• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1649-1650
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• 2006

반도체 소자의 선폭이 나노미터 스케일로 진입함에 따라 소자의 물리적 특성을 나노미터 스케일에서 정밀하게 측정하고자 하는 요구가 증대되고 있다. Atomic Force Microscopy (AFM)은 나노미터 이하의 해상도를 가지고 물질 표면의 기하하적, 전기적 특성 등을 측정할 수 있으므로 나노소자 연구에 필수적인 도구가 되었다. 그러나 AFM은 낮은 측정속도와 탐침의 기하학적 형상에 의한 AFM 영상의 왜곡 등과 같은 치명적인 단점도 가지고 있다. AFM의 낮은 측정 속도를 개선하기 위해서 진보된 마이크로머시닝기술을 이용하여 캔틸레버의 크기를 줄이거나 캔틸레버 위에 박막 구동기를 집적시키는 등의 노력이 진행되고 있으나, 이 경우 전통적인 식각 공정을 이용하여 캔틸레버 위에 tip을 형성하는 것이 매우 어렵다. 본 연구에서는 이미 제작된 캔틸레버 위에 전자빔 조사법을 이용하여 탄소상 tip을 직접 성장시킴으로써 전통적인 식각 공정에 비해 매우 간단하고 값싸며, 활용도가 높은 공정을 개발하였다. 탄소상 tip 성장에 필요한 탄소 소스는 dipping 방법을 이용하여 공급하였고, 시분할법을 사용하여 캔틸레버의 원하는 위치에 tip을 성장시킬 수 있었다. 이렇게 제작된 tip은 최대 $5{\mu}m$ 높이까지 가능했으며, 종횡비는 10:1 이상이어서 tip의 형상에 의한 AFM 영상 왜곡 현상을 최소화할 수 있을 것으로 기대된다.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.871-876
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• 2019

We fabricated concave optical fiber tips using hydrofluoric acid solution and photothermal effect induced by $1.55{\mu}m$ wavelength laser applied to an optical fiber. The radius of curvature of the concave optical fiber tips fabricated with different applied laser power, etching time, and concentration of hydrofluoric acid was measured with an optical microscope. Then, we analyzed how the radius of curvature changes for those three variables. In addition, the reliability of the measurement method using a microscope was verified through a free spectral range(FSR) and a scanning electron microscope(SEM). Through this paper, the radius of curvature can be adjusted by the variables of the fabrication process of concave optical fiber tips; thus, it is overcoming the limitations of conventional optical fiber etching methods using hydrofluoric acid solutions.

• Journal of Biomedical Engineering Research
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• v.23 no.3
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• pp.217-225
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• 2002

The implantable middle ear(IME) system, which has good sound quality. superior sound intelligibility and wide frequency characteristics. can resolve the sound distortion and ringing effect by sound feedback at high gain operation those are the major problems of conventional hearing aid. In this paper, we have manufactured the IME system using differential electromagnetic transducer(DET) and verified the performance of the system by carrying out vibration and animal implanting experiment. The DET was manufactured using micro-machining technology and vibration experiment of the transducer was performed to inspect whether the transducer could vibrate in accordance with the applied sound signal or not. And the result of the loaded experiment using temporal bone sampled from cadaver showed that the transducer can drive the middle ear bone and transmit the signal to inner ear After the internal unit of IME system was implanted in a dog. the auditory brainstem response (ABR) test was carried out. The result of the test indicated the Proper behavior of the IME system in the living body From the results of the experiments, it is verified that the manufactured system ewll work well when it is applied to human and a basis of clinical experiment of IME system to real human hearing impaired was be arranged.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.304-313
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• 2001

In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.11-18
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• 2002

This paper presents a CPW phase shifter and shunt stub with air-bridge on a 10-${\mu}m$-thick oxidized porous silicon(OPS) substrate using surface micromachining. The line dimensions of the CPW phase shifter was designed with S-W-Sg = 100-30-400 ${\mu}m$. And the width and length of the air-bridge with "ㄷ“ shape were 100 ${\mu}m$ and 400-460-400 ${\mu}m$, respectively. In order to achieve low attenuation, stepped air-bridge CPW phase shift was proposed. The insertion loss of the stepped air-bridge CPW phase shift is more improved than that of no stepped air-bridge CPW phase shift. The measured phase characteristic of the fabricated CPW phase shifter is close to 180$^{\circ}$ over a very broad frequency range of 28 GHz. The measured working frequency of short-end series stub is 28.7 GHz and the return loss is - 20 dB. And the measured working frequency of short-end shunt stub is 28.9 GHz and the return loss is - 23 dB at midband. As a result, the pattering of stub in the center conductor of CPW lines can offer size reduction and lead to high density chip layouts.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.346-355
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• 1997

In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer's specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were$500{\mu}m$, $350{\mu}m$, $100{\mu}m$, and $5{\mu}m$, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6- beam accelerometers were fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.

