• 제목/요약/키워드: 단결정실리콘

검색결과 266건 처리시간 0.05초

저가.고효율 단결정 실리콘 태양전지의 제조 (Fabrication of Low cost, High Efficiency Single Crystal Silicon Solar Cells)

  • 이규정;김인식;남효진;박철
    • 전자공학회논문지A
    • /
    • 제31A권7호
    • /
    • pp.102-109
    • /
    • 1994
  • Low cost high efficiency single crystal silicon solar cells for terrestrial applications have been fabricated by using inexpensive materials such as solar grade silicon wafer and pastes, and mass production processes such as screen printing and spray. Under 100 mW/cm$^2$ (AM 1.5) and $25^{\circ}C$ conditions conversion efficiency of 16.48% was obtained by anon fire-thru process and 15.55% by fire-thru process.

  • PDF

전기점성유체를 이용한 단결정 실리콘의 초정밀 연마에 관한 연구 (A Study on the Ultraprecision Polishing of Single Crystal Silicon using Electrorheolgical Fluids.)

  • 박성준;이성재;김욱배;이상조
    • 한국정밀공학회지
    • /
    • 제20권6호
    • /
    • pp.27-36
    • /
    • 2003
  • The Electro-Rheological (ER) fluid has been used to the ultraprecision polishing of single crystal silicon as new polishing slurry whose properties such as yield stress and particle structure changed with the application of an electric field. In this work, it is aimed to find the effective parameters in the ER fluid on material removal in the polishing system whose structure is similar to that of the simple hydrodynamic bearing. The generated pressure in the gap between a moving wall and a workpiece, as well as the electric field-induced stress of the mixture of ER fluid-abrasives, is evaluated experimentally, and their influence on the polishing of single crystal silicon is analyzed. Moreover, the behavior of abrasive and ER particles is described.

단결정 및 다결정 실리콘 압력센서의 온도특성 비교 (Comparison of Temperature Characteristics Between Single and Poly-crystalline Silicon Pressure Sensor)

  • 박성준;박세광
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
    • /
    • pp.342-344
    • /
    • 1995
  • Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

  • PDF

단결정 실리콘 성장기를 위한 퍼지 제어기 구성 및 적용 (Fuzzy Controller Design and Its Application to MCZ Crystal Grower)

  • 김광대;한형석
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 제어로봇시스템학회 2000년도 제15차 학술회의논문집
    • /
    • pp.71-71
    • /
    • 2000
  • In this paper, the fuzzy system is applied to MCZ Crystal Grower using at industrial field. The existing controller, which is PID controller, has a fixed gain and as a result of it it can not have an adaptive control function against the error or disturbance. Hence, the machine operator should always check the process status and when the error is occurred, the quality and the productivity may be decreased by each personal capability. In order to remove this drawback, a fuzzy control system which is known to be adaptive and flexible is applied to the machine. After applying the fuzzy system, and compared with the existing system, the diameter deviation and the defects were decreased. we proved the possibility of application fuzzy system to single silicon crystal grower.

  • PDF

긴 시간지연을 갖는 단결정 실리콘 성장기(Crystal Grower - FF CZ150)의 자동 직경 제어 시스템 (Automatic Diameter Control System with Long Time-Delay for Crystal Grower (FF - CZ150))

  • 박종식;김종훈;양승현;이석원
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2002년도 하계학술대회 논문집 D
    • /
    • pp.2089-2092
    • /
    • 2002
  • The PID controller have the simple structure and show the comparatively good control performance. Crystal Grower(FF-CZ150) melt polycrystalline silicon at the temperature of about 1450$^{\circ}C$, then grow it into a single crystalline ingot. The automatic diameter control system of the Crystal Grower has a good performance with only PD control. But it contain the integrator in the plant which has a long time delay. In this paper, we show the secondary approximate model and applies time delay controller which has good performance for the plant with long time delay. It will be able to improve the response characteristic against a standard input and a load disturbance.

