• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.597-600
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• 1999

By periodically varying the current density and etching time during anodic oxidation of crustalline silicon wafers in 15% HF-ethanol solution, we obtained porous silicon multilayers which have periodically varying refractive index. We fabricated the porous silicon microcavity (PSM) which consist of porous silicon multilayers (I), active layer of porous silicon, and porous silicon multilayers (II) and investigated its physical properties. The AFM (Atomic Force Microscope) measurement from the cross section of multilayers (I and II) shows uniformity of high refractive index and low index layers as well as the active layer. We observed the characteristics of Bragg reflector when the thickness of layers was 1/4 and the thickness of active layer was twice of the effective wavelength, which can be used as a filter for specific wavelength. We found the emission characteristic from the PSM, which FWHM (full width half maximum) was considerably decreased and emission intensity was increased.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.21-26
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• 1981

SnO2/n-Si and ITO/n-Si SIS solar cells have been fabricated ty mears of electron-beam deposition. The optimum oxidation and heat-treatment condition for SnO2/n-Si cells and ITO/n-Si cells are 50$0^{\circ}C$-5min., 30$0^{\circ}C$-10min., and 50$0^{\circ}C$-5min., 30$0^{\circ}C$-20min. respectively. The open-circuit Voltage(Voc), short-circuit current density(Jsc), fill factor(FF), and efficiency (η) under AMI(100mW/$\textrm{cm}^2$) illumination were 0.4V, 34mA/$\textrm{cm}^2$, 0.44, and 6.0%(active area efficiency, 6.9%) for SnO2/n-Si solar cells, and 0.44V, 36mA/$\textrm{cm}^2$, 0.53, and 8.45%(active area efficiency, 9.71%) for ITO/n-Si solar calls.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.97-103
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• 1999

Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.429-433
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• 2014

In this study, the morphology and the x-ray quantum efficient of mercury oxide (HgO) and lead oxide (PbO) sensors derived by particle sedimentation method were discussed. In the pursuit of this purpose, we investigated the electrical characteristics and the x-ray quantum efficiency of various thicknesses of HgO and PbO films in mammographic x-ray energy. We have therefore developed a particle-in-binder sedimentation method of fabricating large area polycrystalline films onto transparent glass substrates coated with indium tin oxide. We are currently optimizing the growth method to improve the quantum efficiency with the ultimate goal of obtaining as quantum efficiency close to that of single crystal performance. Our future efforts will concentrate on optimization of large area film growth techniques specifically for deposition on a-Si:H flat panel readout arrays.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.73-82
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• 1998

In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and $CH_{3}OH$ vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthdsilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced striction and residual product.

• Analytical Science and Technology
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• v.6 no.2
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• pp.149-156
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• 1993

The formation of the graphite spherulites has been studied experimentally in the Ni-C liquid under high pressure and temperature. In the diamond-stable region the graphite spherulites were formed and grew stably. They were not the polycrystalline particles but the single crystals of the fullerene-type, respectively, grown spirally with much imperfection. And they were proved to be in a mixture state of carbon atoms with $sp^2$- and $sp^3$-bonding by an Auger electron spectroscope and a high resolution transmission electron microscope. As the pressure decreased from the diamond-stable region to the graphite-stable region, the shape of the graphite particles changed gradually from the sphere to the flaky shape. The formation of the graphite spherulites was attributed to the stable existence of the carbon atoms with $sp^3$ bonding in the diamond-stable region. The formation of the large fullerene-type graphite spherulites with much imperfection is well agreed with Kroto's prediction for growth of the giant fullerene.

• Journal of Powder Materials
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• v.25 no.2
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• pp.104-108
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• 2018

Grain-growth behavior in the $95Na_{1/2}Bi_{1/2}TiO_3-5BaTiO_3$ (mole fraction, NBT-5BT) system has been investigated with the addition of $Na_2CO_3$. When $Na_2CO_3$ is added to NBT-5BT, the growth rate is higher than desired and grains are already impinging each other during the initial stage of sintering. The grain size decreases as the sintering temperature increases. With the addition of $Na_2CO_3$, a liquid phase infiltrates the interfaces between grains during sintering. The interface structure can be changed to be more faceted and the interface migration rate can increase due to fast material transport through the liquid phase. As the sintering temperature increases, the impingement of abnormal grains increases because the number of abnormal grains increases. Therefore, the average grain size of abnormal grains can be decreased as the temperature increases. The phenomenon can provide evidence that grain coarsening in NBT-5BT with addition of $Na_2CO_3$ is governed by the growth of facet planes, which would occur via mixed control.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.14-26
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• 1995

The growth mechanism of diamond thin films, deposited by Hot Filament CVD, was investigated through observation of changes in their surface morphology as a function of the substance temperature and deposition time. Amorphous carbon or DLC thin films were deposited at low substrate temperature. Diamond films consisting of square-shaped particles, whose surfaces are (100) planes, were deposited at an intermedate temperature. At high substrate temperatures, diamond films consisting of the particles showing both (100) and (111) plane were deposited. The (100) proferred orientation of the diamond films are believed to be due to a relatively high supersaturation during deposition, and the growth condition for the diamond films having (100) preferred orientation can be applied to the single crystal growth since no twins are generated on the (100) plane. The grain size of the diamond films did not change with increasing temperature and its increasing rate with increasing deposition time was the same irrespective of the substrate temperature. However, the nucleation density increased with substrate temperature and its increasing rate with deposition time was much higher for the films deposited at higher substrate temperature.

• Korean Journal of Breeding Science
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• v.40 no.2
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• pp.201-205
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• 2008

'Morningpurple' is a new sweetpotato variety developed by Mokpo Experiment Station, National Institute of Crop Science (NICS), RDA in 2007, for flowering. This variety was selected from the cross between Sinchunmi and Hi-dry in 2004, seedling and line selections were practiced from 2005 to 2006. 'Morningpurple' has morning glory type flowers with purple color. It has triangular leaf, green with purple vine and petiole, elliptic storage root, red skin and yellow flesh color of storage root. The average yield of storage root was 15.0 ton/ha. Number of storage roots over 50 gram per plant was 2.6, and the average weight of storage root was 143 gram.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.180-189
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• 2021

N-Heteroaryl carbazoles were synthesized with thermal heating in the presence of Cu(I) catalyst and used as main ligands for the preparation of heteroleptic Ir(III) complexes. In these Ir(III) complexes, 6-membered ring structures of Ir-ligand chelation were found by single crystal X-ray diffraction. The blue shift of photoluminescence for Ir(III) complexes was observed in the case of the strong bond formation between Ir and ancillary ligands. It also has been clearly shown that the higher electron density of heteroaryl aromatic ring influenced shorter maximum photoluminescence wavelength (λmax) of Ir(III) complexes. Since the new Ir(III) complexes showed good phosphorescent emission, they could be potentially used as OLED materials in the emission Layer.