• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.3
• /
• pp.31-35
• /
• 2013

TSOP(Thin Small Outline Package) is the IC package using lead frame, which is the type of low cost package for white electronics, auto mobile, desktop PC, and so on. Its performance is not excellent compared to BGA or flip-chip CSP, but it has been used mostly because of low price of TSOP package. However, it has been issued in TSOP package that thermal deflection of lead frame occurs frequently during molding process and Au wire between semiconductor die and pad is debonded. It has been required to solve this problem through substituting materials with low CTE and improving structure of lead frame. We focused on developing the lead frame structure having thermal stability, which was carried out by numerical analysis in this study. Thermal deflection of lead frame in TSOP package was simulated with positions of anti-deflection adhesives, which was ranging 198 um~366 um from semiconductor die. It was definitely understood that thermal deflection of TSOP package with anti-deflection adhesives was improved as 30.738 um in the case of inside(198 um), which was compared to that of the conventional TSOP package. This result is caused by that the anti-deflection adhesives is contributed to restrict thermal expansion of lead frame. Therefore, it is expected that the anti-deflection adhesives can be applied to lead frame packages and enhance their thermal deflection without any change of substitutive materials with low CTE.

• Korean Journal of Materials Research
• /
• v.10 no.8
• /
• pp.551-557
• /
• 2000

Cu-based leadframe sheets were oxidized ic a hot alkaline solution to black-oxide layer on the surface and molded with epoxy molding compound(EMC), and finally machined to form sandwiched double-cantilever beam(SDCB) and sandwiched Brazil-nut(SBN)specimers to measure the adhesion strength of leadframe-EMC interface. The SDCB and the SBN specimens were designed to measure the adhesion strength in terms fracture toughness under puasi-mode I and mixed mode loadinf, respectively. After the tests, fracture surfaces were analyzed paths were observed in the SDCB-tested speciments, failure paths varied with crack speed and loading conditions.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.1-7
• /
• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.135-135
• /
• 2012

세계 환경유해물질 규제에 대응하여 반도체 substrate의 Pb-free solution의 일환으로 등장한 PPF (Pre-Plated Frame)는 패키지공정 조립성은 물론, 자동차 반도체와 같은 고 신뢰성 및 low cost 요구를 만족하기 위해 초박막 고품질의 도금층과 Sub-micro scale의 rough treatment 와 같은 미세 표면제어 기술, 그리고 Au wire로부터 Cu wire 로의 전환에 대응하는 최적화된 도금층 구조로 발전하고 있다. 이러한 기술적인 진화를 거듭해온 이 기술은 다양한 반도체 substrate에 광범위하게 사용될 수 있기 때문에 향후 PPF기술의 활용저변은 더욱 확대될 전망이다.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.679-682
• /
• 2001

An experiment is carried out to investigate the influences of shearing characteristic factors for the process design of lead frame blanking in copper alloy C194(t=0.205mm). 3 process parameters, e.g., clearance between die and punch, strip holding pressure, and bridge allowance are selected for this study. From the basis condition 6% clearance, 20N/$mm^2$, and 1.5t bridge allowance the seven times of experiment are done by varying the each factor. The square shape specimen is used to study the characteristics of shearing factors. The ratios of roll over, burnish, fracture zone are measured after blanking. The experimental analysis shows that the burnish ratio is decreased as the clearance increases. And the larger strip holding pressure is shown that the roll over and burnish ratio are both decreased. It is found that an optimal strip holding pressure is need for large burnish zone. Finally it is shown that the bridge allowance is less affected than clearance and strip holding pressure.

• Korean Journal of Materials Research
• /
• v.7 no.9
• /
• pp.781-788
• /
• 1997

