• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.1
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• pp.19-25
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• 2013

In this study, the mechanical properties of a Ti thin film are measured by a bulge test. In the bulge test, uniform pressure is applied to one side of the film. Measurement of the membrane deflection as a function of the applied pressure allows one to determine the mechanical properties of the film. Ti thin films with thicknesses of 1.0, 1.5, and $2.0{\mu}m$ were deposited on a Si wafer by using an RF magnetron sputtering system. These specimens were annealed at $600^{\circ}C$ for 150, 300, and 600 s to investigate the effect of temperature on the yield stress and mechanical properties of the Ti films. The elastic modulus, residual stress, and yield stress of these membranes are measured by a bulge test. The experimental results suggest that the yield stress is sensitive to the film thickness and annealing time.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.7
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• pp.1270-1279
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• 2002

Residual stress is a dominant obstacle to efficient production and safe usage of device by deteriorating the mechanical strength and failure properties. Therefore, we proposed a new thin film stress-analyzing technique using a nanoindentation method. For this aim, the shape change in the indentation load-depth curve during the stress-relief in film was theoretically modeled. The change in indentation depth by load-controlled stress relaxation process was related to the increase or decrease in the applied load using the elastic flat punch theory. Finally, the residual stress in thin film was calculated from the changed applied load based on the equivalent stress interaction model. The evaluated stresses for diamond-like carbon films from this nanoindentation analysis were consistent with the results from the conventional curvature method.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.49-53
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• 2004

Polymeric materials are widely used in the electronic industry as a common dielectric material or adhesive. The polymeric layer coated on Si substrate can be subjected to thermal stresses due to difference in thermal expansion coefficients. The mismatch in thermal properties between the polymeric layer and the substrate results in significant residual stresses. In this study, the thermal deformation is measured by a curvature measurement method using laser scanning, and the elastic modulus is calculated by an analytic model.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.4
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• pp.322-327
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• 2003

Giant magnetoresistance(GMR) NiO multilayer, which has been used to reading head of highly dense magnetic recording, was fabricated, and oxidized in an air during 80 days to study the dependence of magnetoresistance properties on residual stress in the interfaces. The magnetoresistance ratio and the exchange biasing $field(H_{ex})$ of $NiO(60nm)/Ni_{81}Fe_{19}(5nm)/Co(0.7nm)/Cu(2nm)/Co(0.7nm)/Ni_{81}Fe_{19}(7nm)$ spin valves were increased from 4.9% to 7.3%, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity ${\rho}$ decreased from $28{\mu}{\Omega}m$ to $17{\mu}{\Omega}m$, but ${\Delta}p$ did not almost change after the oxidation. Therefore, the increase of MR ratio is due to the decrease in the sheet resistivity. the reduced resistance may result from the increase in the reflection of conduction electrons at the oxidized top surface. Also, the increase in the exchange biasing field is originated from the reduction of residual stress at the interface of $NiO/Ni_{81}Fe_{19}$ according as the aging time increases.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.50-50
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• 2002

탄소 박막은 내마모, 화학적 생물학적 적합성 둥의 특성으로 언하여 많은 연구자들레 의하 여 연구되어지고 있다. 그러나 탄소 박막의 경우 높은 잔류응력과 이에 따른 낮은 밀착력으 로 언하여 증착 두께에 제한이 되어왔다. EB-PVD법을 이용하여 탄소막을 증착하는 경우 이러한 문제점을 해결하기 위하여 탄소막에 제 2의 금속원소를 첨가하거나 화합물 형태의 증착원 이용, 복합공정 (Hybrid process)을 통하여 증착 두께 의 제 한을 극복하고자 하는 연 구가 계속되고 있다. 본 연구에서는 탄소막의 잔류응력 제어와 증착 두께를 높이기 위하여 Plasma Activated E E-Beam Evaporation을 통하여 탄소막을 증착하였다. 탄소막 증착시 잔류응려과 밀착력에 대한 플라즈마의 영향올 알아보기 위하여 RF 플라즈마의 인업 전력에 따라 실험을 수행하였으며 필라멘트 전자 방출원을 이용하여 플라즈마 밀도가 미치는 영향도 알아보았다.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.237-242
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• 2001

