• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.667-673
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• 1998

Rebar corrosion in a simulated pore solution (SPS) with chloride ion was analyzed by Tafel and AC impedance method and corrosion effects of surface roughness and iron oxide layer were also investigated. Corrosion estimation of rebar by electrochemical impedance spectroscopy is very useful, and the measured value can be adapted to proposed electrochemical equivalent circuit model. Corrosion potential increased to the cathodic direction as the concentration of chloride ions increased and corrosion current had the same tendency as above. Surface films were analyzed with scanning electron microscope and Auger electron spectroscopy. Thermally oxidized layer by torch flame for 15 sec was very poor at anti-corrosive property. The corrosion rate of rebar increased as the surface roughness increased. Also, higher temperatures above RT of SPS in initial stage caused a rebar to be corroded faster.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.1
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• pp.49-54
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• 2021

In this paper, n this paper, E-polarized electromagnetic scattering problems by a resistive strip grating between a double dielectric layer are analyzed by applying the PMM(Point Matching Method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, and the resistive boundary condition is applied to analysis of the resistive strip. The numerical results for the normalized reflected and transmitted power are analyzed by according as the relative permittivity and thickness of the double dielectric layers, and the resistivity of resistive strip. Overall, when the resistivity of the resistive strip decreased or the relative permittivity of the dielectric layer increased, the reflected power increased, and as the reflected power increased, the transmitted power decreased relatively. Especially, as the relative permittivity of double dielectric layer increases, the minimum value of the variation curve of the reflected power shifted in the direction that the grating period decreased. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.141-146
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• 2009

PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.125-125
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• 2010

극성 [0001] 방향으로 성장된 질화물 기반의 LED (light emitting diode) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE)에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 InGaN/GaN이나 AlGaN/GaN 양자 우물구조를 GaN의 m-plane (1$\bar{1}$00) 이나 a-plane (11$\bar{2}$0) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성 면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. GaN 층의 표면을 평탄화하고 결정성을 향상시키기 위해서 저온 GaN 또는 AlN 버퍼층을 성장하는 2단계 방법이나 고온 버퍼층을 이용하여 성장하는 연구들이 많이 진행되고 있다. 본 연구에서는 고온 GaN 버퍼층을 이용하여 기존의 2단계 성장과정을 단순화한 비극성 a-plane GaN을 r-plane 사파이어 기판위에 유기금속 화학증착법 (MOCVD)으로 성장하였다. 사파이어 기판위에 AlN 층을 형성하기 위한 nitridation 과정 후 1030 도에서 두께 45 ~ 800 nm의 고온 GaN 버퍼층을 성장하고 총 박막 두께가 2.7 ~ 3 um 가 되도록 a-plane GaN을 성장하여 표면 양상의 변화와 결정성을 확인하였다. 또한 a-plane GaN 박막 성장 시에 성장 압력을 100 ~ 300 torr 로 조절하며 박막 성장의 변화 양상을 관찰하였다. 고온 GaN 버퍼층 성장 두께가 감소함에 따라 결정성은 증가하였으나 표면의 삼각형 형태의 pit 밀도가 증가함을 확인하였다. 또한 성장 압력이 감소함에 따라 표면 pit은 감소하였으나 결정성도 감소하는 것을 확인하였다. 성장 압력과 버퍼층 성장 두께를 조절하여 표면에 삼각형 형태의 pit이 존재하지 않는 RMS roughness 0.99 nm, 관통전위밀도 $1.78\;{\times}\;10^{10}/cm^2$, XRD 반가폭이 [0001], [1$\bar{1}$00] 방향으로 각 798, 1909 arcsec 인 a-plane GaN을 성장하였다. 이 연구를 통해 고온 GaN 버퍼 성장방법을 이용하여 간소화된 공정으로 LED 소자 제작에 사용할 수 있는 결정성 높은 a-plane GaN을 성장할 수 있는 가능성을 확인하였다.

• Geophysics and Geophysical Exploration
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• v.11 no.4
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• pp.318-325
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• 2008

Assigning an exact boundary condition is of great importance in three-dimensional (3D) magnetotelluric (MT) modeling, in which no source is considered in a computing domain. This paper presents a 3D MT modeling algorithm utilizing a Dirichlet condition for a 2D host. To compute boundary values for a model with a 2D host, we need to conduct additional 2D MT modeling. The 2D modeling consists of transverse magnetic and electric modes, which are determined from the relationship between the polarization of plane wave and the strike direction of the 2D structure. Since the 3D MT modeling algorithm solves Maxwell's equations for electric fields using the finite difference method with a staggered grid that defines electric fields along cell edges, electric fields are calculated at the same place in the 2D modeling. The algorithm developed in this study can produce reliable MT responses for a 3D model with a 2D host.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.163-167
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• 2008

The electronic structure and magnetism of superlattice systems consisted of Heusler compound $Co_2MnSi$ (CMS) and zinc-blende MnAs (MA) are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. Four superlattice systems are considered, that is CMS(m)/MA(n), where m and n, being either 2 or 4, denote the number of alternatingly arrayed layers of the compounds in a superlattice along [001] direction. From the calculated total magnetic moments as well as the total density of states, it is found that neither of the four systems is half-metallic. It is also found that the Mn atoms are antiferromagnetically coupled in the systems of CMS2/MA2 and CMS2/MA4. The total and atom-resolved density of states of the four superlattices are compared with those of the bulk $Co_2MnSi$ and MnAs, and the influences of the change in the systems symmetry on the magnetism and half-metallicity are discussed.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.196-202
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• 2003

We investigated the effect of both 4 types additives and $0.5wt\%\;Pb_3O_4$ which have been reported to show an improvement on the performance of Zinc anode. And Experimental methods such as corrosion potential measurement, potentiodynamic polorization test and charging-discharging cycle life test were carried out in $40 wt\%$ KOH with $Pb_3O_4(0.5, \;10\;&\;2.0wt\%)$ and 4 types additives $(0.4wt\%\;of\;Ca(OH)_2$, 0.025M of Citrate, Tartrate and Gluconate). Corrosion potential was shifted to high direction and also changed to high and low direction repeatedly with increasing of $Pb_3O_4$ quantity. However by adding $0.5wt\%\;Pb_3O_4$, corrosion potential shifted to low direction and showed stable condition. Furthermore it was well known that corrosion resistance was predominantly increased compared to no addition and improved charging-discharging property with adding additives. By SEM analysis, it was concluded that the morphology of surface in case of only $0.5wt\%\;Pb_3O_4$ addition was nearly the same as that of Tartrate additive and in the other additives such as $Ca(OH)_2$, Citrate, Tartrate and Gluconate, their morphologies showed dendrite growth. Eventually it was thought that the additive of Tartrate indicated comparatively good corrosion resistance effect as well as charging-discharging property improvement among those four types additives.