• Title/Summary/Keyword: 발진기

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High-power Yb Fiber Laser with 3.0-kW Output (3.0 kW 고출력 발진 단일 모드 Yb 광섬유 레이저)

  • Park, Jong Seon;Park, Eun Ji;Oh, Ye Jin;Jeong, Hoon;Kim, Ji Won;Jung, Yeji;Lee, Kangin;Lee, Yongsoo;Cho, Joonyong
    • Korean Journal of Optics and Photonics
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    • v.32 no.4
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    • pp.147-152
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    • 2021
  • We report high-power continuous-wave operation of a Yb-doped fiber laser at 1070 nm, pumped by high-power laser diodes at 976 nm. Based on theoretical calculation of the stimulated Raman scattering and temperature distribution in the fiber, we construct a bidirectionally pumped Yb-fiberlaser system incorporating a pair of fiber Bragg gratings and a cladding light stripper. The fiber laser yields 3.0 kW of continuous-wave output at 1070 nm in a diffraction-limited beam with M2 ≈ 1.26 for 4.1 kW of incident pump power, corresponding to a slope efficiency of 81.5%. The prospects for further power scaling are discussed.

A Design of CMOS 5GHz VCO using Series Varactor and Parallel Capacitor Banks for Small Kvco Gain (작은 Kvco 게인를 위한 직렬 바랙터와 병렬 캐패시터 뱅크를 이용한 CMOS 5GHz VCO 설계)

  • Mi-Young Lee
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.24 no.2
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    • pp.139-145
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    • 2024
  • This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (Kvco) variation. To compensate conventional large Kvco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the Kvco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

Frequency Doubling in LiIO3 Crystals by the Ring Enhancement Cavity (고리형 증폭 공진기에 의한 LiIO3결정에서 제2조화파 발생)

  • Kim, Sang-Gee
    • Journal of Korean Ophthalmic Optics Society
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    • v.4 no.2
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    • pp.45-49
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    • 1999
  • The second harmonic, wavelength is 397nm, of the continuous wave diode laser, whose maximum power is 35mW, was generated in $LiIO_3$ crystals in a ring enhancement cavity. 5mm- and 10mm-long crystals cut $43.21^{\circ}$ for optic axis were used in this experiment. Both surfaces of those were anti-reflection coated for 794nm. In case the crystal was inserted into the cavity, the condition of separation between two concave mirrors for the optimum mode matching was found. The conversion efficiency of second harmonic generation was increased by the resonant enhancement of pumping power in the ring enhancement cavity, and the frequency of diode laser was locked to that of the counter-propagation mode generated from the surface of crystal. When the pumping power was 28 mW, the infrared buildup factor was about 45 without the crystal, and 14 with the crystal due to the transmission loss of crystal. The maximum second harmonic powers of $1.5{\mu}W$ and $6.6{\mu}W$ were obtained, and corresponding conversion efficiencies were $(6.584{\pm}0.56){\times}10^{-3}$%, $2.6{\pm}0.21){\times}10%{-2}$% in 5mm- and 10mm-long $LiIO_3$, respectively.

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Design of Low-Area DC-DC Converter for 1.5V 256kb eFlash Memory IPs (1.5V 256kb eFlash 메모리 IP용 저면적 DC-DC Converter 설계)

  • Kim, YoungHee;Jin, HongZhou;Ha, PanBong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.15 no.2
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    • pp.144-151
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    • 2022
  • In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN voltage in the unit charge pump circuit for the design of a low-area DC-DC converter. A 5V cross-coupled PMOS transistor is used as a transistor that transfers the boosted voltage to the VOUT node. In addition, the gate node of the 5V NMOS precharging transistor is made to swing between VIN voltage and VIN+VDD voltage using a boost-clock generator. Furthermore, to swing the clock signal, which is one node of the pumping capacitor, to full VDD during a small ring oscillation period in the multi-stage charge pump circuit, a local inverter is added to each unit charge pump circuit. And when exiting from erase mode and program mode and staying at stand-by state, HV NMOS transistor is used to precharge to VDD voltage instead of using a circuit that precharges the boosted voltage to VDD voltage. Since the proposed circuit is applied to the DC-DC converter circuit, the layout area of the 256kb eFLASH memory IP is reduced by about 6.5% compared to the case of using the conventional DC-DC converter circuit.

