Lee, Oh-Seok;Park, Heui-Dong;Jin, Ing-Nyol;Yoon, Ho-Sung
    • Journal of Life Science
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    • v.19 no.4
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    • pp.429-435
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    • 2009
  • Oxidative stress is a consequence of an imbalance of the defense system against cellular damage generated by reactive oxygen species (ROSs) such as superoxide anions (menadione; MD). Most organisms have evolved a variety of defense systems to protect cells from adverse conditions. In order to evaluate stress tolerance against oxidative stress generating MD, comparative analyses of antioxidant capacity, or free radical scavenger ability, were performed between S. cerevisiae KNU5377 (KNU5377) and three wild-type S. cerevisiae strains. In a medium containing 0.4 mM MD, the KNU5377 strain showed higher cell viability and antioxidant ability, and contained higher levels of trehalose, superoxide dismutase, thioredoxin system, glucose-6-phosphate dehydrogenase, and some heat shock proteins. The KNU5377 strain also produced a lower level of oxidative stress biomarker than the other three yeast strains. These results indicate that S. cerevisiae KNU5377 has a higher level of tolerance to oxidative stress due to the increased expression of cell rescue proteins and molecules, thus alleviating cellular damage more efficiently than other S. cerevisiae strains.

SREBP-1c Ablation Protects Against ER Stress-induced Hepatic Steatosis by Preventing Impaired Fatty Acid Oxidation (지방산 산화 장애 제어를 통한 SREBP-1c 결핍의 소포체 스트레스 유발 비알콜성지방간 보호작용)

  • Lee, Young-Seung;Osborne, Timothy F.;Seo, Young-Kyo;Jeon, Tae-Il
    • Journal of Life Science
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    • v.31 no.9
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    • pp.796-805
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    • 2021
  • Hepatic endoplasmic reticulum (ER) stress contributes to the development of steatosis and insulin resistance. The components of unfolded protein response (UPR) regulate lipid metabolism. Recent studies have reported an association between ER stress and aberrant cellular lipid control; moreover, research has confirmed the involvement of sterol regulatory element-binding proteins (SREBPs)-the central regulators of lipid metabolism-in the process. However, the exact role of SREBPs in controlling lipid metabolism during ER stress and its contribution to fatty liver disease remain unknown. Here, we show that SREBP-1c deficiency protects against ER stress-induced hepatic steatosis in mice by regulating UPR, inflammation, and fatty acid oxidation. SREBP-1c directly regulated inositol-requiring kinase 1α (IRE1α) expression and mediated ER stress-induced tumor necrosis factor-α activation, leading to a reduction in expression of peroxisome proliferator-activated receptor γ coactivator 1-α and subsequent impairment of fatty acid oxidation. However, the genetic ablation of SREBP-1c prevented these events, alleviating hepatic inflammation and steatosis. Although the mechanism by which SREBP-1c deficiency prevents ER stress-induced inflammatory signaling remains to be elucidated, alteration of the IRE1α signal in SREBP-1c-depleted Kupffer cells might be involved in the signaling. Overall, the results suggest that SREBP-1c plays a crucial role in the regulation of UPR and inflammation in ER stress-induced hepatic steatosis.

Hot-Carrier-Induced Degradation of Lateral DMOS Transistors under DC and AC Stress (DC 및 AC 스트레스에서 Lateral DMOS 트랜지스터의 소자열화)

  • Lee, In-Kyong;Yun, Se-Re-Na;Yu, Chong-Gun;Park, J.T.
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.2
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    • pp.13-18
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    • 2007
  • This paper presents the experimental findings on the different degradation mechanism which depends on the gate oxide thickness in lateral DMOS transistors. For thin oxide devices, the generation of interface states in the channel region and the trapped holes in the drift region is found to be the causes of the device degradation. For thick devices, the generation of interface states in the channel region is found to be the causes of the device degradation. We confirmed the different degradation mechanism using device simulation. From the comparison of device degradation under DC and AC stress, it is found that the device degradation is more significant under DC stress than one under AC stress. The device degradation under AC stress is more significant in high frequency. Therefore the hot carrier induced degradation should be more carefully considered in the design of RF LDMOS transistors and circuit design.

Cardiopulmonary and Oxidative Stress Effects of Lung Lobectomy in Dogs; Comparison of Open and Thoracoscopic Surgery (개에서 폐엽절제가 심폐기능 및 산화 스트레스 상태에 미치는 영향; 일반개흉 및 흉강경을 통한 폐엽절제술 비교)

  • Lee, Jae Yeon;Kim, Myung Cheol
    • Journal of Veterinary Clinics
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    • v.30 no.6
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    • pp.409-414
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    • 2013
  • In the present study, we investigated and compared the cardiopulmonary and oxidative stress effects of dogs undergoing open and thoracoscopic lung lobectomy. Ten healthy dogs, 5-8 years old, weighing 9-12 kg were used. The animals were randomly assigned to one of two groups according to the type of surgical procedure; open (group 1, n=5) or thoracoscopic lung lobectomy (group 2, n=5). Cardiopulmonary parameters, superoxide dismutase (SOD), catalase (CAT), and glutathione peroxidase (GPx) concentrations were measured. There were statistically significant changes in arterial blood gases values in both groups. Total anesthesia and surgical times were significantly shorter in thoracoscopic lobectomy group compared with open surgery group. Increases in plasma SOD and CAT levels, and decreases in GPx levels were observed in both groups after surgery. Significant difference in GPx levels was found when the groups were compared. The GPx level was significantly lower in the thoracoscopic lobectomy group compared with the open surgery group.

The TDDB Characteristics of Thin $SiO_2$ with Stress Voltage Polarity (스트레스전압 극성에 따른 얇은 산화막의 TDDB 특성)

  • Kim, Cheon-Soo;Yi, Kyoung-Soo;Nam, Kee-Soo;Lee, Jin-Hyo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.5
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    • pp.52-59
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    • 1989
  • The reliability of the thin thermal oxide was investigated by using constant current stress method. Polysilicon gate MOS capacitors with oxide thickness range of 20-25nm were used in this experiment. Automatic measurement and statistical data analysis which were essential in reliability evaluation of VLSI process preformed by HP 9000 computer. Based on TDDB results, defect density, breakdown charge (Qbd) and lifetime of oxide film were evaluated. According to the polarity of the stress, some different characteristics were shown. Defect density was 62/$cm^2$ at negative gate injection. The value of Qbd was about 30C/$cm^2$ at positive gate injection, and about 21C/$cm^2$ at negative. The current density acceleration factor was 1.43$cm^2$/A for negative gate injection, and 1.25$cm^2$/A for positive gate injection.

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