• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.19-25
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• 2002

In this paper, to improve the characteristics of a transmission line on silicon substrate, we fabricated air-bridge interconnected CPW transmission line on a 10-${\mu}{\textrm}{m}$-thick oxidized porous silicon(OPS) substrate using surface micromachining. Air-bridge interconnected CPW of S-W-S = 30-80-30 ${\mu}{\textrm}{m}$has insertion loss of -0.25 ㏈ and return loss of -28.9 ㏈ at 4㎓ And return loss of CPW with stepped compensated air-bridge(S-W-S : 30-100-30 ${\mu}{\textrm}{m}$) is improved -0.98㏈ at 4㎓. The results indicate that the thick OPS provides an approach to incorporate high performance, low cost microwave and millimeter wave circuits in a high-resistivity silicon-based process.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.64-71
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• 1995

We have developed a silicon etching method by which highly doped layers are selectively etched using stain etching technique. Current supply to the backside contact of silicon wafer and special reactor are not required in this method. Therefore this method is much simpler than anodic reaction method and could be applied to standard VLSI process. In addition, highly doped layers of several wafer structures, including the structures where conventional anodic reaction method cannot be used, could be preferentially etched by this technique. We have also fabricated micromechanical structures such as cantilevers and air-bridges on the $n/n^{+}/n$ wafer and air-bridges on the $p/p^{+}$ wafer using this stain etching technique.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.285-289
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• 2003

This paper proposes a 10 ${\mu}{\textrm}{m}$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and rnicrornachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and rapid thermal oxidation (RTO) process (105$0^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to 10 ${\mu}{\textrm}{m}$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 1 dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about - 20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.400-406
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• 1999

Piezoresistive flow sensors with four different types of microbeam structures were fabricated using (100), n/$n^+$/n three-layer silicon wafer and their characteristics were investigated. Piezoresistors were formed through boron diffusion and its values were about $1\;k{\Omega}$. Three-dimensional silicon microbeams were constructed by porous silicon micromachining and curled microbeams were fabricated by the difference in the thermal expansion coefficient between silicon and metal. The output response of the fabricated sensor was evaluated through half- bridge. The output voltage increased with increasing length of microbeam at the same flow velocity, while the detectable measurement range extended with decreasing length of microbeam. The output voltage of the fabricated sensors were increased with quotient of 3.2 of the flow rate since the stress of the beam versus the gas flow showed non-linear characteristics.

• Journal of Sensor Science and Technology
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• v.12 no.5
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• pp.199-204
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• 2003

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097-1.21\;mV/V{\codt}kgf/cm^2$ in the temperature range of $25-200^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.925-928
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• 2005

In this study, we fabricated the DAMLs using surface micromachining technology as well a low loss coupler for the millimeter-wave band applications using these DAMLs. The structure of DAML is that a signal line is supported on ground plane by dielectric posts. Therefore it has advantages about the loss characteristic and the stable structure. The other advantage of the DAML process is a simple and convenient technique using 4 mask steps, even if it has a micromachining technology. The lowest loss of the fabricated DAML was obtained 2.2 dB/cm at 110 GHz. To obtain the low loss characteristic, couplers were designed and fabricated by using DAMLs. The fabricated ring hybrid coupler has the coupling of 3.58 dB and the thru of 3.31 dB at 60 GHz. We can also obtain the coupling of 3.42 dB, the thru of 3.82 dB from fabricated branch line coupler at 60 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.731-736
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• 2017

In this paper, we report the fabrication of concave surface fiber tips for optical resonators. It was confirmed that the radius of curvature on fiber end can be controlled by introducing the hydrofluoric acid solution and the wavelength of $1.55{\mu}m$ laser which is absorbed well in the etchant to induce the photothermal effect. Using the microscope images, we observed the proposed concave fiber tip fabrication method is effective to make the controllable concave tips. We also observed changes in the size of the beam emitted from the tips with the various radius of curvature using the beam profiler. The authors believe that the proposed method will be applied to resonators for optical communications.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2377-2379
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• 2005