The design of the high efficiency DC-DC Converter with Dynamic Threshold MOS switch (Dynamic Threshold MOS 스위치를 사용한 고효율 DC-DC Converter 설계)

  • Ha, Ka-San;Koo, Yong-Seo;Son, Jung-Man;Kwon, Jong-Ki;Jung, Jun-Mo
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.176-183
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    • 2008
  • The high efficiency power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 95% at 100mA output current. And DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

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A Design of Power Management IC for CCD Image Sensor (CCD 이미지 센서용 Power Management IC 설계)

  • Koo, Yong-Seo;Lee, Kang-Yoon;Ha, Jae-Hwan;Yang, Yil-Suk
    • Journal of IKEEE
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    • v.13 no.4
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    • pp.63-68
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    • 2009
  • The power management integrated circuit(PMIC) for CCD image sensor is presented in this study. A CCD image sensor is very sensitive against temperature. The temperature, that is heat, is generally generated by the PMIC with low efficiency. Since the generated heat influences performance of CCD image sensor, it should be minimized by using a PMIC which has a high efficiency. In order to develop the PMIC with high efficiency, the input stage is designed with synchronous type step down DC-DC converter. The operating range of the converter is from 5V to 15V and the converter is controlled using PWM method. The PWM control circuit consists of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit. The saw-tooth generator is designed with 1.2MHz oscillation frequency. The comparator is designed with the two stages OP Amp. And the error amplifier has 40dB DC gain and $77^{\circ}$ phase margin. The output of the step down converter is connected to input stage of the charge pump. The output of the charge pump is connected to input of the LDO which is the output stage of the PMIC. Finally, the PMIC, based on the PWM control circuit and the charge pump and the LDO, has output voltage of 15V, -7.5V, 3.3V and 5V. The PMIC is designed with a 0.35um process.

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A study on the characteristic of Pockel cell Q-switch for Nd:YAG laser (Nd:YAG Laser를 위한 포켓셀 Q-스위치특성 연구)

  • Kim, Whi-Young
    • Journal of Digital Contents Society
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    • v.10 no.2
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    • pp.199-207
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    • 2009
  • The Q-switching the shutter or the different optical science element puts in within the laser light resonator and the storehouse departs from the within the resonator it loses the mortar and the reversal distribution which when is sufficient creates from within the active medium, opens the shutter instantaneously and it is to do to be made to emit with the light where the energy which is accumulated within the resonator is strong very. Like this Q-switching of laser resonator--It decreases factor increasing suddenly to make. To method of Laser Q-switching mechanical switching methods, electro-optic switching methods and switching by saturable absorber methods, acousto-optic switching method etc. 4 kind are being used on a large scale. In these people the conversion which is electric in compliance with the effect which is electrooptics is widely being used the Q-switching pulse of short pulse width because being it will be able to create. Consequently, Pockel cell where it has the quality of electrooptics effect) the Q-it is become known that it is suitable it uses with switch. From the research which it sees FET and one-chip microprocessor where it is a switching element and pulse transfomer to plan and produce pockel cell Q-switch driving gears, pulse style Nd: It applied in YAG Laser system and it investigated and researched the operating characteristic of the Q-switch. Also, the Q-switch leads and Nd where it is output: YAG with forecast in compliance with a theoretical calculation it comes to buy laser beam side politics it compared and laser beam qualities which had become Q-switching it analyzed.

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The Study on the Embedded Active Device for Ka-Band using the Component Embedding Process (부품 내장 공정을 이용한 5G용 내장형 능동소자에 관한 연구)

  • Jung, Jae-Woong;Park, Se-Hoon;Ryu, Jong-In
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.3
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    • pp.1-7
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    • 2021
  • In this paper, by embedding a bare-die chip-type drive amplifier into the PCB composed of ABF and FR-4, it implements an embedded active device that can be applied in 28 GHz band modules. The ABF has a dielectric constant of 3.2 and a dielectric loss of 0.016. The FR-4 where the drive amplifier is embedded has a dielectric constant of 3.5 and a dielectric loss of 0.02. The proposed embedded module is processed into two structures, and S-parameter properties are confirmed with measurements. The two process structures are an embedding structure of face-up and an embedding structure of face-down. The fabricated module is measured on a designed test board using Taconic's TLY-5A(dielectric constant : 2.17, dielectric loss : 0.0002). The PCB which embedded into the face-down expected better gain performance due to shorter interconnection-line from the RF pad of the Bear-die chip to the pattern of formed layer. But it is verified that the ground at the bottom of the bear-die chip is grounded Through via, resulting in an oscillation. On the other hand, the face-up structure has a stable gain characteristic of more than 10 dB from 25 GHz to 30 GHz, with a gain of 12.32 dB at the center frequency of 28 GHz. The output characteristics of module embedded into the face-up structure are measured using signal generator and spectrum analyzer. When the input power (Pin) of the signal generator was applied from -10 dBm to 20 dBm, the gain compression point (P1dB) of the embedded module was 20.38 dB. Ultimately, the bare-die chip used in this paper was verified through measurement that the oscillation is improved according to the grounding methods when embedding in a PCB. Thus, the module embedded into the face-up structure will be able to be properly used for communication modules in millimeter wave bands.

