• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.1
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• pp.152-164
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• 2015

A rapid development of semiconductors, sensors and mobile network technologies has enable that the embedded device includes high sensitivity sensors, wireless communication modules and a video processing module for vehicular environment, and many researchers have been actively studying the smart car technology combined on the high performance embedded devices. The vehicle is increased as the development of society, and the risk of accidents is increasing gradually. Thus, the advanced driver assistance system providing the vehicular status and the surrounding environment of the vehicle to the driver using various sensor data is actively studied. In this paper, we design and implement the smart vehicular camera device providing the V2X communication and gathering environment information. And we studied the method to create the metadata from a received video data and sensor data using video analysis algorithm. In addition, we invent S-ROI, D-ROI methods that set a region of interest in a video frame to improve calculation performance. We performed the performance evaluation for two ROI methods. As the result, we confirmed the video processing speed that S-ROI is 3.0 times and D-ROI is 4.8 times better than a full frame analysis.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• The Journal of the Korea Contents Association
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• v.21 no.2
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• pp.85-99
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• 2021

Graphene, called the "dream material" is drawing attention as a groundbreaking new material that will lead the era of the 4th Industrial Revolution. Graphene has high strength, excellent electrical and thermal conductivity, excellent optical permeability, and excellent gas barrier properties. In this paper, as the South Korean government recently announced Green New Deal and Digital New Deal policy, we analyze graphene technology, which is also attracting attention for its application to Corona 19 biosensor, to understand its national R&D trend and knowledge structure, and to explore the possibility of its application. Firstly, 4,054 cases of national R&D project information for the last 10 years are collected from the National Science & Technology Information Service(NTIS) to analyze the trend of graphene-related R&D. Besides, projects classified as green technology are analyzed concerning the government's Green New Deal policy. Secondly, text mining analysis is conducted by collecting 500 recent graphene-related articles from e-newspapers. According to the analysis, the field with the largest number of projects was found to be high-efficiency secondary battery technology, and the proportion of total research funds was also the highest. It is expected that South Korea will lead the development of graphene technology in the future to become a world leader in diverse industries including electric vehicles, cellular phone batteries, next-generation semiconductors, 5G, and biosensors.

• JOURNAL OF ELECTRICAL WORLD
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• s.286
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• pp.64-69
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• 2000

20세기에 있어서의 비약하는 산업계의 주축으로서 철강시장은 급속히 확대되었고 그와 더불어 신기술의 개발과 도입에서도 선도적 역할을 다하여 왔다. 특히 이 4반세기는 반도체기술의 진보와 함께 컴퓨터, 플랜트 컨트롤러, 드라이브 시스템 등 전기제품은 비약적인 진화를 이루어 왔다. 현재는 중국$\cdot$아시아$\cdot$남미를 중심으로 철강제품의 수요가 증가하여 설비투자도 확대되고 있다. 그러나 북미$\cdot$유럽$\cdot$일본에서는 생산능력과 수요와의 사이에 수급공백이 있어 이전과 같은 시장만큼의 신장은 기대할 수 없는 실정이다. 이와 같은 상황하에서 철강유저의 투자목적을 합리화$\cdot$성력화$\cdot$제품품질의 향상에 두고 있어, 미쓰비시전기는 ''경쟁력 있는 제품을 만들기와 총투자코스트의 최소화''를 서포트하는 제철플랜트용 전기제품의 제공을 지향하여, 그림에 표시하는 것과 같은 4개의 어프로치로 이에 대응하고 있다. 고품질화와 자동화에 대하여는 종래의 품질제어를 능가하는 초안정화 시스템의 적용, 프로세스의 이상 검지와 자동복구에 의한 완전 노터치 오퍼레이션의 실현, 인텔리전트 센서에 의한 프로세스의 가시화로 오퍼레이터가 최종판단을 용이하고 정확하게 할 수 있는 환경을 제공한다. 고효율화$\cdot$에너지 사용합리화에 대하여는 고역률 전원을 추구하여 고효율 드라이브장치와 모터를 제공한다. 글로벌 스탠더드화에의 대응으로서는 네트워크의 오픈화에 의한 멀티벤더 환경, 범용 하드웨어에 의한 오픈 HMI(Human Machine Interface)을 제공하고 있다. 플랜트의 신속한 가동과 리모트 메인터넌스 환경을 실현하기 위하여 플랜트 시뮬레이션 시험의 실시로 공장출하 품질의 향상을 도모한다. 또한 연구센터로부터의 원격감시와 트러블해석 서포트를 쉽게 할 수가 있다. 나아가 최근에는 급격한 기세로 신장되어 온 멀티미디어 기술, 인터넷 기술, 인트라넷 기술, 모바일단말, 화상압축기술 등에 의하여 원격집중감시, 현장과 중앙 쌍방향 협조보수작업, 버추얼 리얼리티 응용시스템이 현실화 되고있는 실정이다. 이들 IT(Information Technology)솔류션은 금후의 제철플랜트의 시스템을 크게 바꾸어 나가는 것은 물론 사업 경쟁력 강화의 키 테크놀로지가 될 것이다. 앞으로 미쓰비시전기는 제철플랜트에 대하여 유저니즈를 IT 솔루션으로 전개, 제공해 나가고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.352.1-352.1
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• 2016