  • PDF

단결정 실리콘 TFT 제작을 위한 SLS 공정 (Sequential Lateral Solidification Process for Fabrication of Crystalline Silicon Thin Film Transistor)

  • 이윤재;박정호
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
    • /
    • pp.461-463
    • /
    • 2000
  • This paper presents a low temperature excimer-laser-crystallization that produces directionally solidified microstructure in Si thin films. The process involves (1) a complete melting of selected area via irradiation through a patterned mask. and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the superlateral growth(SLG) distance. (3) lateral growth extended over a number of iterative steps. Grains that grow continuously to the vertical direction were demonstrated. We discuss sequential lateral solidification principle, experiment.

  • PDF

초크랄스키 실리콘 단결정에서 인상 속도의 거시적 변동이 OSF-링 형성에 미치는 영향 (Effect of a Macroscopic Fluctuation in Pulling Rate on the Formation of OSF-ring Cz-Si SIngle Crystal)

  • 박봉모;서경호;김건
    • 한국결정학회지
    • /
    • 제11권3호
    • /
    • pp.157-161
    • /
    • 2000
  • In a 200nm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced an then the variations of the pulling rate and the position of OSF-ring were compared each other. The formation behavior of OSF-ring in the effective volume, defined as the region between the growth interface position -α and the growth interface position +α, is most affected by the pulling rate fluctuation. To understand the correct effect of a macroscopic pulling rate fluctuation, its cumulative effect in the effective volume should be considered. A new concept of modeling for it was proposed here.

  • PDF

SiNx의 band gap 차이를 이용한 MIS 소자의 메모리 특성 (The characteristics of MIS devices using difference between various band gap of the SiNx)

  • 손혁주;정성욱;장경수;김경해;이준신
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.197-198
    • /
    • 2008
  • 이 논문에서는 다양한 SiNx의 band gap을 이용하여 MIS 구조의 메모리 소자를 제작하고 이를 분석하였다. SiNx 박막은 증착 가스비에 따라 다양한 band gap을 가지게 된다. 본 실험에서는 $SiH_4$ 가스와 $NH_3$ 가스를 사용하여 SiNx 박막을 증착하였다. n-type 단결정 실리콘 기판위에 다양한 가스비에 따라 단일 SiNx 박막을 증착 및 분석하였고, 이를 이용하여 NNN 구조의 MIS 소자를 제작하였다. 제작된 소자는 4.6 V의 hysteresis roof 폭과 1000 초 후에 84.8 %의 retention 값을 갖는 우수한 메모리 특성을 보였다.

  • PDF

단결정 실리콘 태양전지 최적 운전조건을 위한 전기적 특성 분석 (Analysis of Electrical Properties for Optimal Operating Conditions of Mono-crystalline Si Solar Cell)

  • 김지웅;최용성;이경섭;조수영;황종선
    • 한국전기전자재료학회논문지
    • /
    • 제24권8호
    • /
    • pp.654-658
    • /
    • 2011
  • This paper was investigated the electrical properties for optimal operating conditions of monocrystalline silicon solar cell. The output of electricity for monocrystalline solar cell was investigated according to the distances between solar cell and halogen lamp and to the resistances by the variable resistor.

단결정, 다결정 실리콘 태양전지의 전기적 특성 분석 (Analysis of Electrical Characteristics for Single Crystalline and Poly-crystalline Solar Cell)

  • 홍창우;최용성;이경섭;조수영
    • 한국전기전자재료학회논문지
    • /
    • 제24권9호
    • /
    • pp.744-749
    • /
    • 2011
  • Recently, annual usage of energy is dramatically increasing because industrialization is going faster and more electricity is needed due to various electronic devices. This study focused on the performance characteristics of solar cell using the impedance technique. The experiment measured an impedance according to frequency's from 2 mHz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The imaginary part was changed from capacitance component to inductance component.