• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.138-139
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• 2007

탄화규소반도체소자는 wide band-gap 반도체 재료로 고전압, 고속스위칭 특성이 우수하여 차세대 전력반도체소자로 매우 유망한 소자이다. 이러한 물리적 특성으로 전력변환소자인 고전압 MOSFET 소자를 개발하기 위한 연구가 활발히 진행되고 있다. 그러나 MOS 소자에서 가장 중요한 게이트 산화막의 특성이 소자에 적용하기에는 그 특성이 많이 취약한 상태이다. 따라서 이러한 단점을 해결하여 고전압 전력변환소자로 적용하기 위하여 게이트 산화막이 필요없는 JFET 소자가 많이 연구되고 있다. 본 논문에서는 JFET 소자를 normally-off type으로 동작시키기 위하여 게이트의 구조, 도핑농도 및 게이트 폭을 조절하여 simulation를 수행하였다. 케이트의 농도 및 접합깊이에 따라 normally-on 또는 off 특성에 큰 영향을 미치고 있으며 게이트 트렌치구조의 깊이에 따라서도 영향을 받는다. 본 simulation 결과 최적의 트렌치 길이, 폭 및 농도로 소자를 구성하여 $1.3m{\Omega}cm^2$의 온-저항 특성을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.300.1-300.1
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• 2013

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 Reactive magnetron sputtering 장비를 활용하여, 50~100 mTorr의 높은 공정 압력(High pressure)에서 증착하여 SiO2 반사방지막 코팅층을 형성하였다. Ellipsometer를 이용하여 SiO2 박막층의 굴절률(Refractive index)을 측정한 결과, 공정 압력에 따라 SiO2 박막이 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, UV-Vis spectrometer를 이용하여, 450~600 nm 파장에서의 반사율(Reflectance)과 투과율(Transmittance)을 측정하여 비교, 분석하였다. 나아가 증착된 SiO2 반사방지막을 비정질 실리콘 박막 태양전지에 적용하여 효율 향상 효과를 실험하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 SiO2 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• Journal of the Korean Chemical Society
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• v.38 no.3
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• pp.241-245
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• 1994

The oxidative addition reaction has been employed to synthesize heteropolynuclear compounds containing Si-M bonding interaction between the silicon atom of silatrane, pentacoordinate silicon derivative with transannular Si-N dative bond, and the main group element. The reaction of $SnBr_2 with 1-bromosilatrane(1a) in acetonitrile gives the mixture of yellow(2a) and white(2b) solids which were isolated and charaterized by ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR and Mass spectroscopy. The yellow compound was characterized as 1-tribromotinsilatrane which had Si-Sn bonding interaction. The reaction of SnBr2 with 1-bromo-3,7,10-trimethylsilatrane(1b) in methanol gives the Sn(Ⅳ) complex, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3),$ which was characterized by various means.

• Resources Recycling
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• v.30 no.5
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• pp.25-31
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• 2021

Smelting reduction of spent lithium-ion batteries results in the production of metallic alloys in which reduced cobalt, nickel and copper coexist. In this study, we investigated the leaching of the metallic alloys containing the above three metals together with iron, manganese, and silicon. The mixture of hydrochloric acid and hydrogen peroxide as an oxidizing agent was employed, and the effect of the concentration thereof, the reaction time and temperature, and pulp density was investigated to accomplish the complete leaching of cobalt, nickel, and copper. The effect of the hydrogen peroxide concentration and pulp density on the leaching was prominent, compared to that of reaction time and temperature, especially in the range of 20 to 80℃. The complete leaching of the metals present in metallic alloys, except silicon, was accomplished using 2 M HCl and 5% H₂O₂ with a pulp density of 30 g/L for 150 min at 60℃.

• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.6
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• pp.580-585
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• 2022

In this study, the high-temperature dielectric constant of Si₃N₄ ceramics, a representative non-oxide-based radome material, was evaluated and the cause of the dielectric constant change was analyzed in relation to the oxidation behavior. The dielectric constant of Si₃N₄ ceramics was 7.79 at room temperature, and it linearly increased as the temperature increased, showing 8.42 at 1,000 ℃. As results of analyzing the microstructure and phase for the Si₃N₄ ceramics before and after heat-treatment, it was confirmed that oxidation did not occur at all or occurred only on the surface at a very insignificant level below 1,000 ℃. Based on this, it is concluded that the increase in the dielectric constant according to the temperature increase of Si₃N₄ ceramics is irrelevant to the oxidation behavior and is only due to the activation of charge polarization.

• Journal of Welding and Joining
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• v.28 no.4
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• pp.61-66
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• 2010

Silicon nitride is widely used as an engineering ceramics because it has high strength, abrasion resistance and corrosion resistance even at high temperature. However, machining of silicon nitride is difficult due to its high hardness and brittleness. Laser assisted machining(LAM) allows effective cutting using CBN tool by locally heating the cutting part to the softening temperature of YSiAlON using the laser beam. The effect of preheating depending on process parameters were studied to find out the oxidation mechanism. If silicon nitride is sufficiently preheated, the surface is oxidized and $N_2$ gas is formed and escapes from the material, thereby making the cutting process more advantageous. During laser preheating process before machining, high temperature results in strong oxidation which makes the bloating, silicate layers and micro cracks. Using the results of these experiments, preheating characteristics and oxidation behavior were found out.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.11-18
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• 1996

Grown-in defects like OISF and FPD in the large diameter(> 8 inch)of silicon crystal are characterized. It was revealed that the presence of the ring-patterned OISF would deterorate the minority life time of the silicon crystal. Through the cooling experiment from the $1250^{\circ}C$, the nucleation of the OISF was confirmed to follow the homogeneous nucleation and growth process. In addition to OISF nucleus, crystal originated particle, which was known to be closely related with FPD (Flow Pattern Defects), was found to depend on the pulling rate of the crystal. Combination of the lower rate of the pulling and the faster cooling near the $950^{\circ}C$ is proposed to be effective method in reducing the generation of these grown-in defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.393-400
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• 1999

Dendritic carbosilanes based on hyperbranched polycarbosilanes as core molecule have been prepared The core molecules were obtained by the use of hydrosilation of $HSiMe_{3-n}$$(CH_2CH=CH_2)_n$(n=2; $AB_2$,3;$AB_3$type). The hyperbranched core $AB_2\;and\; AB_3$ type polymers were generated to higher molecular dendritic carbosilanes Gn+1 by the use of hydrosilation and alkenylation sequence. The Gn+2P generations were not obtained as unified molecules by the use of hydrosilation with $HSiMeCl_2$. Gn and Gn+1 type polymers were produced to polysilol by the reaction of 9-BBN and alkali medium oxidation of hydroborated compounds. The degree for reaction has been controlled by the NMR spectroscopy.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.4
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• pp.415-423
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• 2011

HI decomposition step certainly demand catalytic reaction for efficient production of hydrogen in SI process. Platinum catalyst can apply to HI decomposition reaction as well as hydrogenation or dehydrogenation. Generally, noble metal is used as catalyst which is loaded form for getting high dispersion and wide active area. In this study, Pt was loaded onto zirconia, ceria, alumina, and silica by impregnation method. HI decomposition reaction was carried out under the condition of $450^{\circ}C$, 1atm, and $167.76h^{-1}$ (WHSV) in a fixed bed reactor for measuring catalytic activity. And property of a catalyst was observed by BET, TEM, XRD and chemisoption analysis. On the basis of experimental results, we discussed about conversion of HI according to physical properties of the loaded Pt catalyst onto each support.