양자점은 나노미터 크기의 반도체 결정으로 밴드갭에 따라 광학적, 전기적 성질이 달라지는 독특한 성질을 가지는 형광물질으로 활발히 연구되고 있다. 중금속을 기반으로 한 양자점은 높은 발광효율과 광안전성을 가지며, 가시광선 영역에서 빛을 내는 특징을 가지고 있다. 그러나 중금속을 사용하기 때문에 독성이 있어 인체나 환경에 유해하여 응용 연구에 제한적이다. 반면에, 탄소 기반의 양자점은 중금속 기반의 양자점과 비슷한 성질을 가질 뿐만 아니라, 높은 용해도와 낮은 독성으로 인해 생체적합성이 높다는 장점이 있다. 이를 이용하여 발광다이오드(LEDs), 태양전지, 광촉매 뿐만 아니라 바이오이미징, 바이오센서 등 생물학분야에도 응용 될 수 있다. 본 연구에서는 Bottom-up 합성 방법으로 유기전구체를 이용하여 질소를 함유하고 있는 양친매성 탄소 양자점(N-GQDs)을 합성하였다. 합성에 사용한 유기전구체는 기존에 보고된 유기전구체와 다르게 반응 진행 중에도 pH 측정 결과 중성을 나타내며, 반응 온도($225^{\circ}C$)와 유사한 온도에서도 pH 값은 여전히 6.0 이상의 값을 나타냈다. 중성을 띄는 특징으로 인해 추가적인 산제거 과정이나 표면안정화 과정이 필요 없다는 장점을 가지고 있다. 합성된 N-GQDs는 높은 결정성의 원형구조를 가지며, 원자힘현미경(AFM) 분석을 통해 높이가 ~ 1.5 nm 미만으로 3층 이하의 두께로 형성되었음을 확인하였다. 또한, 적외선 분광법(FT-IR) 분석을 통해 O-H기, 방향족 고리의 C = C (또는 C = N)기 및 C-N기가 각각 ~3250, ~1670과 ~1140 cm-1에서 확인할 수 있다. 합성된 양자점을 유기태양전지의 active layer에 소량(2 wt%) 첨가하여 양자점의 광학적, 전기적 성질을 확인하였다. 비교군 유기태양전지보다 N-GQDs가 첨가된 유기태양전지의 외부양자효율(PCE)이 7.3%에서 8.4%로 약 20%가 증가하는 것을 보였다. 이는 양자점이 상대적으로 흡수가 약한 단파장 영역의 빛을 흡수하고 PL을 내어 active layer로 에너지 트랜스퍼 현상이 일어나 전자전달을 원활하게 해 주기 때문이다. 앞으로 본 연구의 가능성과 추가적인 연구를 통해 더 많은 분야에 응용되기를 기대한다.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.223-227
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• 2010

