• Title/Summary/Keyword: 산질화

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Improved electrical properties of reoxidized nitrided oxide film grown by rapid thermal processing (급속 열처리 방법으로 성장한 재 산화된 질화 산화막의 전기적 특성 향상)

  • 양광선;손문회;박훈수;김봉열
    • Electrical & Electronic Materials
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    • v.4 no.2
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    • pp.175-184
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    • 1991
  • 급속 열처리 방법으로 두께가 약 80.angs.C인 산화막을 성장시킨 후 950.angs.C와 1150.angs.C의 온도에서 15초-120초 동안 질화 및 재산화 공정을 수행하여 초 박막 구조의 질화 및 재산화된 질화 산화막을 성장하였다. 성장한 질화산 화막과 재 산화된 진화 산화막의 전기적 특성은 C-V, I-V, 전하 포획 및 TDDB 측정등을 통하여 분석하였다. 측정된 소자의 특성으로부터 질화 조건이 950.angs.C, 60초이고 재산화 조건이 1150.angs.C, 60초인 재산화된 질화 산화막은 전기적 스트레스 인가후에 전하 포획에 의한 평탄전압변화(.DELTA. $V_{fb}$ )와 계면 상태밀도( $D_{itm}$)의 증가가 산화막보다 적은 우수한 특성을 나타내는 것을 알 수 있었다.

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질화물 계 발광다이오드의 광추출효율 향상을 위한 나노임프린트 리소그래피 공정

  • Byeon, Gyeong-Jae;Hong, Eun-Ju;Park, Hyeong-Won;Lee, Heon
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.27.2-27.2
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    • 2009
  • 현재 질화물 계 발광다이오드는 액정소자의 백라이트유닛, 모바일폰, 차량용램프, 교통신호등 등 다양한 장치의 광원으로 사용되고 있으며, 그 응용분야는 앞으로도 크게 확대되는 추세에 있다. 이는 발광다이오드의 저전력, 장수명, 친환경적인 장점에 의한 것으로, 일반 조명용 광원으로 사용하기 위한 기술개발이 활발히 진행 중이다. 하지만 질화물 계 발광다이오드를 미래의 조명용 광원으로 사용하기 위해서는 광출력이 보다 향상되어야 한다. 발광다이오드의 광출력을 저하시키는 요인으로는 다양한 문제점이 있지만 특히 낮은 광추출특성으로인한 광출력저하 문제를 해결해야 한다. 본 연구에서는 질화물 계 발광다이오드의 광추출특성을 향상시키기 위해서 나노임프린트 리소그래피 공정을 도입하였다. UV 나노임프린트 리소그래피 공정을 통해서 p형 질화갈륨 및 인듐주석산화물 투명전극 층에 sub-micron 급 광결정패턴을 형성하였으며, 광루미네선스와 전기루미네선스 측정을 통하여 광결정패턴으로 인한 광출력 특성을 분석하였다.

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Evaporative Heat Transfer Characteristics of Droplet on Oxi-nitriding Surface (산질화 표면에서 액적의 증발열전달 특성)

  • Kim, Dae Yun;Lee, Seong Hyuk
    • Journal of ILASS-Korea
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    • v.21 no.1
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    • pp.53-57
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    • 2016
  • The present study aims to experimentally investigate the evaporative heat transfer characteristics of Oxi-nitriding SPCC surface. Moreover, the heat transfer coefficient was examined with respect to surface temperature during droplet evaporation. In fact, the nitriding surface showed significant enhancement for anticorrosion performance compared to bare SPCC surface but the thermal resistance also increased due to the formation of compound layer. From the experimental results, the evaporative behavior of sessile droplet on nitriding surface showed similar tendency with the bare surface. Total evaporation time of sessile droplet on the nitriding surface was delayed less than 5%. The difference in heat transfer coefficient increased with the surface temperature, and the maximum difference was estimated to be around 11% at $80^{\circ}C$ surface. Thus, this nitriding surface treatment method could be useful for seawater heat exchanger industries.

A Study of Effects of Ferritic Nitrocarburized Brake Disc on Its Corrosion Resistance and Braking Performances (브레이크 디스크의 산질화처리가 부식지연 및 제동특성에 미치는 영향에 관한 연구)

  • Han, Jin;Kim, Gwang Yun;Lee, Hack Ean;Lee, JeongJoo
    • Journal of Auto-vehicle Safety Association
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    • v.7 no.2
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    • pp.19-24
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    • 2015
  • Ferritic Nitro Carburizing (FNC) cast iron brake discs is known to improve corrosion resistance and brake creep groan noise as well as prevent corrosion-induced pulsation. But, it is necessary to treat honing machining on braking surface to avoid grinding noise during braking.

Fabrication of Silicon Nitride Ceramics Using Semiconductor-Waste-Si Sludge (반도체 폐 Si 슬러지를 이용한 질화규소세라믹의 제조)

  • Lee, Byong-Taek;Yoo, Jung-Ho;Kim, Hai-Doo
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1170-1175
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    • 1999
  • The microstructures and mechanical properties of $Si_3N_4$ ceramics produced by nitridation and post-sintering using semiconductor-waste-Si sludge were investigated. Lots of microcracks were observed in the waste-Si powders which contained some amounts of amorphous $SiO_2$. The nitridation rate of waste-Si compacts showed lower value than that of commercial Si powder compacts. The nitridation rate was increased with increasing nitridation temperature and then the percent of nitridation at 1470$^{\circ}C$ showed 98%. The phases of $Si_3N_4$ in the reaction-bonded bodies were mixed with ${\alpha}$ and ${\beta}$-type, and small amounts of $Si_2N_2O$ phase while those after post-sintering were ${\beta}$-$Si_3N_4$ and ${\alpha}$-Sialon. The sample post-sintered at 1950$^{\circ}C$ showed the fracture toughness of 5.6 $^MPa{\cdot}m^{1/2}$ and the fracture strength of 497 MPa which were lower than those of sintered body using commercial Si powder possibly due to the formation of ${\alpha}$-Sialon phase.

