• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.729-736
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• 2011

In this paper, we propose a varactor-diodeless voltage-controlled oscillator operating at X-band, and verify the possibility of applying to a receiver for microwave radar signal detection applications. The proposed VCO is realized by only single RF BJT device as a varactor diode is substitued by a intrinsic collector-base PN-junction of the active device which is used to generate negative resistance. The fabricated VCO meets the specification of the receiver, which has a 11.20~11.75 GHz tuning bandwidth with respect to the tuning voltage, 1.0~7.0 V, output power of 9.0~12.0 dBm and linear frequency tuning performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.472.2-472.2
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• 2014

현재 결정질 실리콘 태양전지의 전 후면 전극의 형성은 스크린 프린팅 방법이 주를 이루고 있다. 스크린 프린팅 방법은 쉽고 빠르게 인쇄가 가능한 반면 단가가 높고 금속 페이스트에 첨가된 여러 혼합물에 의해서 전극과 기판 사이의 저항이 크다는 단점이 있다. 본 논문에서는 도금을 이용하여 태양전지의 전극을 형성한 후 태양전지의 전기적 특성을 비교하였다. 또한 단일반사방지막($SiN_x$) 증착 후 도금을 이용한 전극 형성 시 반사방지막의 pin-hole에 의해 전극 이외의 표면에 도금이 되는 ghost plating 현상이 발생하게 되는데, 이를 방지하기 위해 thermal oxidation을 이용하여 SiO2/SiNx 이중반사 방지막을 증착함으로써 ghost plating을 최소화 시켰다. Ni을 이용하여 전극과 기판 사이의 저항을 낮추었으며, 주요 전극은 Cu 도금을 사용함으로써 단가를 낮추었으며 마지막으로 Cu전극의 산화를 방지하기 위해 Ag을 이용하여 얇게 도금하였다. 실험에 사용된 Si 웨이퍼 특성은 p-형, $156{\times}156mm2$, $200{\mu}m$, $0.5{\sim}3.0{\Omega}{\cdot}cm$ 이다. 웨이퍼는 표면조직화, p-n접합 형성, 반사방지막 코팅을 하였으며 스크린 프린팅 방법을 이용해 후면 전극을 인쇄하고 열처리 과정을 통해 전극을 형성하였다. 이 후 전면에 레이저를 이용해 전극 패턴을 형성한 후 도금을 실행하여 태양전지를 완성하였다. 완성된 태양전지는 솔라 시뮬레이터, QE 및 TLM패턴을 이용하여 전기적 특성을 분석하였으며, SEM과 linescan, 광학현미경 등을 이용하여 전극을 분석하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.19-25
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• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• Clinical and Experimental Pediatrics
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• v.49 no.1
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• pp.34-39
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• 2006

Purpose : The incidence of neonatal hyperbilirubinemia is twice as high in East Asians as in Caucasians. However, its metabolic basis has not been clearly explained. The UDP-glucuronosyltransferase gene(UGT1A1) mutation was found to be a risk factor of neonatal hyperbilirubinemia. We studied whether neonatal hyperbilirubinemia is associated with the 1828G>A(rs 10929303) polymorphism of the UGT1A1 gene, which encodes for a key enzyme of bilirubin metabolism. Methods : The genomic DNA was isolated from 80 Korean full term neonates who had greater than a 12 mg/dL level of serum bilirubin with no obvious cause, and the genomic DNA was also isolated from 164 Korean neonates of the control population. We studied a single nucleotide polymorphism (SNP) of 1828G>A in the untranslated region of the UGT1A1 gene by direct sequencing. Results : Three of the 80 neonates with a serum bilirubin level above 12 mg/dL had homozygous mutations and 10 of the 80 neonates with a serum bilirubin level above 12 mg/dL had heterozygous mutations. Thirteen of the 164 neonates of the control group had homozygous mutations and 16 neonates of the control group had heterozygous mutations. The allele frequency of 1828G>A polymorphism of UGT1A1 in the hyperbilirubinemia group was 10.0 percent, which was not significantly different from the allele frequency of 12.8 percent in the control group. Conclusion : In this study, the 1828G>A polymorphism of the UGT1A1 gene was detected in the Korean neonates with neonatal hyperbilirubinemia. Our results indicated that this SNP is not associated with the prevalence of hyperbilirubinemia in Koreans.

• Journal of Life Science
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• v.31 no.5
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• pp.453-463
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• 2021

Hearing loss is a group of clinically and genetically heterogeneous disorders characterized by congenital- to adult-onset deafness with frequent additional symptoms such as myopathy, nephropathy, and optic disorders. It is commonly divided into two types: syndromic, with no other symptoms, and nonsyndromic, with other symptoms. Autosomal recessive hearing loss is relatively frequent in Pakistan, which may be due in part to frequent consanguineous marriages. This study was performed by whole exome sequencing to determine the genetic causes in two Pakistani consanguineous families with autosomal recessive hearing loss. We identified a pathogenic homozygous variant (p.Leu326Gln in MYO7A) in a family with prelingual-onset hearing loss and two variants of uncertain significance (p.Val3094Ile in GPR98 and p.Asp56Gly in PLA2G6) in a family with early-onset hearing loss concurrent with muscular atrophy. The missense mutations in MYO7A and PLA2G6 were located in the highly conserved sites, and in silico analyses predicted pathogenicity, while the GPR98 mutation was located in the less conserved site, and most in silico analysis programs predicted its nonpathogenic effect. Homozygosity mapping showed that both alleles of the homozygous mutations identified in each family originated from a single founder; spread from this single source might be due to consanguineous marriages. This study will help provide exact molecular diagnosis and treatment for autosomal recessive hearing loss patients in Pakistan.

