• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.411-415
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• 2003

In this paper, a reflector type frequency doubler for local oscillator at 24GHz is designed and fabricated with ne71300-N MESFET. Optimum source and load impedances are decided through a multiharmonic load pull simulation technique. A conversion gain ran be improved using the reflector and fundamental and third harmonics are well suppressed with open stub of λ/4 length. Measured results show output power at 0dBm of input power is -3.776dBm, conversion gain 0.736dB, harmonic suppression 41.064dBc, respectively.

• Journal of Navigation and Port Research
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• v.28 no.1
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• pp.37-41
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• 2004

In this paper, a reflector type frequency doubler for local oscillator at 24GHz is designed and fabricated with ne71300-N MESFET. Optimum source and load impedances are decided through a multiharmonic load pull simulation technique. A conversion gain can be improved using the reflector and fundamental and third harmonics are well suppressed with open stub of $\lambda$/4 length Measured results show output power at 0dBm of input power is -3.776dBm, conversion gain 0.736dB, harmonic suppression 41.064dBc, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.698-701
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• 2008

본 논문에서는 상용소자의 특성과 상향변환기의 모듈에 소요되는 링크전력을 비교 분석하여 Ka-band VSAT UPCONVERTER를 설계하였다. $30GHz{\sim}31GHz$대역에서 2W 출력신호를 나타내기 위하여 상향변환시스템은 IF증폭단, 감쇄기, 믹서단, 대역통과필터 및 2W 전력증폭단으로 구성시켰으며 상용MMIC를 이용하여 설계된 상향변환모듈은 $6.29dBm{\sim}7.88dBm$의 출력전력, 이득은 $23.19{\sim}28.15dB$을 Cain flatness는 4.95dB를 나타내었다. 최종단의 전력증폭기는 $33.75{\sim}34.96dBm$의 출력전력을 나타내었으며 이득은 $38.5{\sim}41.98dB$로 측정되었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.379-385
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• 2002

In this paper, frequency trifler fur 8 GHz local oscillator was designed and fabricated using MESFET. The third order harmonic was generated by biasing the transistor on A class. The fundamental frequency and the second harmonic were suppressed by using λ$\_$g//2 stub and band pass filter. As results, conversion gain of 2.67 ㏈ at 8.31 GHz, the harmonic suppression of -41.17 ㏈c, the bandwidth of 510 ㎒ were measured.red.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.771-773
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• 2014

본 논문에서는 장거리 레이더용 차량 충돌 방지 77-GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 변환 손실 및 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 수동형 인덕터 대신 전송선(Transmission Line) 을 이용하였다. 본 논문에서 설계한 믹서는 약 5.2dB의 우수한 변환이득 특성과 2.1dBm의 우수한 IIP3 특성을 보였다.

• Journal of the Institute of Convergence Signal Processing
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• v.2 no.4
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• pp.71-76
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• 2001

In this paper we propose the Digital Automatic Gain Controller for IEEE 802.11a-High-speed Physical Layer in the 5 GHz Band. The input gain it estimated by calculating the energy of the training symbol that it a synchronizing signal. The renewal gain is calculated by comparing the estimated gain with the ideal gain. The renewal gain is converted into the controlled voltage for GCA to reduce or amplify the input signals. We used a piecewise-linear approximation to reduce the hardware size. The gain control is performed seven times to provide more accurate gain control. The proposed automatic gain controller is designed with VHDL and verified by using the Xilinx FPGA.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.49-54
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• 2001

In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.24-25
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• 2000

파장변환 소자는 최근에 급격히 발전하는 광네트웍을 구축하기 위하여 필수적인 소자로서 여러 가지 형태에 대한 연구개발이 진행되고 있다. 그중에서도, 최근에는 반도체 광증폭기로 형성된 방향성 결합기구조(semiconductor optical amplifier directional coupler)에서의 상호 이득 포화(XPM : cross-phase modulation)에 의한 파장변환에 대한 개념이 제안되고 가능성이 실험적으로 입증된 바 있다. 이런 구조의 파장변환 소자는 입력 광신호의 파워가 작을때는 위상 정합이 되어 반도체 광증폭기의 광모드가 완전히 결합되어 cross state로 변환된 파장의 광파워가 많이 출력되고, 신호 입력 파워가 증가함에 따라 결합이 감소하게 되어 Cross state에서의 출력 파워는 감소하게 된다. 이와 같은 소자는 입력 신호광과 변환된 신호광이 역방향으로 진행하는 경우 광필터가 필요없이 파장변환이 가능하고, 변환 후의 소광비가 향상되기 때문에 향후 다양한 형태로 응용될 가능성이 있으며, 적정 설계 및 성능 예측을 위해서는 시영역에서 모델링할 수 있는 방법론을 구축하는 것이 필요하다. 본 논문에서는 연산자 분리 방법$^{(1)}$ 을 적용하여 상술한 파장변환기를 해석하기에 적당하도록 시영역 동적 모델을 구현하고, 파장변환 특성을 여러 가지 면에서 분석하여 보았다. (중략)

• Journal of Advanced Navigation Technology
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• v.13 no.1
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• pp.48-53
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• 2009

The CMOS RF front-end for Global Positioning System(GPS)are implemented in 1P8M CMOS $0.13{\mu}m$ process. The LNAs consist of LNA1 with high gain and low NF, and LNA2 with low gain and high IIP3 for supporting operation with active and passive antenna. the measured performances of both LNAs are 16.4/13.8 dB gain, 1.4/1.68 dB NF, and -8/-4.4 dBm IIP3 with 3.2/2 mA form 1.2 V supply, respectively. The quadrature downconversion mixer is followed by transimpedance amplifier with gain controllability from 27.5 to 41 dB. The front-end performances in LNA1 mode are 39.8 dB conversion gain, 2.2 dB NF, and -33.4 dBm IIP3 with 6.6 mW power consumption.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.45-49
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• 2009

In this paper, a direct down conversion LNA/Mixer has been designed and tested for 900Mhz UHF RFID application. The designed circuit has been implemented in 0.18um CMOS technology with 3.3V operation. In this work, a common gate input architecture has been used to cope with the higher input self jamming level. This LNA/Mixer is designed to support two operating modes of high gain mode and low gain mode according to the input jamming levels. The measured results show that the input referred P1dBs are 4dBm of high gain mode and 11dBm of low gain mode, and the conversion gains are 12dB and 3dB in high and low gain mode respectively The power consumptions are 60mW for high gain mode and 79mW for low gain mode. The noise figures are 16dB and 20dB in high gain mode and low gain mode respectively.