• Title/Summary/Keyword: 무전해도금

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Influences of Plating Conditions on Magnetic Properties of Co-P Thin Films by Electroless Plating (무전해도금에 의한 코발트- 인 박막의 자성에 미치는 도금조건의 영향)

  • Choi, Byoung-Ik;Yeo, Woon-Kwan;Lee, Ju-Seong
    • Journal of the Korean institute of surface engineering
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    • v.19 no.1
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    • pp.3-12
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    • 1986
  • Influences of pH, temperature, and composition of bath on the deposition rate and the magnetic properties were studied for two kinds of electroless Co-P plating bath. The results obtained are as follows. Ammonia alkaline citrate bath was more stable than ammonia alkaline tartrate bath, and the film deposited from citrate bath gave a higher squareness. The magnetic properties of the film obtained from citrate bath greatly depended upon pH. Under the optimum conditions, the film deposited from citrate bath had coercive force of 330 Oe and squareness of 0.67. However the films deposited from tartrate bath had coercive force of 300 Oe and squareness of 0.58.

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Selective Contact Hole Filling by Electroless Ni Plating (무전해Ni도금에 의한 선택적 CONTACT HOLE 충진)

  • 김영기;우찬희;박종완;이원해
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1992.05b
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    • pp.26-27
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    • 1992
  • The effect of activation and electroless nickel plating conditions on contact properties were investigated for selective electroless nickel plating of Si farers in order to obtain an optimum condition of contact hole filling. According to RCA prosess, p-type si 1 icon (100) surface was cleaned out and activated. The effects of temperture, DMAB concentration, time, and stirring iwere investigated for activation of p-type Si(100) surface. The optimal activation condition obtained was 0.5M HF, 1mM PdCl$_2$, 2mM EDTA, 7$0^{\circ}C$, 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentration, pH, and plating ti me were studied. The optimal plating condition found was 0. 10M NiS0$_4$.$H_2O$, 0.lIM Citrate, pH 6.8, 6$0^{\circ}C$, 30 minutes. The contact resistence of fi]ms wascomparatively low. It took 30 minutes to obtain 1$\mu$m thick film with 8$\mu$M DMAB concentration. The film surface roughness was improved with increasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained with the condition of temperature 6$0^{\circ}C$ and pH 6.8. The micro-victors hardness of film was about 600Hv and was decreased wi th increasing particle size of plating layer.

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Electroless plating of buried contact solar cell (전극함몰형 태양전지의 무전해도금)

  • Dong Seop Kim;Eun Chel Cho;Soo Hong Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.1
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    • pp.88-97
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    • 1996
  • The metallization is the key to determining cell costs, cell performance, and system reliability. Screen printing technology suffers from several limitations affecting mainly the front grid. The buried contact solar cell (BCSC) was specifically desinged to be compatible with low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating technique, we performed this metallization inexpensively and reliably. This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surfaces. Commercially available Ni, Cu and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metallization has resulted in an cell efficiency of 18.8%. The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 37.1 mA/$\textrm{cm}^2$, and fill factor of 77.8 %. The efficiency of over 18 % was achieved in the above 90% of the batch.

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Thickness Control of Electroplating Layer for Copper Pillar Tin Bump (구리기둥범프 용 전해도금 층 제어)

  • Moon, Dae-Ho;Hong, Sang-Jeen;Park, Jong-Dae;Hwang, Jae-Ryong;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.903-906
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    • 2011
  • The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

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Thermal Stability of the Interface between TaN Deposited by MOCVD and Electroless-plated Cu Film (MOCVD 방법으로 증착된 TaN와 무전해도금된 Cu박막 계면의 열적 안정성 연구)

  • 이은주;황응림;오재응;김정식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1091-1098
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    • 1998
  • Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

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Ni/Au Electroless Plating for Solder Bump Formation in Flip Chip (Flip Chip의 Solder Bump 형성을 위한 Ni/Au 무전해 도금 공정 연구)