Residual stress is a dominant obstacle to efficient production and safe usage of products by reducing the mechanical strength and failure properties. Especially, it causes interfacial failure and substrate deflection in the case of thin film. So, the exact evaluation and optimum control of thin film residual stress is indispensable. However, hole drilling or X-ray diffraction techniques have some limits in application to thin film. And, curvature technique for thin film materials cannot give the information about local stress variation. Therefore, we applied the nanoindentation technique in evaluating the thin film residual stress. In this study, we modeled the change of indentation loading curve for residually stressed and stress-free thin films during stress relaxation. The value of residual stress was directly related to the indentation depth change by relaxation. The residual stress from nanoindentation analysis was consistent with the result from curvature technique.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Polymer(Korea)
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• v.38 no.4
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• pp.510-517
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• 2014

A series of polyimide (PI) was prepared by reacting 4,4'-(hexafluoroisopropylidene)-diphthalic anhydride (6FDA) as the anhydride and bis(3-aminophenyl) sulfone (APS), bis[4-(3-aminophenoxy)-phenyl] sulfone (BAPS), 2,2-bis(4-aminophenyl)-hexafluoropropane (6FPD), 2,2-bis[4-(4-aminophenoxy)-phenyl]hexafluoropropane (6FBAPP), 2,2'-bis(trifluoromethyl)benzidine (TFDB), or 1,4-phenylenediamine (PDA) as the diamine. Residual stress behaviors were detected in-situ during thermal imidization of the polyimide precursors using a thin film stress analyzer (TFSA), and interpreted with respect to their morphology. According to the molecular orientation and packing order, the residual stress varied from 23.1 to 12.5 MPa, decreased with increasing chain rigidity. The thermal properties of the PI films were investigated using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and thermomechanical analysis (TMA). Their optical properties were measured by ultraviolet-visible spectrophotometer (UV-vis), and spectrophotometry. The properties of PI films were found to be strongly dependent upon the morphological structure. However, trade-offs between residual stress and optical properties were identified.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.116.2-116.2
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• 2011

연성 CIGS 태양전지를 제작하기 위해서는 휘어지는 연성 기판재의 적용이 반드시 필요하다. 상용되는 연성 기판재로는 플라스틱, 폴리이미드, 금속재가 있다. 그러나 플라스틱과 폴리이미드는 고효율의 CIGS 흡수층을 제조하기 위한 $500{\sim}600^{\circ}C$의 공정에 접합하지 못하다. 금속 기판재의 경우는 몰리브데늄, 알루미늄, 티타늄, 크롬강, 스테인레스강, 합금재 등이 있다. 이러한 금속 기판재 중에서 Fe-Ni 합금재는 Ni 함량의 변화에 따라 기계적, 자기적, 열팽창 특성이 다르게 나타나는 것으로 알려져 있다. 선행 연구에서 CIGS 태양전지의 기판재로 열팽창 계수가 박막층과 유사한 SUS400번 계열과 Fe-52Ni이 적합하다는 것을 확인 하였다. 따라서 본 연구에서는 유한요소해석(Finite element analysis) 프로그램인 Algor를 이용하여 CIGS solar cell을 설계하고 Fe-52Ni 기판재와 절연층인 SiO2, 흡수층인 CIGS의 두께에 따른 Cell의 잔류응력을 해석하였다.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.9
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• pp.135-141
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• 2003

MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to the residual stress inducing by the applied the various loads. And the very important physical property in the heated environment is the linear coefficient of thermal expansion. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduced the simple method to measure the trend of the residual stress by the indentation. Specimens were made of materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by nano-indentation using AFM and FEA. The existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased minimum 11.8％ comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.