A Clinical Study of Tsutsugamushi Fever in Children during 1997~2000 in the Western Kyungnam Province (최근 4년간 서부 경남지역의 소아에서 발생한 쯔쯔가무시열의 임상적 고찰)

  • Ju, Hye Young;Lee, Jun Su;Kim, Jeong Hee;Yoo, Hwang Jae;Kim, Chun Soo
    • Pediatric Infection and Vaccine
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    • v.8 no.2
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    • pp.213-221
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    • 2001
  • Propose : Tsutsugamushi fever is a acute febrile disease, which is caused by O. tsutsugamushi. Recently, this disease is increasingly reported in children. This study was undertaken to investigate clinical features of tsutsugamushi fever in children. Methods : This study involved 17 children with tsutsugamushi fever who were admitted to Masan Samsung hospital between September 1997 and December 2000. We investigated the age, sex ratio, clinical manifestations, laboratory findings, response of therapy and prognosis. Results : The age of patients was $6.9{\pm}3.6$ years, ranging from 6 months to 12 years and male predilection(58.8%) was noted and all cases of patients occured in October or November. The most common symptoms were fever in all cases and headache in 8(47.1%). The most common signs were skin rash in all cases, eschar in 14(82.4%) and lymphadenopathy 8(47.1%). Locations of the eschars were back and inguinal area in each 3 cases, neck and chest in each 2, popliteal area in 2, scalp and thigh in each 1. Laboratory findings included anemia in 1 case, leukopenia and thrombocytopenia in each 5, hematuria and proteinuria in each 1, ESR elevation in 2 and positive CRP in 12, AST elevation in 9 and ALT elevation in 7. Serologic diagnosis was made by passive hemagglutination assay(PHA) in 8 cases(47%) on admission, 4 cases in initial negative group were performed follow-up test at 2nd or 3rd weeks of illness and then all cases of 4 were converted to positive reaction. Clinical improvement was noticed in all cases after treatment to chloramhenicol or doxycycline. Mean duration for defervescence after treatment was $1.4{\pm}0.8$ days. Complications were interstitial pneumonia in 1 case and aseptic meningitis in 3, but all cases of patients were recovered without sequelae or recurrence. Conclusions : Tsutsugamushi fever in children was similiar to adult in the clinical features except male predilection. Early diagnosis and empirical treatment based on clinical manifestations such as fever, skin rash, eschar, lymphadenopathy is important and serologic diagnosis need to perform follow-up test at 2nd or 3rd weeks of illness.

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Clinical fetures of kawasaki disease in school-aged children (학동기 아동에서의 가와사끼병의 임상 특징)

  • Park, Eun Young;Kim, Ji Hye;Kim, Hae Soon;Shon, Sejung
    • Clinical and Experimental Pediatrics
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    • v.50 no.3
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    • pp.292-297
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    • 2007
  • Purpose : Kawasaki disease (KD) rarely occurs in school-aged children. We clarified the characteristics of KD in this age group to provide tips for a high index of suspicion. Methods : Features of 38 patients with KD who were 7 years of age or older were retrospectively reviewed. Results : The incidence of the KD patients ${\geq}7years$ was 4.9 percent. The ratio of male to female was 2.5:1. Of the 38 patients, nine patients (24.0 percent) were diagnosed with typical KD and 29 patients (76.0 percent) with incomplete KD. In incomplete KD patients, cervical lymphadenopathy (69.0 percent) occurred most frequently, followed by conjunctival injection (62.0 percent) and polymorphous rash (45.0 percent). These patients occasionally presented with other additional symptoms including abdominal pain, headache, vomiting and arthralgia. Incomplete KD was initially diagnosed as cervical lymphadenitis (34.0 percent), viral infection (14.0 percent), scarlet fever (7.0 percent), meningitis (7.0 percent), and Kikuchi disease (7.0 percent). Coronary complications were noted in 15 patients (39.0 percent). Of the 37 patients treated with intravenous immunoglobulin, five (14.0 percent) were resistant to the therapy and all had coronary abnormalities. Conclusion : Most patients with KD ${\geq}7years$ of age have incomplete presentations. They tend to have a higher incidence of initial presentations of unilateral neck mass and coronary artery involvement. In school-aged children, fever and cervical lymphadenitis or suspected neck infection unresponsive to intravenous antibiotics should signal the possibility of KD. A high index of suspicion and prompt treatment is essential in this age group of patients.