  • Jo, Min-Gyo;O, Mu-Hyeong;Lee, Won-Hae;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.700-708
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    • 1996
  • Electroless plating technique was utilized to flip chip bonding to improve surface mount characteristics. Each step of plating procedure was studied in terms pf pH, plating temperature and plating time. Al patterned 4 inch Si wafers were used as substrstes and zincate was used as an activation solution. Heat treatment was carried out for all the specimens in the temperature range from room temperature to $400^{\circ}C$ for $30^{\circ}C$ minutes in a vacuum furnace. Homogeneous distribution of Zn particles of size was obtained by the zincate treatment with pH 13 ~ 13.5, solution concentration of 15 ~ 25% at room temperature. The plating rates for both Ni-P and Au electroless plating steps increased with increasing the plating temperature and pH. The main crystallization planes of the plated Au were found to be (111) a pH 7 and (200) and (111) at pH 9 independent of the annealing temperature.

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주석 전기도금과 열압착본딩을 이용한 Bi2Te3계 열전모듈의 제작

  • Yun, Jong-Chan;Choe, Jun-Yeong;Son, In-Jun;Jo, Sang-Heum;Park, Gwan-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.129-129
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    • 2017
  • 열전재료는 열에너지를 전기에너지로 또는 전기에너지를 열에너지로 직접 변환하는데 가장 널리 사용되는 재료이다. $Bi_2Te_3$계 열전 재료는 400K 이하의 비교적 저온 영역에서 높은 성능지수(Dimensionless Figure of merit, ZT($={\alpha}2{\sigma}T/{\kappa}$, ${\alpha}$: 제백계수, ${\sigma}$: 전기전도도, T: 절대온도, ${\kappa}$: 열전도도))를 나타내는 열전재료이며 자동차 시트나 정수기 등에 응용되고 있다. 열전모듈은 제조시 수십 개에서 수백 개 이상의 n형 및 p형 열전소자를 알루미나($Al_2O_3$)와 같은 세라믹 기판(substrate) 상에 접합된 동 전극 위에 전기적으로 서로 직렬로 접합시켜 제조한다. 기존의 열전모듈의 제조방법에는 동 전극 위에 위에 Sn합금 분말과 플럭스(flux)의 혼합물인 솔더페이스트를 스크린 인쇄법을 사용하여 동 전극에 도포한 다음, 그 위에 열전소자를 얹고 약 520K의 열풍을 가하여 솔더를 용융시켜 열전소자와 동 전극을 접합시킨다. 스크린 인쇄법에서는 인쇄 압력이 일정하지 않으면, 솔더페이스트 층의 두께가 균일하지 않게 되어 열전소자 접합부의 불량을 유발시킨다. 그러나 열모듈은 단 하나의 접합 불량이 모듈 전체의 열전변환성능에 심각한 영향을 줄 수 있기 때문에 본 연구에서는 이러한 문제점을 해결하기 위해, 솔더페이스트를 도포하지 않고 열전소자를 직접 동 전극과 접합할 수 있는 방법을 고안하였다. 무전해도금을 이용한 니켈층을 형성시킨 $Bi_2Te_3$계 열전소자 표면에 약 $50{\mu}m$의 주석도금층을 전기도금법을 구사하여 형성시켰다. 그 후, wire cutting을 통하여 $3mm{\times}3mm{\times}3mm$의 크기로 절단한 주석도금된 열전소자를 동 전극에 얹고 1.1KPa의 압력을 가하면서 523K의 핫플레이트 위에서 3분간 방치하여 직접(direct) 열압착 접합을 실시하였다. 접합부의 단면을 SEM을 이용하여 관찰한 결과, 동 전극과 열전소자 사이의 계면에 용융 후 응고된 주석층이 결함없이 균일하게 형성된 양호한 접합부를 관찰할 수 있었다. 따라서, 솔더페이스트를 이용하지 않고, 열전소자 표면에 주석도금을 실시한 후, 동 전극과 직접 열압착 본딩을 실시하는 방법은 균일한 접합계면을 얻을 수 있는 새로운 공정으로 기대된다.

