• Journal of the Korean Chemical Society
• /
• v.47 no.6
• /
• pp.659-662
• /
• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.189-190
• /
• 2005

본 논문에서는 탄소나노튜브를 성장시키기 전 과정인 전처리시 촉매 층에 인가되는 마이크로웨이브 파워에 따른 탄소나노튜브의 성장 및 특성 변화를 관찰하였다. 촉매층으로 사용되는 Ni층과 adhesion층으로 사용되는 Ti층은 마그네트론 스퍼터링 방식으로 증착하였고, 탄소나노튜브 성장에는 마이크로웨이브 플라즈마 화학기상 증착기를 사용하였다 탄소나노튜브의 성장특성은 평면과 단면 SEM image를 통하여 관찰하였으며, Raman spectrometer 분석을 통하여 성장된 탄소나노튜브의 구조적 특성을 알아보았다.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1995-1997
• /
• 2005

마이크로웨이브 화학기상 증착방식으로 탄소 나노튜브를 성장시켰다. 탄소나노튜브를 성장시키기 위한 가스로는 수소$(H_2)$와 메탄$(CH_4)$ 가스를 사용했으며, 실리콘 기판에 마그네트론 스퍼터링 방식으로 10nm 두께의 Ni층과 adhesion 충으로 사용되는 20nm 두께의 Ti층을 증착하였다. 본 논문에서는 탄소나노튜브를 성장시킬 때의 압력에 따른 성장 특성을 알아보았다. 작업 진공도에 따른 탄소나노튜브의 성장 특성은 FESEM image와 TEM image 을 이용하여 관찰하였으면 Raman spectrometer 분석을 통하여 성장된 탄소나노튜브의 구조적 특성을 알아보았다.

• Composites Research
• /
• v.29 no.4
• /
• pp.151-155
• /
• 2016

Graphene has been a valuable candidate for use as electrodes for supercapacitors. In order to improve the surface area of graphene, three-dimensional graphene was synthesized on porous Ni nanostructure using thermal chemical vapor deposition and microwave plasma chemical vapor deposition. The structural and chemical characterization of synthesized graphene was performed by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was confirmed that three-dimensional and high-crystalline multilayer graphene onto various substrates was synthesized successfully.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.92-99
• /
• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.160-161
• /
• 2009

마이크로웨이브 플라즈마 화학기상증착(MPCVD) 시스템을 이용하여 실리콘 웨이퍼 위에 나노결정질 다이아몬드 박막을 증착하였다. 공정압력, 마이크로웨이브 전력, Ar/$CH_4$ 조성비를 일정하게 놓고 기판온도를 $400^{\circ}C$ 및 $600^{\circ}C$, 증착시간을 0.5, 1, 4시간으로 변화시켜 박막의 성장 과정을 관찰하였다. 성장 초기에 약 30 nm 크기의 나노 결정립으로 이루어진 구형 입자가 형성되어 시간의 경과에 따라 입자들이 성장하고 4시간 이후에는 입자들이 서로 붙어 완전한 박막을 형성함을 관찰하였다. 같은 증착시간에서 기판온도가 $400^{\circ}C$에서 $600^{\circ}C$로 증가함에 따라 다이아몬드 입자의 크기가 증가하였다. 시간의 경과에 따라 기판 위에서 입자들이 차지하는 면적의 비율은 증가하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.124-124
• /
• 2013

마이크로웨이브 플라즈마 화학기상증착(MPCVD) 시스템을 이용하여 서로 다른 기판(Si,SiC,W,Ti) 위에 나노결정질 다이몬드 박막을 증착하였다. 공정압력, 마이크로웨이브 전력, $Ar/CH_4$,기판온도를 일정하게 놓고, 증착시간을 0.5,1,2h으로 변화시켜 박막의 성장과정을 관찰하였다. 기판 종류에 따라 성장 초기에 형성되는 입자의 시간이 달랐으며, 2h 이후에는 입자들이 서로 붙어 완전한 박막을 형성함을 관찰하였다. 같은 증착시간에서 서로 다른 기판을 비교하였을 때, W > (Si, SiC) > Ti 기판의 순이었다.

• Korean Chemical Engineering Research
• /
• v.46 no.6
• /
• pp.1063-1068
• /
• 2008

The photocatalytic degradation of methylene blue water solution was carried out by irradiating microwave and UV light simultaneously using $TiO_2$ photocatalyst balls prepared by Chemical Vapor Deposition method. A microwave-discharged electrodeless UV lamp was developed to use microwave and UV simultaneously for photocatalytic reactions. The results of photocatalytic degradation of methylene blue showed that the decomposition rate increased with the microwave intensity, the circulating fluid velocity and auxiliary oxidizing agents added. Especially, the rate constant of $H_2O_2$-added photocatalytic reaction increased about three times from $0.0061min^{-1}$ to $0.0197min^{-1}$ when microwave was additionally irradiated. This study demonstrates that the microwave irradiation can play a very important role in photocatalytic degradation using peroxides although it is not easy to quantitatively assess the effect of microwave on photocatalytic reactions from the experimental data of this study.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.240-248
• /
• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CH_4/H_2$ gas flow ratio, total, gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. It is introduced how the real-time spectroscopic ellipsometry is used and the data are analyzed with the view of getting the growth condition and the accompanied features for a good quality of diamond films. And it is determined the important parameters during the diamond film growth, which include the final sample will be measured with Raman spectroscopy to confirm the diamond component included in the film.

• Journal of the Korean Vacuum Society
• /
• v.22 no.1
• /
• pp.31-36
• /
• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.