• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.125-126
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.82-82
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• 2000

• Polymer Science and Technology
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• v.21 no.1
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• pp.24-32
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• 2010

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.88-88
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• 2003

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.6
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• pp.55-66
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• 2016

Power gating is one of effective techniques for reducing leakage current in semiconductor chip. However, power gating cell (PGC) which is used to switch the power source causes performance degradation and the associated reliability problem by increasing IR drop. However, the newly raised problem caused by different scaling properties between gates and metal wires demands additional considerations in power gating design. In this paper, we propose a robust cell placement based power gating design method for reducing the area for power gating cell and metal routing thus to meet IR drop requirement. Experimental results by applying the proposed techniques on the application processor for smartphone fabricated in 28nm CMOS process show that power gating cell area is reduced by 16.16% and maximum IR drop value is also decreased by 8.49% compared to existing power gating cell placement techniques.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2005.10a
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• pp.283-288
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• 2005

Application of semiconductor sensors has widely spreaded into various industries because those have several merits like easy miniaturization and batch production comparison with previous mechanical sensors. But external conditions such as thermal and repetitive load have a bad effect on sensors's lifetime. Especially, this paper was focused on fatigue life of a interconnect made by various materials. Firstly we implemented the stress analysis for interconnect under thermal load and wording pressure. And the fatigue lifetime of each material was induced by Manson & Coffin Equation using the plastic stress-strain curve obtained by the plastic-elastic Finite Element Analysis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.558-559
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• 2018

The harness wiring serves as an intermediary for transmitting the electrical signals necessary to drive the vehicle and is highly influenced by vehicle performance. Wire harness tester performs assembly test. Harness products are operated with the function of checking 0 and 1. Proceed to inspection in wire assembly process. There is a defect in the finished vehicle during use. We want to improve such defects. We design the FPGA and propose the measurement device design and the simulation result that the line and the line are disconnected by ADC precision harness inspection.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.27.2-27.2
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• 2011

본 연구에서는 저저항/고투과 플렉시블 투명 전극 개발을 위해 금속 그리드가 적용된 투명 전극을 개발하였다. Lift off 공정을 도입하여 플렉시블 PET 기판 위에 Ag grid를 성막하고 이후 연속 공정이 가능한 Roll-to-Roll sputtering system을 이용하여 최적화된 ITO(40nm)/Ag(12nm)/ITO(40nm) 다층 투명 전극을 성막하였다. 제작된 플렉시블 투명 전극의 전기적, 광학적, 구조적 특성 및 기계적/전기적 안정성 평가를 위해 four-point probe measurement, Hall effect measurement, UV/Vis spectrometer, scanning electron microscopy 및 bending tester를 이용하여 각각의 특성을 분석하였다. Ag grid가 적용된 ITO/Ag/ITO 투명 전극에서 Ag의 배선 간격이 0.75 mm일 때 0.18 ohm/sq. 의 낮은 면 저항과 가시광선 영역에서 80% 이상의 높은 투과율을 나타내었으며, 이러한 저저항 및 고투과율 특성으로 인해 최적화된 배선 간격 0.75 mm에서 $538.11{\times}10^{-3}\;ohm^{-1}$의 매우 높은 figure of merit ($T^{10}/R_{sh}$) 값을 확보할 수 있었다. 기계적 응력에 따른 전기적 안정성 특성 분석 결과 5,000회 이상의 bending cycle 에서도 초기 저항 값과 유사한 전기적 특성을 나타냄으로써 Ag grid가 적용된 ITO/Ag/ITO 플렉시블 투명 전극의 기계적 응력에 따른 전기적 안정성을 확인할 수 있었다. Ag grid가 적용된 ITO/Ag/ITO 투명 전극의 투명 안테나 적용 가능성을 타진하기 위해 low band 및 high band 영역에서의 안테나 효율을 측정하였으며, 모든 영역에서 상용화된 copper 안테나와 유사한 효율을 나타내었다. Ag grid를 이용한 플렉시블 투명 전극의 저저항/고투과율 특성은 플렉시블 광전소자의 투명 안테나로의 적용 가능성을 나타낸다.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.403-410
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• 2001

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.413-413
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• 2008

최근 잉크젯, 스크린, 그라비아 등 기존의 인쇄 방식과 인쇄 기술을 이용하여 저가의 전자회로 혹은 전자 소자를 제조하고자 프린팅 소재 및 공정 개발에 대한 산업계의 관심이 증가하고 있다. 특히 PCB, RFID, 디스플레이, 태양전지 분야의 전극재료의 개발에 많은 연구가 진행 중에 있으며, 다양한 인쇄 방법 중 미세회로의 구현이 가능한 잉크젯 프린팅을 통한 전극 형성방법에 주목하고 있다. 본 연구는 잉크젯 프린팅 방식을 통해 배선을 형성하고자 이에 적합한 다양한 농도의 잉크를 배합하여 평가하였으며, 첨가제 및 소결, 건조 조건의 변화를 통해 기재와의 부착력, 배선의 크랙을 조절하였다.