• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.22.2-22.2
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• 2007

• 대한방사선방어학회:학술대회논문집
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• 2011.11a
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• pp.156-157
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• 2011

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.259-259
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• 2005

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.204-210
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• 2003

Electron magnetic resonance (EMR) of paramagnetic Cr$^{3+}$, Mn$^{2+}$, and Fe$^{3+}$ impurity ions in ferroelectric LiNbO$_3$ and LiTaO$_3$ single crystals has been studied. The actual sites location of paramagnetic impurity ions in the crystals was suggested from the experimental results and zero field splitting parameters calculated by superposition model. It turns out that Cr$^{3+}$ ions in LiNbO$_3$ crystal have two resonance centers and enter both the Li$^{+}$ and Nb$^{5+}$ ions. Mn$^{2+}$ and Fe$^{3+}$ impurity ions in LiNbO$_3$ substitute for Nb$^{5+}$ ions. However, both Cr$^{3+}$ and Fe$^{3+}$ ions in LiTaO$_3$ crystal reside at Li$^{+}$ ions.$ +/ ions.+/ ions.

• Journal of radiological science and technology
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• v.28 no.1
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• pp.1-7
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• 2005

High-quality single crystals of pure $Li_2B_4O_7$ as well as $Li_2B_4O_7$ doped with Cu, Mn and Mg impurities (1.0mol%, respectively) have been grown from the melt of $Li_2CO_3+2B_2O_3$ by Czochralski method in platinum crucibles. To study the thermoluminescent properties, $Li_2B_4O_7$ series single crystal TLDs were made by cutting in the size of $4{\times}5{\times}1\;mm^3$. The glow curves show two or three peaks which can be easily deconvoluted. It is observed that room temperature($20{\sim}30^{\circ}C$) fadings of the dosimetric peaks of $Li_2B_4O_7$ series single crystal TLDs were about 10 % for 30 days. The relative photon energy response for $Li_2B_4O_7$ series single crystal TLDs were about 85 % when the responses were normalized to that measured with $^{60}Co\;(1.25\;MeV)\;{\gamma}-rays$. The measured data are in a good agreement with theoretical ones. The $Li_2B_4O_7$ series single crystal TLDs fabricated in this work can be used for monitoring personal and environmental radioactivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.1-6
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• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.108-115
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• 2011

Principles in the synthesis of small-sized high-quality crystals for the experimental condensed matter physics will be discussed in this paper. Synthesis process and cautions will be introduced especially for the synthesis methods which can be easily accessible to researchers. Starting from the solid state reaction which is the most common synthesis method, I will explain the quartz tube sealing that is crucial for making polycrystalline materials as well as single crystals in various conditions. Finally, basics of single crystal growth and various techniques will be introduced on the whole for the researchers who are not familiar with the material synthesis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.279-283
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• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.