• 한국표면공학회지
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• 제33권2호
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• pp.126-134
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• 2000

This study investigated the bath compositions and plating conditions and crystal structure used for achieving nickel-thallium-phosphorus deposits by means electroless plating. The electroless nickel-thallium-phosphorus deposits were achieved with a bath using sodium hypophosphite as the reducing agent and sodium citrate as the complexing agent. The depositing rate was 10.5mg.$cm^{2-1}$ .$hr^{-1 }$ from the optimistic bath composition, 0.1M nickel sulfate, 0.005M thallium sulfate, 0.2M sodium hypophosphite, and 0.05M sodium citrat and the recommended plating conditions, pH 5.5 and $90^{\circ}C$. The composition of alloy deposits determined by X-ray analysis (EDS) that the Thallium was increased with major increasing concentration of complexing agent and thallium ion in bath solution, it decreased according to the increasing concentrations of reduction agent in the bath solution, Bit Phosphorus showed a contrary to the thallium. It was observed from X-ray diffraction analysis, Scanning Electron Microscopy and Transmission Electron Microscopy. The crystalline structure of deposits was amorphous at the first deposited state but it was changed $Ni-T1-Ni_{5}$ $P_2$ polycrystalline when subjected to 1 hour heat treatment of more than $350^{\circ}C$. TEM observation demonstrated that the microstructure was identical to the result of the XRD at as deposited but it became $Ni-Tl-Ni_{5}$ $P_2$ polycrystalline when heated. And grain size was 10-50nm.

• 한국재료학회지
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• 제25권11호
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• pp.622-629
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• 2015

Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.

• 한국표면공학회지
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• 제22권2호
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• pp.101-108
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• 1989

Effects of Na+ ion on zeta potential of SiC and Al2O3 particles suspended in nikel sufate and nickel chloride solutions were investigated. various complexing agents for Ni2+ ion were added to electroless Ni composite bath and the effects of the complexing agents on zeta potential and codeposition of the particles from the baths were studied. It was confirmed that Na+ ion was absorbed on the particles bringing about the positive surface charge and thus they promoted the entrapment of the particles into the nickel deposit. On the basis of these results it was possible to deposit SiCc particle in nickel chloride electrolyte containing complex agent such as trisodium citrate+sodium succinate.

• 한국표면공학회지
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• 제22권2호
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• pp.78-87
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• 1989

Mechanism of formation of electroless composite coatings is similar to that of electrodeposited composite coating, but the amount of particles entraped in electroless coating is higher that the one of electrodeposited coatings. The methol of entrapment by the metal for SiC and Al2O3 particles is different from that for WC particles. In the former case the particles are gracually engulfed by the depositing metal, wheran with WC a metal envelope is rapidly fomed around each particles. This difference can be attributed to the difference in electrical resistivity of the particles. Inclusion density of SiC and Al2O3 particles during copeposition depend on the particle size, agitation condition, vabration conditions and electrolyte temperatures.

• 한국공작기계학회논문집
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• 제11권4호
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• pp.1-5
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• 2002

A 110 m diameter aspheric metal secondary mirror for a test model of an earth observation satellite camera was fsbricated by ultra-precision single point diamond turning (SPDT). Aluminum alloy for mirror substrates is known to be easily machinable, but not polishable due to its ductility. A harder material, Ni, is usually electrolessly coated on an A1 substrate to increase the surface hardness for optical polishing. Aspheric metal secondary mirror without a conventional polishing process, the surface roughness of Ra=10nm, and the form error of Ra=λ/12(λ=632.8nm) has been required. The purpose of this research is to find the optimum machining conditions for reflector cutting of electroless-Ni coated A1 alloy and apply the SPDT technique to the manufacturing of ultra precision optical components of metal aspheric reflector.

• 한국표면공학회지
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• 제24권4호
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• 한국분말재료학회지
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• 제27권1호
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• pp.25-30
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• 2020

Recently, the amount of heat generated in devices has been increasing due to the miniaturization and high performance of electronic devices. Cu-graphite composites are emerging as a heat sink material, but its capability is limited due to the weak interface bonding between the two materials. To overcome these problems, Cu nanoparticles were deposited on a graphite flake surface by electroless plating to increase the interfacial bonds between Cu and graphite, and then composite materials were consolidated by spark plasma sintering. The Cu content was varied from 20 wt.% to 60 wt.% to investigate the effect of the graphite fraction and microstructure on thermal conductivity of the Cu-graphite composites. The highest thermal conductivity of 692 W m^-1K^-1 was achieved for the composite with 40 wt.% Cu. The measured coefficients of thermal expansion of the composites ranged from 5.36 × 10^-6 to 3.06 × 10^-6K^-1. We anticipate that the Cu-graphite composites have remarkable potential for heat dissipation applications in energy storage and electronics owing to their high thermal conductivity and low thermal expansion coefficient.

• 한국표면공학회지
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• 제22권2호
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• pp.69-77
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• 1989

Codeposion of inert particles particles in a metallic mateix by electroless plating process involves two phenomena. Firstly, the adsorption of inercles and secondly, the adsorption of inert particles on the cathode. In the present paper the first adsorption phenomenon and in the next paper the second ane are studied in greaterdetail for the Ni-SiCc, Ni-Al2AO3 and Ni-WC systems. Measurements of the Zeta potentials for the SiC and Al2AO3 particles have been in different electrolyte solutions and the ionic species adsorbed on the Particles studied. The addition of sodium acetate, trisodium citrate and sodium phosphinate to nikel sulface sruomotes the zeta potential of SiC and Al2O3 particles, but zeta phosphinate to nickel is more positive than Al2O3 particles although the amount of nickel ion adsorbrd on the Al2O3 particles become greater than that of SiC particles. It is suggested that this is due to adsortion of Na ion onto the surface SiC particles.

• 한국표면공학회지
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• 제25권4호
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• pp.189-206
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

• 한국수소및신에너지학회논문집
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• 제9권4호
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• pp.169-176
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• 1998

Ni/MH 2차전지의 음극용 금속간화합물전극의 부식특성에 미치는 합금원소와 결합제의 영향을 조사하였다. 전극의 재료는 $(LM)Ni_{4.49}Co_{0.1}Mn_{0.205}Al_{0.205}$와 $(LM)Ni_{3.6}Co_{0.7}Mn_{0.3}Al_{0.4}$의 $AB_5$ type합금을 모재로 하였다. 여기에 Si sealant 또는 PTFE를 결합제로 첨가한 것과 원재료 분말에 구리를 20% 무전해도금한 것을 냉간 압착하여 전극을 제조하였다. 부식특성을 조사하기위해 탈공기된 6M의 KOH 용액에서 동전위법과 순환전위법을 이용하여 부식전류와 전류밀도를 측정하였다. 모재에 Co가 많이 함유되면 전극의 내식성을 향상시키고 Ni이 많이 함유되면 충전과 방전을 반복하는 동안에 전극의 안정성을 저하시켰다. 부식전류밀도는 Si sealant를 결합제로 사용한 전극의 경우가 PTFE를 사용한 전극의 경우보다 낮았고 Cu가 도금된 전극은 내식성에서 가장 우수하게 나타났다.