• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.1-7
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• 2024

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (R_a) remained similar to substrate R_a, but higher substrate R_a led to decreased crystallinity. Nb substrate with 0.83 ㎛ R_a exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ R_a showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm^-1 diamond peak in R_aman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

• Nuclear Engineering and Technology
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• v.18 no.3
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• pp.209-217
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• 1986

The inlet coolant temperature reduction technique has been used to extend the load follow operation further in the end-of-cycle-life(EOL). In order to simulate the technique and calculate the nuclear characteristics of a PWR core according to the load follow operation, the three dimensional computing system has been established. The analysis was performed in both MINB and SPINR modes of typical 12-3-6-3 locad follow operation for the EOL of KNU-1 plant. Moreover, the capability of return-to-power has been also tested for those two modes with the system analysis by the RETRAN-02 code. The results show that it has no difficulty to extend the load follow operation further in the EOL by applying the inlet coolant temprature reduction, and also the spinning reserve capacity(SRC) increases by 13% in MINB mode and 14% in SPINR mode Bore that used by control rods only, for 14$^{\circ}$ F drop in the inlet temperature.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.465-468
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• 2014

The crystallization effects of boron (B) powder on the phase, full width at half maximum (FWHM) values, and critical properties were investigated for in-situ reacted $MgB_2$ bulk superconductors. The semi-crystalline B powder was heat-treated at different temperatures of 1000, 1300 and $1500^{\circ}C$ for 5 hours in an Ar atmosphere. Then, using as-received and heat-treated B powders, the $MgB_2$ samples were prepared at $600^{\circ}C$ for 40 hours in an Ar atmosphere. As the heat-treatment temperature of the B powder increased, both the particle size of the B powder and crystalline phase increased. In the case of $MgB_2$ samples using B powders heat-treated at above $1300^{\circ}C$, unreacted magnesium (Mg) and B remained due to the improved crystallinity of the B powder. As the heat-treatment temperature of B powder increased, the critical current density of $MgB_2$ decreased continuously due to the reduction of grain boundary density and superconducting volume caused by unreacted Mg and B.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• Composites Research
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• v.27 no.4
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• pp.123-129
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• 2014

Ceramic matrix composites (CMCs) consist of such reinforcements as carbides, nitrides, borides and oxides, which have high melting points, low density, high modulus and high strength, for the purpose of increasing toughness. These materials are used for heat shielding systems for aerospace vehicles, high-temperature gas turbine combustion chambers, turbine blades, stator vane parts, etc. Oxide CMCs are used for the components of burner and flame holder and the high-temperature gas duct. CMCs are also applied to brake disks, which are subjected to severe thermal shock, and slide bearing parts under heavy loads. The research and development of the CMC are progressed for the strategic purpose in defense and energy industry; for instance, for aerospace applications in the U.S., and for hyper-speed aircraft, gas turbines, and atomic fissions in U.S., Japan, and Europe.

• Laser Solutions
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• v.16 no.3
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• pp.1-10
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• 2013

In this study, Al-Si coated boron steel(1.2 mm) were laser welded by $CO_2$ laser and hot-stamping was applied to the laser joints. Tensile properties and microstructures of the joints were investigated before and after hot-stamping. Tensile and yield strengths of the as welded specimen similar with base metal and fracture occurred base metal of boron steel. Although, in case of heat treated specimen, fracture occurred fusion zone that Al segregated zone near the bond line. These could be explained by the existence of ferrite, in the Al segregated zone near the bond line and base metal of boron steel. Before hot-stamping, hardness of base metal is lower than fusion zone and heat affected zone in spite of exist Al segregation zone($Fe_3$(Al,Si)). So fracture occurred base metal. Although, after hot-stamping, microstructure of base metal and welds zone transformed to martensite and bainite except in Al segregation zone near the bond line that $Fe_3$(Al,Si) transformed to a-ferrite. So fracture occurred Al segregation zone near the bond line.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.37-42
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• 2004

Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.1611-1619
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• 2015