• Magazine of the Korea Concrete Institute
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• v.6 no.1
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• pp.120-130
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• 1994

The purpose of this study is to propose the analytical model for the hysteretic behavior of Reinforced Concrete bearn-column joints under various loading history. Discrete line elernents , YVith inelastic rotational spring was adopted to consider the movement of plastic hinging zone influenced by the details of longitudinal reinforcements. Also hysteretic model was constructed by excluding such variables which can not be utilized in dynamic analysis of Reinforced Concrete. structure that it will be adoptable in two-dimensional inelastic frame ardysis with 6-DOF. From the analysis of previous test results, it was found that stiffness deterioration caused by inelastic hysteretic loadings can be predicted by the functron of basic pinching coefficients, ductility ratio.and yield strength ratio of members. Strength degradation coefficients were newly proposed to explain the difference of inelastic behavior of members caused by spacing ratio of transverse steel and sectlon aspect ratio. The energy dissipation capacities calculated using the analytical model proposed in thls paper show a good agreements w~lh test results by an error of 10~20%.

• Journal of Plant Biotechnology
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• v.43 no.1
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• pp.12-20
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• 2016

Advances in DNA sequencing technologies have contributed to revolutionary understanding of many fundamental biological processes. With unprecedented cost-effective and high-throughput sequencing, a single laboratory can afford to de novo sequence the whole genome for species of interest. In addition, population genetic studies have been remarkably accelerated by numerous molecular markers identified from unbiased genome-wide sequences of population samples. As sequencing technologies have evolved very rapidly, acquiring appropriate individual plants or populations is a major bottleneck in plant research considering the complex nature of plant genome, such as heterozygosity, repetitiveness, and polyploidy. This challenge could be overcome by the old but effective method known as haploid induction. Haploid plants containing half of their sporophytic chromosomes can be rapidly generated mainly by culturing gametophytic cells such as ovules or pollens. Subsequent chromosome doubling in haploid plants can generate stable doubled haploid (DH) with perfect homozygosity. Here, classical methodology to generate and identify haploid plants or DH are summarized. In addition, haploid induction by epigenetic regulation of centromeric histone is explained. Furthermore, the utilization of haploid plant in the genomics era is discussed in the aspect of genome sequencing project and population genetic studies.

• Journal of Ginseng Research
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• v.23 no.3 s.55
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• pp.130-134
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• 1999

Somatic embryos were induced directly from cotyledon explants of Korean ginseng (Panax ginseng C.A. Meyer) on Murashige and Skoog (MS) medium with 2,4-D, BAP, kinetin or lacking growth regulators. When somatic embryos formed on all media grew to cotyledonary stage, the further development of embryos was ceased and remained in white color. By gibberellic acid (over 1.0 mg/1 $GA_3$) treatment, all the somatic embryos turned rapidly to green and germinated within 3 weeks. Chilling treatment also induced the germination of somatic embryos. The effective temperature regime was $-2^{\circ}C$ for over 8 weeks but more higher temperature than $0^{\circ}C$ did not effective for germination of somatic embryos. Ultrastructural observation revealed that the cotyledon cells of somatic embryos without chilling or $GA_3$ treatment contained numerous lipid reserves, dense cytoplasm, proplastids and non-activated mitochondria with poorly differentiated internal structure, but the cotyledon cells of germinating somatic embryos after chilling or $GA_3$ treatment highly vacuolated and contained well-developed chloroplasts and active state of mitochondria enclosing numerous cristae. The above results indicate that in vitro developed somatic embryos of Panax ginseng may be dormant after mature similar to zygotic embryos.

• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.499-503
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• 2019

Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.304-310
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• 2002

Novel charge trap type memory devices with reoxidized oxynitride gate dielectrics made by NO annealing and reoxidation process of initial oxide on substrate have been fabricated using 0.35 $\mu \textrm{m}$ retrograde twin well CMOS process. The feasibility for application as NVSM memory device and characteristics of traps have been investigated. For the fabrication of gate dielectric, initial oxide layer was grown by wet oxidation at $800^{\circ}C$ and it was reoxidized by wet oxidation at $800^{\circ}C$ after NO annealing to form the nitride layer for charge trap region for 30 minutes at $850^{\circ}C$. The programming conditions are possible in 11 V, 500 $\mu \textrm{s}$ for program and -13 V, 1ms for erase operation. The maximum memory window is 2.28 V. The retention is over 20 years in program state and about 28 hours in erase state, and the endurance is over $3 \times 10^3$P/E cycles. The lateral distributions of interface trap density and memory trap density have been determined by the single junction charge pumping technique. The maximum interface trap density and memory trap density are $4.5 \times 10^{10} \textrm{cm}^2$ and $3.7\times 10^{18}/\textrm{cm}^3$ respectively. After $10^3$ P/E cycles, interlace trap density increases to $2.3\times 10^{12} \textrm{cm}^2$ but memory charges decreases.