• Defense and Technology
• /
• no.5 s.267
• /
• pp.52-59
• /
• 2001

본딩은 전기/전자 시스템뿐만 아니라 연료, 엔진, 비행제어, 유/공압계통 등에서도 안전한 전기적인 운용을 하기 위해서 필요하다. 항공기 개발에서 본딩은 설계시부터 요구조건을 두어 엄격히 관리해야 하며, 제작시에도 제시된 요구조건에 맞게 본딩을 해야 한다. 항공기의 전기/전자계통 설계시 요구성능과 항공기 및 운용자의 안전성 확보를 본딩 계통의 설계목표로 설정하고, 세부적인 본딩 요구조건과 유사기종의 설계개념을 보완하여 현실적으로 적용가능한 적용분야별 본딩 설치 및 설계 요구조건을 정립하는 것이 매우 필수적이라고 판단된다. 이 글에서는 항공기 설계시 고려해야 되는 본딩 일반요구조건에 대하여 기술해 보고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.171-171
• /
• 2008

본 연구는 초음파 알루미늄 웨지 및 금 볼 본딩을 동시에 적용 가능한 본딩 Pad의 금속학적 안정성을 고려한 표층전극 형성 방법에 관한 것이다. 특히, 이동통신 및 전장용 모듈의 복합 및 융합화로 LTCC기판 패키징에 있어서 다양한 본딩 기술이 요구되고 있다. 전통적인 interconnection 기술인 Au ball 본딩 및 초음파 에너지를 이용한 Al wedge 본딩 기술이 동시에 사용되어야 하는 패키지 구조의 경우 본딩 패드의 표층전극 설계는 서로 상충되는 조건이 요구된다. 따라서, 본 연구에서는 LTCC기판의 표층전극의 Metal finish 방법으로 이용되는 ENEPIG(무전해 Ni/Pd/Au도금)공법으로 Au ball 본딩 및 초음파 Al wedge 본딩을 동시에 가능하게 하는 solution을 제시하여 패키징 자유도뿐만 아니라 Interconnection 신뢰성을 확보할 수 있었다.

• Proceedings of the Korean Information Science Society Conference
• /
• 2011.06a
• /
• pp.388-390
• /
• 2011

가상 네트워크는 가상 머신을 가상 링크로 연결해서 구성된다. 가상 링크는 하나의 물리적 채널을 여러개의 논리적 채널로 분할해서 사용할 수도 있고, 이와는 반대로 다수의 물리적 채널을 하나의 논리적 채널로 통합하여 사용할 수도 있다. 본 논문에서는 기존의 채널 본딩을 발전시킨 가상 네트워크를 위한 채널 본딩 기술을 제안한다. 기존의 채널 본딩 기술은 동일한 하드웨어, 동일한 네트워크 대역폭의 제한이 있는 반면 가상 네트워크를 위한 채널 본딩 기술은 하드웨어, 대역폭의 제한을 두지 않고 다양한 하드웨어와 대역폭을 지원할수 있도록 하였다. 이는 가상 머신간에 네트워크 대역폭을 나눠서 사용함으로 인해 가상 머신 위에서 다수의 네트워크 인터페이스가 동일한 대역폭을 지원받는 것이 어렵기 때문이다. 가상 네트워크를 위한 채널 본딩 기술의 성능을 측정하여 본딩된 채널만큼 성능이 향상됨을 알 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.382-383
• /
• 2006

본 연구에서는 열처리 본딩장비를 실제로 개발하여 Al/Sus와 Al/Al의 두 재료를 서로 본딩 하였다. 열처리 본딩 실험을 하기 위해서 열처리시에 온도분포를 정확히 파악하기 위해서 컴퓨터모의실험으로 같은 재료인 Al/Al과 서로 다른 재료인 Al/Sus의 온도분포를 나타내었다. 본딩된 두 가지의 sample들을 FESEM으로 접합부의 표면조직 상태를 측정하였고 인장력측정 장치로 bonding strength를 측정하였다. 접착제를 사용한 본딩 sample 보다는 더 본딩 결합력이 크다는 것을 확인할 수 있었다.

• Korean Chemical Engineering Research
• /
• v.45 no.5
• /
• pp.479-486
• /
• 2007

Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.

• The Journal of the Convergence on Culture Technology
• /
• v.4 no.3
• /
• pp.209-212
• /
• 2018

Anisotropic conductive film(ACF) bonding is widely used for making fine interconnections between two different materials where soldering is not easily applicable. There are three constraints for the successful implementation of ACF bonding. A bonding contact should be pressed by a hot head with the right pressure and temperature for a pre-defined curing time. In this paper, a method for ACF bonding based on machine vision system is proposed and verified through some experiments. The system calculates the position and orientation of printed circuit boards(PCBs) on a bonding table and estimates the optimal hitting point where the hot head should be applied. Experimental results show that the proposed system achieves better adhesive strength by providing head flatness over contact surfaces.

