• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.9
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• pp.2081-2086
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• 2015

The temperature sensor using ring oscillator is designed by 0.18㎛ CMOS process and the supply voltage is 1.5volts. The temperature sensor is designed by using temperature-independent and temperature-dependent ring oscillators and the output frequency of temperature-independent ring oscillator is constant with temperature and the output frequency of temperature-dependent ring oscillator decreases with increasing temperature. To convert the temperature to a digital value the output signal of temperature-independent ring oscillator is used for the clock signal and the output signal of temperature-dependent ring oscillator is used for the enable signal of counter. From HSPICE simulation results, the temperature error is less than form -0.7℃ to 1.0℃ when the operating temperature is varied from -20℃ to 70℃.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.883-884
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• 2015

In this paper, a ring oscillator circuit having controllable output characteristics with temperature is introduced. The ring oscillator can be used in the various system to require temperature measurement. The ring oscillator is comprised of a current source and a number of NOT gates and the bias current of the current source is controlled with temperature.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.6
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• pp.8-15
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• 2003

In this paper, the issue of the differential ring oscillator in designing low phase noise is linearity improvement of delay cell's load resistor. A novel differential delay cell that improves on the Maneatis load is proposed. The linearity improvement of load resistor results in lower phase noise in ring oscillator. For comparison of the phase noise characteristics, Ali Hajimiri's phase noise model is used. In order to have a low ISF(impulse sensitivity function), it is important to have a symmetry between rise time and fall time of oscillation waveform. The ISF value of ing oscillator based on the proposed delay cell is lower than that of the existing ring oscillators. Due to this result, the phase noise is improved by 2~3dBc/Hz for the same power dissipation and oscillation frequency.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.123-126
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• 2002

본 논문에서는 샘플링 위상검파를 이용하여 고안정 마이크로파발진기를 설계하고 3체배시켜 30㎓대의 발진기를 설계하였다. 설계된 발진기는 병렬귀환 유전체공진과, 바랙터 다이오드를 이용하여 전압제어하므로써 자유발진 신호를 안정화 시켰다. 발진기의 저위상/고안정 특성을 위하여 마이크로파 샘플링 위상 검파회로를 이용하여 출력 주파수를 저위상/고안정 특성을 가지게 하였다. 병렬귀환 유전체공진발진기에 의한 마이크로파 샘플링 위상동기발진기는 발진주파수 9.733㎓에서 10.17㏈m의 출력값을 보였으며 3체배된 29.2㎓ 발진기의 위상잡음은 -95㏈c/Hz @10KHz와 -105㏈c/Hz @100KHz의 우수한 특성을 나타내었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.273-279
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}$/4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.369-372
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• 2000

본 논문에서는 P-HEMT Gate-바이어스 튜닝에 의한 위상동기 마이크로파 발진기를 설계하였다. 설계된 유전체 발진기는 병렬궤환공진 형태로서 P-HEMT의 게이트단에서 전압을 제어하여 전압제어발진기 형태로 주파수를 가변시키므로서 안정된 위상동기신호를 나타나도록 하였다. 위상동기방식은 외부에서 제공되는 125㎒의 기준주파수를 SRD로 체배시켜 하모닉 신호를 이용한 마이크로파 샘플링 위상검파 방식으로 설계하였으며, 유전체 발진기의 자유발진신호와 샘플링 신호사이의 위상비교에 의하여 ±1㎒ 범위의 고안정 특성을 갖는 13.25㎓대역의 위상고정 발진기의 동기화와 저 위상잡음을 나타내었다.

• Journal of IKEEE
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• v.25 no.4
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• pp.721-727
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• 2021

This paper proposes a UWB (Ultar-wideband) impulse generator using the gated ring oscillator. The oscillator and PLL circuits which generate a several GHz LO signal for the conventional architecture are replaced with the gated ring oscillator. Therefore, the system complexity is decreased. The proposed architecture controls the duty of enable signal, which is used for the head switch of ring oscillator. The control of the duty enables to tun off the oscillator during the guard interval and stop wasting the power consumption. The pulse shaping method using the counter makes the small side lobe and preserves the bandwidth regardless of the change on the center frequency. Designed UWB impulse generator could change the center frequency from 6.0 GHz to 8.8 GHz with a digital bit control, while it preserves the bandwidth as about 1.5 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.7
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• pp.1538-1543
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed split ring resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}/4$ microstrip resonator. Next, we designed voltage controlled oscillator using proposed split ring resonator with varactor diode. The VCO has 125MHz tuning range from 5.833GHz to 5.845GHz, and phase noise characteristic is -118~-115.5 dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.202-207
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• 2010

In this paper, a novel voltage-controlled oscillator(VCO) using the open loop multiple split ring resonator(OLMSRR) is presented for improving the phase noise, implemented in 130 nm CMOS technology. Compared with the conventional CMOS LC resonator, the proposed CMOS OLMSRR has the larger coupling coefficient value, which makes a higher Q-factor, and has improved the phase noise of the VCO. The proposed CMOS VCO based OLMSRR has the phase noise of -99.67 dBc/Hz @ 1 MHz in the oscillation frequency. Compared with the VCO using the conventional CMOS LC resonator and the proposed VCO using the CMOS OLMSRR structure has been improved in 7 dB. The prototype 24 GHz CMOS VCO is implemented in 130 nm CMOS and occupies a compact die area of $0.7\;mm{\times}0.9\;mm$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.25-34
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• 2010

This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.