• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.111-111
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• 1998

• Journal of the Korean Magnetics Society
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• v.19 no.5
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• pp.186-190
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• 2009

We investigated the magneto-optical properties and application of diluted magnetic semiconductors Cd$_{1-x}$Mn$_x$Te crystals with various Mn contents grown using a vertical Bridgman method. This material crystallizes in the zinc-blende structure for values of x < 0.82. The band-gap energy was depended on Mn mole fraction x linearly and increased with decreasing temperature. The Faraday rotation was increased as the photon energy increased near to that of the fundamental band gap and its increased with increasing Mn mole fraction. Optical isolator using the Cd$_{0.62}$Mn$_{0.38}$Te crystal shows that the isolation and insertion loss are 45 dB and 0.35 dB at 650 nm, respectively.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.153-156
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• 2008

The objective of the present study is to evaluate the flexural behavior of reinforced concrete columns externally strengthened with wire rope and T-shape steel plate units. Three strengened columns and a control unstrengthened column were tested under cyclic lateral load simultaneously subjected to a constant axial load. All columns had same section size, and the arrangement of longitudinal reinforcement and internal hoop. The spacing of wire rope range from 40 ${\sim}$ 80mm, which corresponds from 1.0 ${\sim}$ 0.5, respectively, times the minium amount of hoop specified in seismic design of ACI 318-05. Test results showed that the proposed unbonded-type strengthening procedure is very effective for improving the flexural ductility of reinforced concrete columns.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.3
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• pp.269-276
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• 2005

Zn, Bi 와 V 금속이온 전구체를 사용하여 모노클리닉 결정구조를 갖는 신규 ZnBiVO4 광촉매를 손쉽게 합성 할 수 있는 방법을 개발하였다. 합성된 $ZnBiVO_4$ 광촉매는 XRD 과 FESEM등을 이용하여 미세구조를 분석하였으며, 분석결과 본 삼성분계 금속산화물 반도체 광촉매는 모노클리닉 결정구조를 갖는 것을 알 수 있었다. 저온 수용액방법에 의해 손쉽게 나노 구조를 갖는 $ZnBiVO_4$가 제조되었으며, 그 광촉매의 최소 입자크기는 20-30 nm 이다. $ZnBiVO_4$ 광촉매는 UV-visible DRS (diffuse reflectance spectroscopy)로 그 띠간격(band gap)을 측정하였으며, FT-IR을 사용하여 구조 및 물질 상의 순도를 확인하였다. 그리고 $H_2S$를 광분해하여 수소를 발생하는($122ml/hr{\cdot}g$) 우수한 광촉매 활성을 보여 주었다.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.595-599
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• 2004

We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

• Journal of the Korean Electrochemical Society
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• v.17 no.1
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• pp.1-6
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• 2014

This review article summarizes photoelectrochemical water splitting using gallium nitride (GaN). GaN materials have been studied as novel photoelectrode material due to its chemical stability and easy band gap engineering. Unlike other semiconductor materials that are easily corroded in strongly acidic or alkaline electrolyte, n-type GaN is chemically stable enough to be used as photoanode in oxygen evolution reaction. Furthermore, studies on p-type GaN have been recently reported. This review briefly discusses problems that need to be solved before GaN materials find widespread use in solar fuel application.

• Clean Technology
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• v.19 no.3
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• pp.191-200
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• 2013

Researches on developing photocatalyst materials for hydrogen production from solar water splitting attract great attentions due to the unlimited and clean characteristics of the solar energy. In this review, photocatalysts used for hydrogen production from the solar water splitting are discussed in terms of material characteristics. In addition, various modification techniques applied to the photocatalysts for improving hydrogen production efficiency are summarized. Finally, light characteristics such as intensity, illumination density and wavelength cutoff are also discussed for the importance of hydrogen production rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.279-283
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• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.213-217
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• 1997

We have measured photoluminescence (PL) and time-resolved PL in doped-GaAs. As increasing doping concentration, the PL spectra of n-type GaAs shift to higher energies while the PL spectra of p-type GaAs shift to lower energies than the bandgap of the undoped GaAs. The contribution of the Burstein-Moss effect overrules the band-gap narrowing in n-type GaAs, contrary to p-type GaAs. The PL rise time and decay time become shorter as increasing doping concentration. The PL rise and decay time in doped-GaAs depend on the type of majority carriers and their concentrations, which imply that the carrier-carrier interaction plays an important role in the energy relaxation processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.