• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.21-22
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• 2013

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.122-123
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• 2012

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.163-167
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• 2008

The electronic structure and magnetism of superlattice systems consisted of Heusler compound $Co_2MnSi$ (CMS) and zinc-blende MnAs (MA) are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. Four superlattice systems are considered, that is CMS(m)/MA(n), where m and n, being either 2 or 4, denote the number of alternatingly arrayed layers of the compounds in a superlattice along [001] direction. From the calculated total magnetic moments as well as the total density of states, it is found that neither of the four systems is half-metallic. It is also found that the Mn atoms are antiferromagnetically coupled in the systems of CMS2/MA2 and CMS2/MA4. The total and atom-resolved density of states of the four superlattices are compared with those of the bulk $Co_2MnSi$ and MnAs, and the influences of the change in the systems symmetry on the magnetism and half-metallicity are discussed.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.157-161
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• 2012

Magnetism at the interfaces of rocksalt structured half-metals, NaN and CaN were investigated by use of the first-principles band calculations. The electronic structures for the simple interface and mixed interface systems were calculated by the FLAPW (full-potential linearized augmented plane wave) method. From the calculated number of electrons in muffin-tin spheres of each atom, we found, for the simple interface system, that the magnetic moment of the N atom in the CaN (NaN) side is increased (decreased) compared to those of inner N atoms. For the mixed interface system, the magnetic moments of the interface N atoms are similar to the averaged value for the inner N atoms in CaN and NaN side. Among four interface N atoms, the N atom connected to Na atoms in the upper and down layers has the largest magnetic moment and that connected to Ca atoms has the smallest. The number of p electrons in each N atom and the calculated density of states explain well the above situation.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.185-189
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• 2016

By employing photoemission spectroscopy (PES) and soft X-ray absorption spectroscopy (XAS), the electronic structure of the candidate half-metallic antiferromagnet of $Mn_3Ga$ Heusler compound has been investigated. We have studied two ball-milled $Mn_3Ga$ powder samples, one after annealing and the other without annealing, respectively. Based on the Mn 2p XAS study, we have found that Mn ions are nearly divalent in $Mn_3Ga$ and that the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry are both present in $Mn_3Ga$. We have found relatively good agreement between the measured valence-band PES spectrum of $Mn_3Ga$ and the calculated density of states, which is in agreement with the half-metallic electronic structure of $Mn_3Ga$.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.147-151
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• 2007

We have investigated the half-metallicity and magnetism for the Heusler ferromagnet $Co_2$ZrSi interfaced with semiconductor ZnTe along the (001) plane by using the full-potential linearized augmented plane wave (FLAPW) method. We considered low types of possible interfaces: ZrSi/Zn, ZrSi/Te, Co/Zn, and Co/Te, respectively. From the calculated density of states, it was found that the half-metallicity was lost at all the interfaces, however for the Co/Te system the value of minority spin density of states was close to zero at the Fermi level. These facts are due to the interface states, appeared in the minority spin gap in bulk $Co_2$ZrSi, caused by the changes of the coordination and symmetry and the hybridizations between the interface atoms. At the Co/Te interface, the magnetic moments of Co atoms are 0.68 and $0.78{\mu}_B$ for the "bridge" and "antibridge" sites, respectively, which are much reduced with respect to that ($1.15{\mu}_B$) of the bulk $Co_2$ZrSi. In the case of Co/Zn, Co atoms at the "bridge" and "antibridge" sites have magnetic moments of 1.16 and $0.93{\mu}_B$, respectively, which are almost same or slightly decreased compared to that of the bulk $Co_2$ZrSi. On the other hand, for the ZrSi/Zn and ZrSi/Te systems, the magnetic moments of Co atoms at the sub-interface layers are in the range of $1.13{\sim}1.30\;{\mu}_B$, which are almost same or slightly increased than that of the bulk $Co_2$ZrSi.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.201-205
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• 2008

In order to investigate the origin of the band gap in the half-metallic Heusler alloy, $Co_2MnSi$, through the electronic structure calculation, we have calculated the electronic structures for the compounds consisted of parts of Heusler structures, i.e. zinc-blende CoMn, half-Heusler CoMnSi, and artificial $Co_2Mn$, using the full-potential first-principles band calculation method. By investigating the band hybridization and energy gap for the calculated density of states for these compounds, we found that the the origin of the band gap is not consistent with the explanation discussed by Galanakis et al. We have also discussed the magnetism for these compounds by the calculated number of majority- and minority-spin electrons.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.108-115
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• 1990

This paper describes the design and fabrication of a processing element that will be used as a component in the construction of a two dimensional systolic for FFT. The chip performs data shuffling and radix-2 decimation-in-time (DIT) butterfly arithmetic. It consists of a data routing unit, internal control logic and HBA unit which computes butterfly arithmetic. The 6.5K transistors processing element designed with standard cells has been fabricated with a 2u'm double metal CMOS process, and evaluated by wafer probing measurements. The measured characteristics show that a HBA can be computed in 0.5 usec with a 20MHz clok, and it is estimated that the FFT of length 1024 can be transformed in 11.2 usec.

• Journal of the Korean Chemical Society
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• v.56 no.6
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• pp.731-738
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• 2012

The purpose of this study is to analyze the understandings of science high school students on the conception of chemical cell in relation to chemical equilibrium from the microscopic viewpoint at molecular level through questionnaires and follow-up interviews. The results show that they have high understandings on the chemical equilibrium states in the electrochemical cell and on the redox reaction taking place simultaneously when a metal electrode is immersed in the metal ion solution. However, they do not fully comprehend the development of electrical potential difference, electron movement, electrode potential measurement in the half-cells, and calculation of the net cell voltage between anode and cathode in the chemical cell because of difficulties in the microscopic understanding the interaction on the interface at the electrode and the electrolyte solution.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.239-244
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• 2011

In this study, $Fe_3O_4$/graphene and CuO/graphene composites were synthesized by the polyol reduction method using ethylene glycol, and their performances as the anodes of lithium ion batteries were evaluated. The physical characteristics of the synthesized composites were analyzed by SEM, XRD, and TGA. In addition, their electrochemical properties were examined by the electrochemical analysis techniques such as charge/discharge performance, cyclic voltammetry, and AC impedance spectroscopy. The cells composed of $Fe_3O_4$/graphene and CuO/graphene composites showed better performance than the graphene electrode, due to the dispersion of nanosized $Fe_3O_4$ or CuO on the surface of graphene and the formation of good electrical network in the electrode. Their composites kept the reversible capacity more than 600 mAh/g even after the charging/discharging of 30 cycles.