• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.239-244
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• 2015

Lead zirconate titanate (PZT) thick films with thickness of $10{\sim}20{\mu}m$ were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$. The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the $10{\mu}m$ thick film with solid reaction process were $20{\mu}C/cm^2$, 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.4
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• pp.549-554
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• 2013

With the synthesis of graphene on Cu using CVD, it was tried to show the behavior of graphene growth depending on the size and orientation of Cu grain. It was found out that even under the same temperature and pressure the use of different gases influences on the diffusion rate of Cu. As compared to Ar gas, Cu grain growing bigger under $H_2$ and $CH_4$ was resulted in bigger graphene grain. Corrosion resistance was evaluated by potentiodynamic polarization test in room temperature and found out that the graphene on Cu was more stable in order of 10 than pure Cu due to the chemical stability of graphene. The future work of this research will focus on the synthesis of graphene having no defects including grain boundaries, and its engineering use.

• Journal of Hydrogen and New Energy
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• v.17 no.1
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• pp.62-68
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• 2006

High temperature electrolysis is a promising technology to produce massively hydrogen using renewable and nuclear energy. Solid oxide fuel cell materials are candidates as the components of steam electrolysers. However, the polarization characteristics of the typical electrode materials during the electrolysis have not been intensively investigated. In this study, NiO electrode was deposited on YSZ electrolyte by spin coat process and firing at $1300^{\circ}C$. Pt electrode was applied on the other side of the electrolyte to compare the polarization characteristics with those by NiO during electrolysis. The $H_2$ evolution rate was also monitored by measuring the electromotive force of Lambda probe and calculated by thermodynamic consideration. At low current density, Pt showed lower cathodic polarization and thus higher current efficiency than Ni, but the oxidation of Ni into NiO caused the increase of anodic resistance with increasing current density. High overpotential induced high power consumption to produce hydrogen by electrolysis.

• Journal of Hydrogen and New Energy
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• v.21 no.6
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• pp.533-539
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• 2010

Ni-YSZ supported button cells were prepared by spray-coating YSZ and screen-printing YSZ-LSM powder as an electrolyte and oxygen electrode on Ni-YSZ cermet disks. In order to identify the polarization loss mechanism in high temperature electrolysis current-voltage characteristics coupled with electrochemical impedance spectroscopy were investigated as a function of temperature, current load, and the humidity. The effects of the different current collectors of platinum and silver for oxygen electrodes were compared. With Ag current collector two polarization losses were distinguished. The high frequency component was attributed to the Ni-YSZ cermet which was less susceptible to temperature variation but increasing in loss with humidity. The lower frequency component was attributed to the LSM electrode. Platinum current collector led to a much lower polarization loss.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.5
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• pp.551-556
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• 2018

The material normally used in hot dip galvanizing facilities is SM45C (carbon steel for mechanical structure, KS standard), mainly because of its price. During this process, the oxidation of the plating facility occurs due to the heat of the Zn fumes coming from the molten zinc. Since the cycle time of the current facilities is 6 months, much time and money are wasted. In this study, the corrosive properties of various materials (Inconel625, STS304, SM45C) were investigated by oxidation in a high temperature and Zn fumes environment. The possibility of applying the hot-dip galvanizing equipment was investigated for each material. The Zn fumes were generated by directly bubbling Ar gas into Zn molten metal in a 650 degree furnace. High-temperature, Zn fumes corrosion was conducted for 30 days. The sample was removed after 30 days and the oxidation of the surface was confirmed with EDS and SEM, and the corrosion properties were examined using potentiodynamic polarization tests.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.37-38
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• 2006

본 연구에서는 압전체의 횡 진동모드를 이용한 압전 초음파 진동자를 설계 분석하였다. 이전의 란쥬반 진동자는 진동을 얻기 위하여, 복수의 원판 또는 사각판 형태의 압전 세라믹을 서로 반대 방향으로 분극하여 마주 보도록 설치한 후 전기적으로 병렬로 연결하고 상단 및 하단에 금속부을 부착하여 전체를 볼트로 조인 복잡한 구조와 큰 출력 파워를 갚는 반면, 본 연구에서는 판상형의 압전소자와 일체형 금속진동체를 이용하여 기계적 출력 파워 조절이 용이한 구조의 압전 진동자를 고안하여, 압전진동자의 횡 진동 모드를 이용함으로써 신뢰성과 정확도가 높고 진동효율이 최대가 되도록 설계하였다. 설계 개발된 압전 진동자는 진동의 크기 조절이 용이하여 일반 진동자 뿐 만 아니라, 외과 및 안과 수술에 있어서 인체조직이나 각막상피의 활성화를 유지한 상태에서 안전하게 절개 및 분리 시술용 진동자로 사용 할 수 있는 이점이있다. 압전 진동자는 유한요소법 시뮬레이션 프로그램 (ATILA 5.2.4)을 이용하여 설계를 하였으며 압전소자의 두께는 각각 0.2 mm, 0.5 mm로 제작하여 시뮬레이션 결과와 제작된 샘플의 특성을 비교하였고, 변위측정은 칼날을 결합 한 상태에서 공진 주파수대역 부근 주파수별로 측정 비교하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.14-14
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• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• Journal of the Korea Concrete Institute
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• v.21 no.4
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• pp.409-417
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• 2009

In this study, autogenous crack healing and artificial crack healing using electrochemical electro deposition method were conducted to compare in the aspects of corrosion monitoring. Furthermore, the analysis of impressed voltage characteristics, galvanic current and linear polarization resistance comparison, and photo image processing technique were performed for quantitative comparisons of healing ratio. As a result, it was found that, in view of impressed voltage of artificial crack healing, the measured voltage was increased as time goes by. From the galvanic test results of artificial crack healing, the current vs. potential distribution value were formed widely in comparison with autogenous crack healing. In this point, it was shown that artificial crack healing has more eleatic resistance capacity than autogenous crack healing technique. Finally, it was found that artificial crack healing was 1.63 times higher than autogenous healing in view of crack healing ratio.