This study examined the toughness improvement of a track shoe used as the undercarriage of excavator and bulldozer parts. The excavator is operated under poor conditions, such as the build-up field and quarry. Therefore, the track shoe requires high strength and impact toughness to endure immense shock while at work. The track shoe was made of heat treated boron steel. The sufficient possibility of hardenability with the theoretical Jominy curve for boron steel was confirmed while quenching. The Taguchi orthogonal array experiment method was used to optimize the process variables, such as area reduction ratio and heat treatment conditions (tempering temperature and holding time), to achieve toughness improvement. The toughness of the track shoe increased with increasing area reduction, and a tempering temperature of $210^{\circ}C$ and a tempering time of 80 min are beneficial for improving the toughness of the track shoe.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.12-12
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• 2002

hexagonal Boron Nitride (hBN), rhombohedral Boron Nitride (rBN)과 고밀도의 wurzitic Boron N Nitride (wBN), cubic Boron Nitride (cBN) 등의 다양한 상을 갖는 Boron nitride는 그 결정구조에 따라 저밀도, 고밀도 박막으로 분류되며 이중 hBN과 rBN은 층간 결합이 약한 $sp^2$ 결합특성을 가지고, wBN 과 cBN은 강한 $sp^3$ 결합특성을 가지고 있다. 현재까지 $sp^3$결합을 갖는 BN의 우수한 특성을 응용하기 위한 수 많은 연구들이 있어왔다. 특히 cBN은 다이아몬드에 버금가는 높은 경도뿐만 아니라 높은 화 학적 안정성 및 열전도성 등 우수한 물리화학적 특성을 가지고 있어 마찰.마모, 전자, 광학 등의 여러 분야에서의 산업적 응용이 크게 기대되고 있다. 그러나 이와 같이 BN박막의 기계적 물성과 관련한 연 구는 많이 진행되어 왔으나 전기.전자적, 광학적 특성에 관한 연구는 미비한 실정이다. 따라서 본 연구에서는 BN박막의 또 다른 웅용 분야를 탐색하고자 ME - ARE (Magnetically Enhanced A Activated Reactive Evaporation)법 에 의 해 합성 된 BN박막의 광학적 특성 에 관하여 조사하였다. BN박 막합성 은 전자총에 의 해 증발된 보론과 질소.아르곤 플라즈마의 활성 화반응증착(Activated Reactive E Evaporation)에 의해 이루어졌다. 기존의 ARE장치와 달리 열음극(hot cathode)과 양극(anode)사이에 평 행자기장을 부가하여 플라즈마의 증대시켜 반웅효율을 높였다. 합성실험용 모재로는 기본적인 특성 분 석을 위해 p-type으로 도핑된 (100) Si웨이퍼를 $30{\times}40mm$크기로 절단 후, 10%로 희석된 완충불산용액 에 10분간 침적하여 표면의 산화층을 제거한 후 사용하였으며, 광학특성 분석을 위해 $30{\times}30mm$의 glass를 아세톤으로 탈지.세척한 후 사용하였다. 박막합성실험에서 BN의 광학적 특성에 미치는 공정변수의 영향을 파악하기 위하여, 기판바이어스 전압, discharge 전류, $Ar/N_2$가스 유량비 등을 달리하여 증착하였다. 증착된 박막은 FTIR 분석을 통하 여 결정성을 확인하였으며, AFM 분석을 통하여 코팅층의 두께를 측정하였고, UV - VIS spectormeter를 이용하여 투광특성을 평가하였다.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.781-789
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• 2019

The prediction of Jominy hardness curves and the effect of alloying elements on the hardenability of boron steels (19 different steels) are investigated using multiple regression analysis. To evaluate the hardenability of boron steels, Jominy end quenching tests are performed. Regardless of the alloy type, lath martensite structure is observed at the quenching end, and ferrite and pearlite structures are detected in the core. Some bainite microstructure also appears in areas where hardness is sharply reduced. Through multiple regression analysis method, the average multiplying factor (regression coefficient) for each alloying element is derived. As a result, B is found to be 6308.6, C is 71.5, Si is 59.4, Mn is 25.5, Ti is 13.8, and Cr is 24.5. The valid concentration ranges of the main alloying elements are 19 ppm < B < 28 ppm, 0.17 < C < 0.27 wt%, 0.19 < Si < 0.30 wt%, 0.75 < Mn < 1.15 wt%, 0.15 < Cr < 0.82 wt%, and 3 < N < 7 ppm. It is possible to predict changes of hardenability and hardness curves based on the above method. In the validation results of the multiple regression analysis, it is confirmed that the measured hardness values are within the error range of the predicted curves, regardless of alloy type.