• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.123-123
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• 2012

최근 연구되고 있는 TSV(Through Silicon Via) 기술은 Si 웨이퍼 상에 직접 전기적 연결 통로인 관통홀을 형성하는 방법으로 칩간 연결거리를 최소화 할 수 있으며, 부피의 감소, 연결부 단축에 따른 빠른 신호 전달을 가능하게 한다. 이러한 TSV 기술은 최근의 초경량화와 고집적화로 대표되는 전자제품의 요구를 만족시킬 수 있는 차세대 실장법으로 기대를 모으고 있다. 한편, 납땜 재료의 주 원료인 주석은 주로 반도체 소자의 제조, 반도체 칩과 기판의 접합 및 플립 칩 (Flip Chip) 제조시의 범프 형성 등 반도체용 배선재료에 널리 사용되고 있다. 최근에는 납의 유해성 때문에 대부분의 전자제품은 무연솔더를 이용하여 제조되고 있지만, 주석을 이용한 반도체 소자가 고밀도화, 고 용량화 및 미세피치(Fine Pitch)화 되고 있기 때문에, 반도체 칩의 근방에 배치된 주석으로부터 많은 알파 방사선이 방출되어 메모리 셀의 정보를 유실시키는 소프트 에러 (Soft Error)가 발생되는 위험이 많아지고 있다. 이로 인해, 반도체 소자 및 납땜 재료의 주 원료인 주석의 고순도화가 요구되고 있으며, 특히 알파 방사선의 방출이 낮은 로우알파솔더 (Low Alpha Solder)가 요구되고 있다. 이에 따라 본 연구는 4인치 실리콘 웨이퍼상에 직경 $60{\mu}m$, 깊이 $120{\mu}m$의 비아홀을 형성하고, 비아 홀 내에 기능 박막증착 및 전해도금을 이용하여 전도성 물질인 Cu를 충전한 후 직경 $80{\mu}m$의 로우알파 Sn-1.0Ag-0.5Cu 솔더를 접합 한 후, 접합부 신뢰성 평가를 수행을 위해 고속 전단시험을 실시하였다. 비아 홀 내 미세구조와 범프의 형상 및 전단시험 후 파괴모드의 분석은 FE-SEM (Field Emission Scanning Electron Microscope)을 이용하여 관찰하였다. 연구 결과 비아의 입구 막힘이나 보이드(Void)와 같은 결함 없이 Cu를 충전하였으며, 고속전단의 경우는 전단 속도가 증가할수록 취성파괴가 증가하는 경향을 보였다. 본 연구를 통하여 전해도금을 이용한 비아 홀 내 Cu의 고속 충전 및 로우알파 솔더 볼의 범프 형성이 가능하였으며, 이로 인한 전자제품의 소프트에러의 감소가 기대된다.

• Journal of the Korean Magnetics Society
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• v.7 no.4
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• pp.191-195
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• 1997

$Co_{84}Hf_{16}$ (1300$\AA$, 2150$\AA$) thin films were prepared by dc magnetron sputtering method. To investigate the uniaxial anisotrpy of the sample, the saturation and effective magnetization of the thin films were measured by VSM and FMR, respectively. The spectroscopic splitting g factor were estimated from the ferromagnetic resonance curves. For 1300$\AA$, 2150$\AA$, the effective magnetization was measured at the temperatures from T=77K to T=300K. The results were analyzed in terms of Bloch's law $M_s(T)=M_s(0)(1BT^{3/2}CT^{5/2}$. The Bloch coefficient B and C were determined by fitting. $M_{eff}(0)$ was obtained by extrapolating $M_{eff}$ to 0 K. From this result, the spinwave stiffness constants D was also determined and the exchange stiffness constants $A_{eff}$ were calculated by Kittel's resonance conditions.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Journal of Korea Multimedia Society
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• v.9 no.5
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• pp.595-605
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• 2006

In this thesis, GPS and the electronic mapping were used to realize such a system by recognizing license plate numbers and identifying the location of objects that move at synchronous times with simulated movement in the electronic map. As well, throughout the study, a camera attached to a PDA, one of the mobile devices, automatically recognized and confirmed acquired license plate numbers from the front and back of each car. Using this mobile technique in a wireless network, searches for specific plate numbers and information about the location of the car is transmitted to a remote server. The use of such a GPS-based system allows for the measurement of topography and the effective acquisition of a car's location. The information is then transmitted to a central controlling center and stored as text to be reproduced later in the form of diagrams. Getting positional information through GPS and using image-processing with a PDA makes it possible to estimate the correct information of a car's location and to transmit the specific information of the car to a control center simultaneously, so that the center will get information such as type of the car, possibility of the defects that a car might have, and possibly to offer help with those functions. Such information can establish a mobile system that can recognize and accurately trace the location of cars.

