• Title/Summary/Keyword: 백금 박막

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Fabrication of a Schottky Type Ultraviolet Photodetector Using GaN Layer (GaN를 이용한 Schottky diode형 자외선 수광소자의 제작)

  • Seong, Ik-Joong;Lee, Suk-Hun;Lee, Chae-Hyang;Lee, Yong-Hyun;Lee, Jung-Hee;Hahm, Sung-Ho
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.6
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    • pp.28-34
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    • 1999
  • We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

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Nano-scale Patterning on Diamond substrates using an FIB (FIB를 이용한 다이아몬드 기판 위의 나노급 미세 패턴의 형상 가공)

  • Song, Oh-Sung;Kim, Jong-Ryul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.6
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    • pp.1047-1055
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    • 2006
  • We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

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Synthesis of Pt-$MoO_3$ Electrode by Electrodeposition Method for Direct Methanol Fuel Cell (전기화학적 증착법에 의한 직접 메탄올 연료전지(DMFC)용 백금-삼산화몰리브테늄 전극제조)

  • Shin, Ju-Kyung;Jung, So-Mi;Baeck, Sung-Hyeon;Tak, Yong-Suk
    • Applied Chemistry for Engineering
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    • v.21 no.4
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    • pp.435-439
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    • 2010
  • Pt-$MoO_3$ electrodes were fabricated on ITO-coated glass by electrodeposition method using 20 mM hydrogen hexachloroplatinate ($H_2PtCl_6$) and 10 mM Mo-peroxo electrolyte. Deposition order was varied, and catalytic activities of synthesized electrodes were compared with that of pure Pt electrode. Scanning Electron Microscopy (SEM) was utilized to examine surface morphology. The crystallinity of synthesized films was analyzed by X-ray Diffraction (XRD), and the oxidation state of both the platinum and molybdenum were determined by X-ray Photoelectron Spectroscopy (XPS) analyses. The catalytic activity and stability for methanol oxidation were measured using cyclic voltammetry (CV) and chronoamperometry (CA) in a mixture of 0.5 M $H_2SO_4$ and 0.5 M $CH_3OH$ aqueous solution. $MoO_3$ electrodeposited on the surface of Pt showed much higher catalytic acitivity and stability than pure Pt electrode due to the good contact between Pt and $MoO_3$.

Study on Color and Oxidation Thickness for Titanium Spectacle Frames Colored by Anodization (양극산화방법으로 착색한 티타늄 안경테의 산화막 두께에 따른 색상 연구)

  • Hyun, Seung-Cheol;Jin, Moon-Seog;Kim, Yong-Geun
    • Journal of Korean Ophthalmic Optics Society
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    • v.14 no.4
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    • pp.33-37
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    • 2009
  • Purpose: To examine the coloring condition of titanium spectacle frames with various colors by using anodization method. Methods: We made an anodization coater. Platinum plate with $3{\times}3cm^2$ was used for a cathode and titanium spectacle frame specimens was mounted on an anode in an electrolyte. An electric source device were designed to supply steady state current. The color of the coated spectacle frame specimens were measured by a spectrophotometer equipped with an integrating sphere. We use CIE $L^*a^*b$ color system as chromaticity coordinates. Results: The thickness of $TiO_2$ of titanium spectacle frame specimens was varied as controlling current flow time for electrodes. The specimens with various kinds of color as a walnut, a yellow brown, a navy blue, a blue, a light blue, a mung bean, a yellowish green, a light purple, a purple, a flower pink, a bluish green, an emerald, and a green color etc. were obtained. The values of CIE $L^*a^*b^*$ for these specimens were measured and analyzed to be changed clockwise in chromaticity coordinates as the thickness of $TiO_2$ increases. Conclusions: We identified the coloring mechanism by anodization method in titanium spectacle frame specimens.

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Chromel-Alumel Thermoelectric Flow Sensor Fabricated on Dielectric(Si3N4/SiO2/Si3N4) Membrane (유전체(Si3N4/SiO2/Si3N4)멤브레인 위에 제작된 크로멜-알루멜 열전 유량센서)

  • Lee, Hyung-Ju;Kim, Jin-Sup;Kim, Yeo-Hwan;Lee, Jung-Hee;Choi, Yong-Moon;Park, Se-Il
    • Journal of Sensor Science and Technology
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    • v.12 no.3
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    • pp.103-111
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    • 2003
  • A chromel-alumel thermoelectric flow sensor using $Si_3N_4/SiO_2/Si_3N_4$ thermal isolation membrane was fabricated. Temperature coefficient of resistance of thin film Pt-heater was about $0.00397/^{\circ}C$, and Seebeck coefficient of chromel-alumel thermocouple was about $36\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and $N_2$-flow sensitivity increased as heater voltage increased or the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_2$-flow sensitivity and thermal response time of the sensor were about $1.5\;mV/sccm^{1/2}$ and 0.18 sec., respectively. Linear range in flow sensitivity of the flow sensor was wider than that of Bi-Sb flow sensor.

A Study on the first inventor defense in the US patent law (미국에서의 선발명자 항변에 관한 연구)

  • Chang, Eun-Ik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.6
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    • pp.1319-1336
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    • 2006
  • The successive round of talks oil Korea-USA Free Trade Agreement (FTA) has continued, and it also has the Intellectual property(IPR) unit. Until now, tile one of most disputing concerns in IPR unit through talks is the limitation of compulsory license of claimed invention. The US is urging to establish a safeguard for IPR, as similar measure of the US, to protecting the profit of the US enterprises through these on-going talks, it is more likely expected to take the offensive about infringement of the patent seriously. Based on the current circumstances, the provision strategy study is needed to obtain Korea inventors the first inventor defense under the US patent law system as well as understand the current Korea's patent law and its revision against that in the US. In patent Law, both nations with first to file system and first to invent system permit a prior user of an invention to continue to use the invention notwithstanding its subsequent patenting by another under being subject to certain qualifications and limitations, even though a patent by a later inventor is granted. Normally, the first inventor defense has been used to compensate the drawbacks of the first to file system. The US patent Law, however, adopting the first to invent system admits the first inventor defense. Therefore, pursuing counteract provision under consideration with Korean patent Law system and research environment along with investigating the reason why the US adopted its patent law system, the scope of right, and the new reform of Act. 2005 of the institute, which promotes the first Korean inventor to possess the defense right of the US, provides certain preparations for Korean companies against the expected offensive from the US ones under the US patent Law system.

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