Recently, one-dimensional semiconducting nanomaterials have attracted considerable interest for their potential as building blocks for fabricating various nanodevices. Among these semiconducting nanomaterials,, $SnO_2$ nanostructures including nanowires, nanorods, nanobelts, and nanotubes were successfully synthesized and their electrochemical properties were evaluated. Although $SnO_2$ nanowires and nanobelts exhibit fascinating gas sensing characteristics, there are still significant difficulties in using them for device applications. The crucial problem is the alignment of the nanowires. Each nanowire should be attached on each die using arduous e-beam or photolithography, which is quite an undesirable process in terms of mass production in the current semiconductor industry. In this study, a simple process for making sensitive $SnO_2$ nanowire-based gas sensors by using a standard semiconducting fabrication process was studied. The nanowires were aligned in-situ during nanowire synthesis by thermal CVD process and a nanowire network structure between the electrodes was obtained. The $SnO_2$ nanowire network was floated upon the Si substrate by separating an Au catalyst between the electrodes. As the electric current is transported along the networks of the nanowires, not along the surface layer on the substrate, the gas sensitivities could be maximized in this networked and floated structure. By varying the nanowire density and the distance between the electrodes, several types of nanowire network were fabricated. The $NO_2$ gas sensitivity was 30~200 when the $NO_2$ concentration was 5~20ppm. The response time was ca. 30~110 sec.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.263-272
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• 2013

Printed electronics creates electrically functional devices by printing on variety of substrates. Printing typically uses common printing equipment or other low-cost equipment suitable for defining patterns on material, such as screen printing, flexography, gravure, offset lithography and inkjet. Compared to conventional manufacturing of microelectronics, printed electronics is characterized by simpler and more cost-effective fabrication of high and low volume products. Now there is huge effort towards printing many other more functional components, from displays to transistors to photovoltaic cells, using the full range of printing technologies - from inkjet to roll to roll analogue print techniques. The market for printed electronics will rise from $1.99 billion in 2010 to $55.10 billion in 2020. In 2030, this industry could be $300 billion - larger than the silicon semiconductor industry - from lighting to displays[8].

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.2
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• pp.119-124
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• 2015

Numerical study on the new design of the liquid mass flow meter in infinitesimal flow rate for semiconductor production is performed. The heater and thermistor are wired on the circular tube about 0.3mm inner diameter with designed gap between them. After the time interval from the single pulse heating the thermistor reaches its peak temperature and this time interval is almost inversely proportional to the liquid mass flow rate. The axial conduction in tube wall and convection through the flow is combined. As a result, the peak temperature moving velocity is much smaller than flow mean velocity and there is no linear relationship between them. In this study, the effects of design parameters such as the tube inner/outer diameter, wired heater width, and the gap between heater and thermistor are investigated and the trends of optimization in these parameters are discussed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.2
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• pp.213-220
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• 2016

This research aims to develop core technologies for passive carrier (no power in carrier itself) transfer system. The technologies are passive levitation, propulsion, and guidance, which can be great benefits for semiconductor and display manufacturing industries. Passive maglev carrier is necessary to precise position control for quiet and stable transfer operation. However, the structural characteristics of carrier and the installation errors of gap sensors cause the pitch motion. Hence, the controller design in consideration of pitch motion is required. This study deals with the reduction control of carrier pitch motion. PDA controller and PDA controller with pitch control are proposed to compare the pitch angle analysis. The pitch angle and the levitation precision are measured by experiment. Finally, the optimized design of pitch controller is presented and the effects are discussed.