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A Study on the Magnetic Properties of the Co-Ni-P thin Plate by Electroless Plating (무전해도금법에 의한 Co-Ni-P 박막의 자기적특성에 관한 연구)

  • Kim, C.W.;Lee, C.;Yoon, S.R.;Joung, I.
    • Korean Journal of Materials Research
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    • v.5 no.8
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    • pp.1013-1019
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    • 1995
  • The thin plate of Co-Ni-P was deposited on the polyester film by the electroless plating method. Through present experiments, deposition rates and metal compositions of the plates were determined according to compositions of solution, pH and temperature. Also, magnetic properties of plates were examined according to metal compositions. Considering magnetic properties and deposition rates of electroless plating, the best condition was obtained as pH of 8.5 and 90℃. It was observed that metal compositions were evidently varied by the pH of solutions and the concentration of complex agents. However. they were not affected by other factors. At the optimum condition, the composition of the plate was Co(78%), Ni(16%), and P(6%). Also, it was found that the coercive force was 370 Oe, and squareness was 0.65 at this condition. Magnetic properties (hard or soft) of thin plates were determined by metal compositions. Therefore. the plate became soft magnetic plate as the composition of nickel increased over 30 per cents. The crystal structure of the soft magnetic plate was found to be amorphous in which it was strongly oriented to the (111)phahe of nickel. On the ohter hand, the hard magnetic place was found to be hcp crystalline of α-cobalt which was oriented to the (101)phase of cobalt and the (100)phase of cobalt.

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Preparation of Ni-PTFE Electrode using Nickel Plating for Alkaline Fuel Cell (니켈도금기술을 이용만 알칼리형 연료전지용 Ni-PTFE전극의 개발)

  • Kim, Jae-Ho;Lee, Young-Seak
    • Transactions of the Korean hydrogen and new energy society
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    • v.20 no.4
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    • pp.291-299
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    • 2009
  • Ni-plated polytetrafluoroethylene(Ni-PTFE) particles($25{\mu}m$, $500{\mu}m$) were prepared by using nickel electroless plating. The Ni content in Ni-PTFE particles increased with increasing the amount of reduction agent. At about 53 wt% Ni content, $25{\mu}m$ Ni-PTFE particles showed conductivity of 320S/m. The Ni-PTFE particles were formed into the Ni-PTFE plate using heat treatment at $350^{\circ}C$ under $10{\sim}1000kg/cm^2$. The Ni-PTFE plate displayed the high conductivity of 5100S/m due to the formation of 3-dimentional Ni network. The plate was used as an electrode in an alkaline fuel cell(AFC). In terms of the current density, the Ni-PTFE electrode having higher Ni content(53 wt%) showed improved performance.

The Wear Resistance of Electroless Nickel and Electroless Composite(Ni-P-X, X: SiC, $Al_2$O$_3$, Diamond) Coating Layers (무전해 니켈도금과 무전해복합도금(Ni-P-X, X: SiC, $Al_2$O$_3$, Diamond)의 내마모성 비교)

  • Kim, M.;Chang, D. Y.;Jeong, Y. S.;Ro, B. H.;Lee, K. H.
    • Journal of the Korean institute of surface engineering
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    • v.27 no.4
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    • pp.193-206
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    • 1994
  • A wear behavior of electroless (Ni-P-X, X: SiC, $Al_2O_3$, Diamond) composite coating layers, formed under various conditions on commerical grade low carbon steel, has been investigated using Taber abrasion tester and scanning electron microscope. Several factors, which are type of particles, co-deposited content, particle size, distribution of particles and heat-treatment, influenced the wear resistance. The wear resistance of the composited coating layers after heat-treatment at $400^{\circ}C$ for 1 hr was increased 70 times with diamond, 15 times with SiC and 8 times with $Al_2O_3$, compared with the electroless nickel plating layer without heat-treatment.

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