• The Journal of the Acoustical Society of Korea
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• v.24 no.7
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• pp.379-386
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• 2005

Among various kinds of hearing aids which have been developed so far. the conventional air conduction hearing aids have some problems such as the acoustic distortion, an howling effect due to acoustic feedback. Another type of hearing aid. the cochlear implant system can be applied to the profound imparied person. However. it shows the disadvantage that there is no possibility of recovery of the acoustic organ such as ossicle. On the other hand. the implantable middle ear heaving device directly vibratos the ossicular chain and has better sound qualify. good cosmetics for appearance. and wide frequency responses so that it can overcome the defects or the conventional hearing aids. In this paper, a mathematical modeling and a momentum equation derivation of the DET has been performed. For the optimization of the structure dimension generating maximal vibrating force of the DET. the computer simulation using a finite element analysis (FEA) software has been performed. Also. the vibrating transducer has been designed to make the frequency characteristics or the transducer be similar to those of the normal middle ear. Through the experimental results, the measured vibration characteristics of the DET has been evaluated to verify the performance for the application to implantable middle ear hearing devices.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1995.04a
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• pp.282-286
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• 1995

일반적으로 관성계 내의 물체에 대한 동적특성의 파악을 위해서는 속도, 가속도 및 각속도, 각가속도에 대한 정보를 필요로 하며 자이로는 이중에서 각속도를 측정하는 장치이다. 운동하는 질량에 회전각속도가 인가될 때 발생되는 코리올리힘을 측정하여 회전각속도를 검출하는 개념의 각속도 센서인 진동자이로는 성능이 회전형 자이로에 비해 떨어지나 구조가 간단하고 소형이며 대량생산이 가능한 장점이 있다. 진동자이로의 효시로는 1950년 영국의 Sperry Gyroscope Company의 "Gyroton"이며, 전자기력을 이용한 가진과 측정이 그 특징으로서 실험실 조건에서 지구의 자전속도를 측정할 수 있었다. 그후 1960년대에 General Electric에서 "VYRO"라는 모델을 개발했는데 압전소자를 이용하여 가진과 측정을 하는 방법이 사용되었다. 1980년대에 Watson Ind., Soderkvist등은 센서자체가 압전물질로 만들어진 자이로를 실험하였고 1990년도에 들어서는 진동자이로의 원리를 마이크로 머시닝 기술과 연계시켜서 소형 경량화와 대량생산을 목표로 연구가 일부 진행되고 있다. 현재 제품화되어 실제 응용되고 있는 예로는 무라다사의 삼각프리즘 형태의 자이로, 토킨사의 원통형 자이로 등이 있으며 이러한 자이로는 캠코더 화면의 안정화 장치에 주로 사용되고 있다. 본 논문에서는 압전소자의 압전, 전왜 방정식으로 출발하여 자이로헤드의 동적 거동을 해석하였다. 진동자이로는 물체의 공진주파수에서의 진동현상을 이용하며, 두 방향의 고유진동수를 일치시켜야 하는 등의 설계조건이 있다. 이러한 조건을 만족하도록 사각보 구조를 기본으로 하여 새로운 형태의 자이로헤드를 고안하였다. 자이로헤드의 구동회로를 설계, 해석하고 각속도를 측정할 수 있는 검출회로를 설계하여 설계된 진동자이로의 동적 특성을 확인하고 보정회로를 이용하여 사용 주파수 영역을 넓혔다.이용하여 사용 주파수 영역을 넓혔다.러한 강이성들이 보장되는 제어이론들 중 H$_{\infty}$ 제어이론이 많이 연구/응용 되고 있다. 특히 공칭 플랜트 모델과 함께 사용되는 플랜트 모델과 함께 사용되는 플랜트 불확실성 모델은 직접적으로 성능 및 안정도에 영향을 미치므로 주의 깊게 선정해야 한다. 방법의 실질적인 적용에는 어려움이 있다. 본 연구에서는 기존의 방법들의 단점을 극복할 수 있는 새로운 회귀적 모우드 변수 규명 방법을 개발하였다. 이는 Fassois와 Lee가 ARMAX모델의 계수를 효율적으로 추정하기 위하여 개발한 뱉치방법인 Suboptimum Maximum Likelihood 방법[5]를 기초로 하여 개발하였다. 개발된 방법의 장점은 응답 신호에 유색잡음이 존재하여도 모우드 변수들을 항상 정확하게 구할 수 있으며, 또한 알고리즘의 안정성이 보장된 것이다.. 여기서는 실험실 수준의 평 판모델을 제작하고 실제 현장에서 이루어질 수 있는 진동제어 구조물에 대 한 동적실험 및 FRS를 수행하는 과정과 동일하게 따름으로써 실제 발생할 수 있는 오차나 error를 실험실내의 차원에서 파악하여 진동원을 있는 구조 물에 대한 진동제어기술을 보유하고자 한다. 이용한 해마의 부피측정은 해마경화증 환자의 진단에 있어 육안적인 MR 진단이 어려운 제한된 경우에만 실제적 도움을 줄 수 있는 보조적인 방법으로 생각된다.ofile whereas relaxivity at high field is not affected by τS. On the other hand, the change in τV does not affect low field profile but strongly in fluences on both inflection fie이 and the maximum relaxivity value. The results shows a fluences on both inflection field and the

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.