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Analysis of Heat Transfer Performance of Oxi-nitriding Surface during Droplet Evaporation (산질화 표면에서의 액적 증발 열전달 성능 분석)

  • Kim, Dae Yun;Lee, Seong Hyuk
    • Journal of ILASS-Korea
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    • v.24 no.4
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    • pp.203-208
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    • 2019
  • In general, the oxi-nitriding method is well known as such a surface treatment way for substantial enhancement in corrosion resistance, even comparable to that of titanium. However, there are still lacks of information on thermal performance of the oxi-nitriding surface being of additional compound layers on the base substrate. Above all, the quantitative measurement of its thermal performance still was not evaluated yet. Thus, the present study experimentally measures the thermal resistance of the oxi-nitriding surface during droplet evaporation and then estimates heat transfer performance with the use of the onedimensional heat transfer model in vertical direction. From the experimental results, it is found that the total evaporation time slightly increased with the thermal resistance caused by the oxi-nitriding layer, showing a maximum difference of approximately 20% with that of the bare surface. Although the heat transfer performance of oxi-nitriding surface became slightly lower than that of the bare surface, the oxi-nitriding surface exhibits much better heat transfer performance compared to titanium.

독립영양 질화세균의 분포와 이용

  • 하영철
    • The Microorganisms and Industry
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    • v.14 no.3
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    • pp.16-20
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    • 1988
  • 암모니아를 아질산또는 질산으로 산화시키는 과정인 질화작용(nitrification)은 암모니아와 함께 또 하나의 식물및 미생물에 대한 질소원인 질산의 농도를 증사시켜 생물의 생장을 뒷받침하기도 하나(Fenchel and Blackburn, 1979) 생물체의 질소원에 있어서 세가지의 불이익을 초래하기도 한다. 질산은 암모니아와는 달리 토양이나 저질토(sediment)의 cation exchange site에 흡착되지 않으므로 쉽게 손실된다(Greenland, 1958). 또 무산소상태에서는 탈질화과정 (denitrification)에 의하여 기체질소로 환원되어 생태계내에서 사라진다 (Broadbent and Clark, 1965). 끝으로 질산태의 질소가 생물체내의 질소의 주 형태인 아미노산의 질소로 되기 위해서는 암모니아로 환원되어야 하므로 질산의 동화는 상대적으로 많은 에너지를 필요로한다.

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Study on the Possible Ohmic Mechanisms of the In/In2O3:Sn p-type contacts for GaN-based Light-emitting Diodes (질화갈륨계 발광다이오드용 p형 인듐/인듐주석산화물 박막 전극의 오믹메커니즘에 대한 연구)

  • O, Jun-Ho;Hong, Hyeon-Gi;Kim, Gyeong-Guk;Byeon, Gyeong-Jae;Lee, Heon;Yun, Sang-Won;An, Jae-Pyeong;Jeon, Jun-U;Jeong, Se-Yeon;Seong, Tae-Yeon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.38-38
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    • 2008
  • 질화갈륨계 발광다이오드는 차세대 반도체 조명용 및 기타 광전소자 등에의 응용 가능성 때문에 주목을 받고 있다. 본 발표에서는 발광다이오드용 In/ITO 전극이 p-형 질화갈륨과 열처리 후 오믹접촉을 이루는 메커니즘을 설명한다.

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Preparation of Conjugated Linoleic Acid Concentrate from Vegetable Oils by Alkali Isomerization (유지의 알칼리 이성질화에 의한 Conjugated Linoleic Acid 농축물의 제조)

  • Kim, Ji-Ho;Shin, Hyo-Sun
    • Korean Journal of Food Science and Technology
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    • v.31 no.6
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    • pp.1453-1457
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    • 1999
  • The optimal conditions of alkali isomerization to obtain conjugated linoleic acid (CLA) concentrate from vegetable oils which have antioxidant and anticarcinogenic properties were studied. The result of alkali isomerization of various vegetable oils indicated that CLA content of safflower oil which contains more linoleic acid than any other vegetable oils was the highest of all experimental vegetable oils. During alkali isomerization, the amount of cis-9, trans-11 CLA and total CLA content in safflower oil was the highest at $8{\sim}11%$ KOH concentration and $180{\sim}185^{\circ}C$. But heating time had no effect on CLA formation after $20{\sim}40$ minutes. As a result of alkali isomerization of neutral lipid, glycolipid and phospholipid in safflower oil, CLA content of neutral lipid class was higher than any other lipid classes. By urea treatment and HPLC fractionation, total CLA content in alkali-isomerized safflower oil increased to 95.4% from 78.9%.

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Characteristics of reoxidation of nitried oxide for gate dielectric of charge trapping NVSM (전하트랩형 NVSM의 게이트 유전막을 위한 질화산화막의 재산화특성에 관한 연구)

  • 이상은;한태현;서광열
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.5
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    • pp.224-230
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    • 2001
  • The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

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