본 논문은 유연한 영상표시 장치에 응용될 수 있는 중공음극방전 소사(hollow cathode discharge device)를 마이크로머시닝기술로 제작하고 시험한 결과를 보여준다. 중공음극방전은 평판음극방전에 비해서 전류밀도가 큰 장점이 있다. 방전 소자는 유연한 구조의 양극과 음극, 그리고 그 사이의 절연층으로 구성되어 있으면 소자의 크기는 $20mm{\times}10mm$이다. 방전이 일어나는 영역은 관통 구멍으로서 $7{\times}11$개가 배열되어 있고, 구멍의 직경은 $70{\mu}m$이다. 실리콘 기판 위에 SU-8 몰드를 형성한 후 니켈 전기도금으로 음극을 제작한다. 그 위에 폴리이미드를 스핀코팅하여 절연층을 이루고, 열증착으로 알루미늄 양극을 제작한 후, 실리콘과 SU-8을 제거하여 방전 소자를 완성한다. 진공챔버내 아르곤 가스 분위기에서 소자의 두 전극 간 전압을 변화시켜 가면서 전류-전압 특성을 측정하였고, 방전상태를 관찰하였다. 챔버 내의 절대압력이 260mmHg이고 인가전압이 230V 정도일 때 안정 방전이 관찰되었다

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.440-445
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• 2012

Contact-type Linear Encoder-like Capacitive Displacement Sensor (CLECDiS) is a novel displacement sensor which has wide measurable range with high resolution. The sensor, however, is very sensitive to relative rotational alignment between stator and mover of the sensor as well as its displacement. In addition to, there can be some disturbances in the relative rotational alignment, so some noises occur in the sensor's output signal by the disturbances. This negative effect of the high sensitivity may become larger as increasing sensitivity. Therefore, this negative effect of the high sensitivity has to be compensated and reduced to achieve nanometer resolution of the sensor. In this study, a new type capacitive linear encoder with a mechanical guide is presented to reduce the relative rotational alignment problem. The presented method is not only to reduce the alignment problem, but also to assemble the sensor to the stage conveniently. The method is based on a new type CLECDiS that has mechanical guide autonomously. In the presented sensor, when the device is fabricated by micro-machining, the guide-rail is also fabricated on the surface of the sensor. By the direct fabrication of the guide-rail with high precision micro-machining, errors of the guide-rail can be reduced significantly. In addition, a manual yaw alignment is not required to obtain large magnitude of the output signal after the assembly of the sensor and the stage. The sensor movement is going to follow the guide-rail automatically. The prototype sensor was fabricated using the presented method, and we verify the feasibility experimentally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.62-67
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• 2012

Owing to the rapid growth of mobile and electronic equipment miniaturization technology, the supply of micro mobile computing machine has been fast raised. Accordingly they have performed many researches on energy harvesting technology to provide promising power supply equipment to substitute existing batteries. In this paper, in order to have low resonance frequency for piezoelectric energy harvester, we have tried to make it larger than before by adopting nickel that has much higher density than silicon. We have applied it for our energy harvesting actuator instead of the existing silicon based actuator. Through such new concept and approach, we have designed energy harvesting device and made it personally by making with micromachining process. The energy harvester structure has a cantilever type and has a dimension of $10{\times}2.5{\times}0.1\;mm^3$ for length, width and thickness respectively. Its electrode type is formed by using Au/Ti of interdigitate d33 mode. The pattern size and gap size is 50 ${\mu}m$. Based on the measurement of the nickel-based piezoelectric energy harvester, it is found to have 778 Hz for a resonant frequency with no proof mass. In that resonance frequency we could get a maximum output power of 76 ${\mu}W$ at 4.8 $M{\Omega}$ being applied with 1 g acceleration.