• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.861-868
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• 2017

Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.168-169
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• 2001

1.55 $\mu\textrm{m}$ 파장 대역에서 동작하는 파장가변 단일 주파수 레이저는 WDM 통신 시스템, 광섬유 센서, 분광학 분야에 유용하게 사용될 수 있다. 특히 어븀첨가 광섬유 레이저로 파장가변 단일 주파수 레이저를 구현하면 선폭이 가늘고, 세기 잡음이 작고, 출력 세기가 크다는 장점이 있기 때문에 많은 연구가 있어 왔다. 본 논문에서는 음향광학 대역투과 필터 (acousto-optic tunable bandpass filter, AOTBF)와 광섬유 흡수 격자를 사용하는 선형공진기 형태의 파장가변 단일 주파수 광섬유 레이저에 대해서 제안하고 구현하였다. (중략)

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.64-72
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• 1996

Calculation of the amount of excess arsenic charge has been carried out for the single crystal growth of GaAs with 1-T HB(single temperature zone horizontal Bridgman) method which has no low temperature arsenic zone. Based upon the investigation of the thermochemical properties of the Ga and As system, a general equation for the excess dimension of the ampoule and temperature gradient of the furnace. From this result, a theoretical background of the 1-T HB method has been constructed for the single crystal growth of GaAs.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.141-142
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• 2006

본 논문에서는 단일 FET를 이용하여 900MHz/2.14GHz 이중 대역 고효율 도허티 전력증폭기 설계 구현을 하였다. 이중대역 도허티 전격증폭기의 출력전력은 900MHz 에서 35.91dBm, 2.14GHz에서 35.91 dBm의 출력을 얻었으며, 전력부가효율은 900MHz에서 40.32%, 2.14GHz에서는 40.47%의 효율을 획득 하였다. 또한 본 논문에서 단 하나의 능등소자를 이용하여 최대한의 출력전력을 얻기 위하여 최대 전력정합법을 사용하였으며 그 결과 이중대역 전력증폭기를 구현할 수 있었다.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.168-171
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• 2010

본 논문에서는 GaN HEMT 소자를 이용한 고출력 고효율 특성을 가지는 광대역 SSPA의 개발을 다루고 있다. 개발한 SSPA는 8W 급과 15W 급의 GaN HEMT 소자를 사용하여 Pre-Drive 증폭단을 구성하였으며, Drive 증폭단은 50W/150W급 GaN HEMT 소자를 직/병렬구조로 사용하였다. Main 증폭단은 4-way 분배기와 결합기를 이용한 Balanced Structure를 적용하여 높은 출력을 구현하였으며, 안정적인 동작을 위하여 음(-)전원 제어 회로와 출력신호 검출 회로를 포함하고 있다. 제작된 SSPA의 사용가능 대역은 2.9GHz~3.3GHz로 단일전원을 사용하고 있으며 100us 펄스 폭, 10% Duty Cycle 조건에서 60dB의 전압이득, 1kW 출력과 약 28% 효율 특성을 가지는 것으로 측정되었다. 본 논문에서 개발한 SSPA는 S-대역을 사용하는 레이더시스템의 송신단에 적용될 수 있다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.309-312
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• 2003

본 논문에서는 유전체 기판형태에서 대역통과 여파기의 크기를 줄이며, 감쇄극을 통과대역 양쪽에 적절하게 위치시키어 감쇄특성을 개선시킬 수 있는 구조를 제안한다. 제시된 구조는 일반적인 헤어핀구조와 접지면에 슬롯라인을 구현해주어 2단 대역통과 여파기를 설계하였다. 설계된 대역 여파기의 등가회로를 제시하였고 시뮬레이션 및 측정 결과를 비교하였다. 구현된 여파기는 일반적인 결합선로 여파기에 비해 크기를 크게 줄 일수 있었고, 감쇄특성은 3단 대역통과 여파기의 감쇄특성에 비교할 수 있다. 제시된 구조는 소형화 및 성능개선에 장점을 가지고 있어 다른 소자에도 많은 적용이 가능할 것으로 생각된다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.1 s.104
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• pp.74-80
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• 2006

This paper presents the characteristics of electromagnetic field uniformity in a reverberation chamber that can be used alternatively for the analysis, test and evaluation of electromagnetic interference and immunity. The dual-band diffuser, which can be used at two different frequency bands in a reverberation chamber, is applied, and it is made of two different single-band Schroeder's Quadratic Residue Diffusers. The FDTD method is used to analyze the field characteristics. Compared with single-band diffuser, the dual-band diffuser shows the improvement in not only expansion of test frequency band but also in characteristics of the field uniformity, polarity, power efficiency, and tolerance. Therefore, the reverberation chamber with the dual-band diffuser is a better facility, for the analysis and measurement of electromagnetic interference and immunity, than the reverberation chamber with a single-band diffuser.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.2
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• pp.273-278
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• 2011

This paper has proposed a dual-band transmitter RF Front-end for IMT-Advanced systems which has been implemented in a 0.13-${\mu}m$ CMOS technology. The proposed dual-band transmitter RF Front-End covers 2300~2700 MHz, 3300~3800 MHz frequency ranges which support 802.11, Mobile WiMAX, and IMT-Advanced system. The proposed dual-band transmitter RF Front-End consumes 45 mA from a 1.2 V supply voltage. The performances of the transmitter RF Front-End are verified through post-layout simulations. The simulation results show a +0 dBm output power at 2 GHz band, and +1.3 dBm output power at 3 GHz band.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.2
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• pp.35-44
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• 1995

In this paper, the single E-plane structure which is inserted in the slot of waveguide tube for good yield has been proposed and analyzed by the variational method. A CAD program for designing of the narrow-band waveguide bandpass filters has been developed by the passband correction method with filter synthesis theory. Using the developed CAD program, 0.02dB equi-ripple Chebyshev type 5-section bandpass filter is designed at the center frequency of 3.82GHz, fabricated with tunable structure. The experimental results show good agreements with the theoretical results.

• The Journal of the Korea institute of electronic communication sciences
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• v.4 no.2
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• pp.87-92
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• 2009

In this paper, we designed and fabricated the active amplification block for the integrated antenna module. The fabricated amplification module have a proper gain and low noise figure in the band of AM/FM band, T-DMB band and GPS band, and show good isolation performance for each band. Manufactured circuits satisfied the gain performance 7 dB in AM band, 11 dB in FM band, 10 dB in T-DMB, and 17 dB in GPS band. The integrated amplification block was realized by 35 mm*35 mm size, and was shown as the same sensitivity performance as compared with a conventional reference antennas.