Cu/EMC 계면 접착력에 미치는 산화의 규명하기 위해 리드프레임의 저온 산화에 대하여 조사하였다. 이전의 보고와 달리, 저온에서도 Cu$_{2}$O위에 CuO산화물이 형성되어 Cu/Cu$_{2}$O(NiO)/Cu(NiO)/air의 산화층 구조를 나타내었다. Cu/EMC 계면 접착력은 산화가 진행됨에 따라 산화 초기에 급격히 증가하다 최대값에 이르고, 이후의 계속적인 산화로 감소하는 양상을 보였다. 접착력은 산화 온도나 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류와 무관하게 대략 20nm 와 30nm 사이에 존재하였다. 산화 초기의 접착력 증가는 산화로 인한 EMC에 대한 젖음성의 증가와 기계적 고착 효과의 증가에 기인하였다. 리드프레임과 EMC의 파괴 표면에 대한 AES, XPS 분석으로 부터, 산화막의 두께가 얇을 때에는 Cu$_{2}$O//CuO의 계면 파괴 + EMC 자체 파괴가 복합적으로 발생함을 알 수 있었다. 반면에 과도한 산화로 낮을 접착력을 나타내는 시편은 Cu/Cu$_{2}$/O 계면의 파괴를 나타냈다.

• Journal of the Microelectronics and Packaging Society
• /
• v.5 no.1
• /
• pp.91-100
• /
• 1998

본논문에서는 현재 다 핀용 패키지로 주종을 이루고 있는 기존의 PQEP의 성능을 향상시키기 위하여 스트립 라인 배선 구조를 갖는 새로운 PQEP를 제안하였다. 기존의 208 핀 PQFP와 제안한 208핀 PQFP의 전기적 특성을 Ansoft사의 Maxwell TMA사의 Raphael 과 Avanti사의 HSPICE를 이용하여 시뮬레이션하여 비교하였다. 새로운 패키지에서는 신호 선과 파워버스라인을 스트립 구조로 만들고 감결합커패시터를 장착하여 크로스톡 잡음과 스 위칭 잡음을 크게 감소시켰다. 패키지의 리드프레임을 스트립구조로 만들기 위하여 구리가 도포된 유연성 쿠폰을 리드프레임의양측면에 부착하였다. 신호선의 특성 임피던스는 쿠폰의 유전층 두께변화를 조절함으로써 최적화하였고 유전층 두께가 100$\mu$mdlfEo 45$\Omega$의 값을 얻 었다. 시뮬레이션 결과와 측정결과 32개의 소자가 동시에 스위칭하고 전원/접지핀이 전체 리드 수의 33%일 때 동작주파수가 330Mhz됨을 확인하였으며 이는 기존 PQFP의 최대 동 작주파수인 100MHz에 비하여 3배 이상 향상됨을 보였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2010.05a
• /
• pp.574-576
• /
• 2010

In this paper, we propose a development of high speed inspection system which allows the inspection of width, definition and flaws in lead-frame using CCD camera. This system consists of the parts of lighting, inspection, lighting control, GUI and more and developed techniques used are lighting control, fast inspection algorithm and advanced measurement technique for improvement in resolution. The effectiveness in proposed method is proved by conducting field tests.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.2
• /
• pp.29-32
• /
• 2013

The surface roughness and reflectivity of electroless-plated Sn-3.5 wt%Ag on a LED (light emitting diode) lead frame were investigated. Cu electroplating was carried out prior to electroless plating of Sn-3.5Ag to improve the reflectivity of the Sn-3.5Ag deposit. In order to investigate the effect of stirring speed and temperature of the plating solution, surface roughness and reflectivity was measured. The experimental results revealed that the thickness of the deposit layer increased with stirring speed and temperature of the plating solution. Stirring speed is increased from 100 to 300 rpm, the surface roughness was reduced from 0.513 to 0.266 ${\mu}m$, and the reflectivity increased from 1.67 to 1.84 GAM. As temperature of the plating solution increased from 25 to $45^{\circ}C$, the surface roughness reduced from 0.507 to 0.350 ${\mu}m$, and the reflectivity increased from 1.68 to 1.84 GAM.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2008.04a
• /
• pp.277-280
• /
• 2008

In this paper behavior of U-Channel Bridge (UCB) was studied, and a new analysis model was proposed. Most of the time, permanent and traffic load actions are directly transmitted to main beams located under the carriageway, one of the most distinctive features of UCB is that the edge beams that support the bridge are above the deck, in contrast with a conventional overpass system. In This study models used with the frame elements, the frame and plate elements, and the solid elements were constructed. Assuming that the results of solid models were similar to the real behavior of UCB, results of another models was compared. The results of the models used with the frame and plate elements were similar to the results of solid models, the model used with the frame and plate elements was proposed as an analysis model.