• Korean Chemical Engineering Research
• /
• v.45 no.5
• /
• pp.466-472
• /
• 2007

A technology platform for wafer-level three-dimensional integration circuits (3D-ICs) is presented, and that uses wafer bonding with low-k polymeric adhesives and Cu damascene inter-wafer interconnects. In this work, one of such technical platforms is explained and characterized using a test vehicle of inter-wafer 3D via-chain structures. Electrical and mechanical characterizations of the structure are performed using continuously connected 3D via-chains. Evaluation results of the wafer bonding, which is a necessary process for stacking the wafers and uses low-k dielectrics as polymeric adhesive, are also presented through the wafer bonding between a glass wafer and a silicon wafer. After wafer bonding, three evaluations are conducted; (1) the fraction of bonded area is measured through the optical inspection, (2) the qualitative bond strength test to inspect the separation of the bonded wafers is taken by a razor blade, and (3) the quantitative bond strength is measured by a four point bending. To date, benzocyclobutene (BCB), $Flare^{TM}$, methylsilsesquioxane (MSSQ) and parylene-N were considered as bonding adhesives. Of the candidates, BCB and $Flare^{TM}$ were determined as adhesives after screening tests. By comparing BCB and $Flare^{TM}$, it was deduced that BCB is better as a baseline adhesive. It was because although wafer pairs bonded using $Flare^{TM}$ has a higher bond strength than those using BCB, wafer pairs bonded using BCB is still higher than that at the interface between Cu and porous low-k interlevel dielectrics (ILD), indicating almost 100% of bonded area routinely.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.32 no.4
• /
• pp.293-300
• /
• 2016

Purpose: The purpose of this study is finding proper bonding agents to be used when adding bis-acryl composite provisional materials. Materials and Methods: Three bonding agents with different chemical compositions were included in this study. Forty disk shaped specimens of bis-acryl composite provisional material were prepared and divided into 4 groups according to the bonding agents. Control group didn't have bonding agent. Through the Teflon mould with 4.0 mm diameter hole with 4.0 mm thickness the same bis-acryl composite provisional material was added on the disks after the surface of each specimen was treated with designated bonding agent according to the manufacturer's instructions. Shear bond test was performed and the fractured surfaces were inspected with a microscope. One-way analysis of variance was conducted and the result was further analysed with Turkey post hoc test at the significance level of 0.05. Results: The highest strength was acquired from the specimens bonded with chemical cure system and it was statistically significant (P < 0.05). This group showed 100% cohesive failures. The lowest bonding strength was recorded from the specimens used conventional light cure bonding agent, and this group's result was similar with the control group. The group used a light cure bonding agent claiming improved compatibility revealed significantly higher bond strength to the traditional light cure bonding agent group in a statistically significant way (P = 0.043). Conclusion: According to the bonding agent used the shear bond strength was significantly affected. Therefore the choice of proper bonding agent is important when hiring a bonding agent to add bis-acryl composite provisional materials.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.17-23
• /
• 2013

As a basic research to develop stretchable electronic packaging technology, CNT-Ag composite pads were formed on top of Cu/Sn chip bumps and flip-chip bonded using anisotropic conductive adhesive. Average contact resistances of the flip-chip joints were measured with respect to bonding pressure and presence of the CNT-Ag composite pads. When Cu/Sn chip bumps with CNT-Ag composite pads were flip-chip bonded to substrate Cu pads at 25MPa or 50 MPa, contact resistance was too high to measure. The specimen processed by flip-chip bonding the Cu/Sn chip bumps with CNT-Ag composite pads to the substrate Cu pads exhibited an average contact resistance of $213m{\Omega}$. On the other hand, the flip-chip specimens processed by bonding Cu/Sn chip bumps without CNT-Ag composite pads to substrate Cu pads at 25MPa, 50MPa, and 100MPa exhibited average contact resistances of $370m{\Omega}$, $372m{\Omega}$, and $112m{\Omega}$, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.1
• /
• pp.7-13
• /
• 2013

3D stacked IC is one of the promising candidates which can keep Moore's law valid for next decades. IC can be stacked through various bonding technologies and they were reviewed in this report, for example, wafer direct bonding and atomic diffusion bonding, etc. As an effort to reduce the high temperature and pressure which were required for high bonding strength in conventional Cu-Cu thermo-compression bonding, surface activated bonding, solid liquid inter-diffusion and direct bonding interface technologies are actively being developed.