• Title/Summary/Keyword: 비정질 CoSiB

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The Effects of Co Addition on Glass Forming Ability and Magnetic Properties for FeSiBNb Ribbon Alloys (FeSiBNb 리본 합금의 비정질 형성능과 자기적 특성에 미치는 Co의 첨가 효과)

  • Lee, Tae-Gyu;Noh, Tae-Hwan
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.128-132
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    • 2007
  • The thermal and magnetic properties of amorphous (FeCo)SiBNb ribbon alloys with high glass forming ability have been investigated. The glass forming ability was enhanced by Co substitution in amorphous ($Fe_{1-X}Co_X)_{72}Si_4B_{20}Nb_4$ alloys with the thickness of about $40{\mu}m$. With the increase in Co content, the temperature range of supercooled liquid phase increased indicating the high glass forming ability of the Co-added alloys. Further the ac permeability increased, and the core loss decreased considerably by Co substitution, while small change in $B_8$ (magnetic flux density at 800 A/m) was observed. The frequency characteristics of permeability deteriorated as compared to conventional amorphous ribbon alloys with the thickness of about $20\;{\mu}m$ due to the increased skin effect.

Magnetization Switching of MTJs with CoFeSiB/Ru/CoFeSiB Free Layers (CoFeSiB/Ru/CoFeSiB 자유층을 갖는 자기터널 접합의 스위칭 자기장)

  • Lee, S.Y.;Lee, S.W.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.124-127
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    • 2007
  • Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

Switching Characteristics of Magnetic Tunnel Junction with Amorphous CoFeSiB Free Layer (비정질 CoFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성)

  • Hwang, J.Y.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.16 no.6
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    • pp.276-278
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    • 2006
  • The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

Influence of Layer-thickness and Annealing on Magnetic Properties of CoSiB/Pd Multilayer with Perpendicular Magnetic Anisotropy (박막 두께 및 열처리가 수직자기이방성을 갖는 CoSiB/Pd 다층박막의 자기적 특성에 미치는 영향)

  • Jung, Sol;Yim, Haein
    • Journal of the Korean Magnetics Society
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    • v.26 no.3
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    • pp.76-80
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    • 2016
  • CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

Characteristics of Magnetic Tunnel Junctions Comprising Ferromagnetic Amorphous NiFeSiB Layers (강자성 비정질 NiFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성)

  • Hwang, J.Y.;Rhee, S.R.
    • Journal of the Korean Magnetics Society
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    • v.16 no.6
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    • pp.279-282
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    • 2006
  • Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

Magnetic Bias Effects in Field-annealed CoFeSiB Amorphous Ribbons (공기 중에서 자기장 열처리된 CoFeSiB 비정질 리본에서의 자기 바이어스 효과)

  • Cha, Yong-Jun;Jeong, Jong-Ryul;Kim, Cheol-Gi;Kim, Dong-Young;Yoon, Seok-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.191-196
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    • 2009
  • Magnetic bias phenomena of field-annealed CoFeSiB amorphous ribbons showing asymmetric giant magnetoimpedance was investigated by MOKE method. The specimens removed the crystalline layer at one surface side by chemical etching were prepared and measured magnetization curves by MOKE to investigate the effect of the crystalline layer on magnetization of inner soft amorphous phase. We observed the shift of hysteresis loop, and concluded that the crystalline layer exerts bias field effect on inner soft amorphous phase and the direction of bias filed is opposite to the magnetization direction of surface crystalline layer.

Magnetoimpedance(MI) Effect due to the Removal of Skin Layer in Amorphous Metal $\textrm{Co}_{66}\textrm{Fe}_{4}\textrm{NiB}_{14}\textrm{Si}_{15}$ (표면층 제거에 대한 비정질 금속 $\textrm{Co}_{66}\textrm{Fe}_{4}\textrm{NiB}_{14}\textrm{Si}_{15}$의 자기임피턴스 효과)

  • Jo, Wan-Sik;Kim, Jong-O;Lee, Hui-Bok
    • Korean Journal of Materials Research
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    • v.7 no.9
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    • pp.728-732
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    • 1997
  • 비정질 금속 $Co_{66}$F $e_{4}$Ni $B_{14}$S $i_{15}$ 의 표면층 제거에 대한 자기임피턴스 효과는 시료의 길이방향에 평행한 일축자기장에 대하여 측정하였다. MIR(Magnetoimpedance Ratios)은 비정질 금속의 두께가 얇아짐에 따라 감소하고, 전류에 비례하여 증가하는 경향을 나타내었다. 인가전류 주파수에 대한 MIR과 자기장의 감도는 모든 시료에서 주파수에 비례하여 증가하며 수 MHz 부근에서 최대값을 가지고 점차 감소하는 경향을 나타내었다. 시료의 표면층제거에 기인한 이방성자기장의 변화는 MI $R_{Max}$을 나타내는 외부 자기장을 감소시키지만, MIR은 표면층 제거에 따른 부피효과에 기인하여 감소하였다....

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Thickness Dependence of Amorphous CoSiB/Pd Multilayer with Perpendicular Magnetic Anisotropy (비정질 강자성체 CoSiB/Pd 다층박막의 두께에 따른 수직자기이방성 변화)

  • Yim, H.I.
    • Journal of the Korean Magnetics Society
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    • v.23 no.4
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    • pp.122-125
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    • 2013
  • Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.