• Journal of the Korea Society of Computer and Information
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• v.25 no.6
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• pp.9-15
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• 2020

In this paper, we propose a case that drone (unmanned aerial vehicle), one of the representative technologies of the 4th Industrial Revolution, threatens airport safety and privacy infringement, and describes a drone control system proposal to solve the problem. Unmanned aerial vehicle (Drone) is creating a serious problem recently, In Korea, on May 21, 19, according to the Jeju Regional Aviation Administration, drones flew over Jeju Jeongseok Airfield twice in the same month, causing problems in aircraft operation. In overseas cases, two drones near the runway of Gatwick International Airport in the UK There has been a disturbance in which the takeoff and landing of the aircraft flies for a while, and various problems have occurred, such as voyeuring the private life of an individual using a drone. This paper is equipped with an Acess Point transponder mounted on a drone (unmanned aerial vehicle), and unspecified many who want to receive flight information (coordinates, altitude, and obstacles) of the drone access the drone AP, receive and receive the flight information of the drone, and receive unspecified multiple Drone AP flight information is collected and collected to provide the information of the drone currently floating on one user interface screen. In addition, an AP transponder is proposed to operate a safe drone (unmanned aerial vehicle) and the drone's flight information is transmitted., To receive and collect and collect data.

• Ocean and Polar Research
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• v.41 no.3
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• pp.121-133
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• 2019

Natural variability associated with a variety of large-scale climate modes causes regional differences in sea level rise (SLR), which is particularly remarkable in the Pacific Ocean. Because the superposition of the natural variability and the background anthropogenic trend in sea level can potentially threaten to inundate low-lying and heavily populated coastal regions, it is important to quantify sea level variability associated with internal climate variability and understand their interaction when projecting future SLR impacts. This study seeks to identify the dominant modes of sea level variability in the tropical Pacific and quantify how these modes contribute to regional sea level changes, particularly on the two strong El $Ni{\tilde{n}}o$ events that occurred in the winter of 1997/1998 and 2015/2016. To do so, an adaptive data analysis approach, Ensemble Empirical Mode Decomposition (EEMD), was undertaken with regard to two datasets of altimetry-based and in situ-based steric sea levels. Using this EEMD analysis, we identified distinct internal modes associated with El $Ni{\tilde{n}}o$-Southern Oscillation (ENSO) varying from 1.5 to 7 years and low-frequency variability with a period of ~12 years that were clearly distinct from the secular trend. The ENSO-scale frequencies strongly impact on an east-west dipole of sea levels across the tropical Pacific, while the low-frequency (i.e., decadal) mode is predominant in the North Pacific with a horseshoe shape connecting tropical and extratropical sea levels. Of particular interest is that the low-frequency mode resulted in different responses in regional SLR to ENSO events. The low-frequency mode contributed to a sharp increase (decrease) of sea level in the eastern (western) tropical Pacific in the 2015/2016 El $Ni{\tilde{n}}o$ but made a negative contribution to the sea level signals in the 1997/1998 El $Ni{\tilde{n}}o$. This indicates that the SLR signals of the ENSO can be amplified or depressed at times of transition in the low-frequency mode in the tropical Pacific.

• Korean Journal of Food Science and Technology
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• v.45 no.5
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• pp.531-536
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• 2013

We developed a simple, sensitive, and specific analytical method for prometryn using gas chromatography-mass spectrometry (GC-MS). Prometryn is a selective herbicide used for the control of annual grasses and broadleaf weeds in cotton and celery crops. On the basis of high specificity, sensitivity, and reproducibility, combined with simple analytical operation, we propose that our newly developed method is suitable for use as a Ministry of Food and Drug Safety (MFDS, Korea) official method in the routine analysis of individual pesticide residues. Further, the method is applicable in clams. The separation condition for GC-MS was optimized by using a DB-5MS capillary column ($30m{\times}0.25mm$, 0.25 ${\mu}m$) with helium as the carrier gas, at a flow rate of 0.9 mL/min. We achieved high linearity over the concentration range 0.02-0.5 mg/L (correlation coefficient, $r^2$ >0.998). Our method is specific and sensitive, and has a quantitation limit of 0.04 mg/kg. The average recovery in clams ranged from 84.0% to 98.0%. The reproducibility of measurements expressed as the coefficient of variation (CV%) ranged from 3.0% to 7.1%. Our analytical procedure showed high accuracy and acceptable sensitivity regarding the analytical requirements for prometryn in fishery products. Finally, we successfully applied our method to the determination of residue levels in fishery products, and showed that none of the analyzed samples contained detectable amounts of residues.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.