• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.504-508
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• 2019

The feasibility of replacing the tope cell of pn GaInP homojunction with our GaInP/AlGaInP heterojunction structure in III-V semiconductor multijunction photovoltaic (MJPV) cells having the highest current conversion efficiency was investigated. The performance of photovoltaic (PV) cells grown on $2^{\circ}$ and $10^{\circ}$ off-oriented GaAs substrates were compared to each other. The PV cells on the $10^{\circ}$ off-cut substrate showed higher short-circuit current density ($J_{sc}$) and conversion efficiency values than that of using the $2^{\circ}$ one. For $2{\times}2mm^2$ area PV cell on $10^{\circ}$ off substrate, the $J_{sc}$ of $9.21mA/cm^2$ and the open-circuit voltage of 1.38 V were measured under 1 sun illumination. For $5{\times}5mm^2$ cell on $10^{\circ}$ off substrate, the conversion efficiency was decreased from 6.03% (1 sun) to 5.28% (20 sun) due to a decrease in fiill factor (FF).

• Journal of Advanced Navigation Technology
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• v.23 no.5
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• pp.430-436
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• 2019

It is needed to develop an antenna with features of subminiature, light weight and multi-band operation for the variaty services in maritime and industrial fields. The PCB pattern antenna is one of the appropreiate antennas solving these requirements. In this research, the design and fabrication of the PCB pattern antenna operating on the single band of 920 MHz are investigated. The final goal is that the development of the dual band PCB pattern antenna operating on 260 MHz and 920 MHz, which is based on the proposed antenna. It is evident that the performance in the frequencies of 902 MHz, 915 MHz and 928 MHz among of 920 MHz ISM band is better than that in other frequencies. It is also confirmed that the differences of the voltage standing wave ratio, return loss, gain and efficiency between three frequencies are less than 5%. It is expected that the development of communication link of 5-10 km is possible when the induced results are applied into the low power wide area (LPWA) network desinged by the rule of -30 dB sensitivity.

• Journal of Advanced Navigation Technology
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• v.27 no.2
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• pp.203-208
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• 2023

In this study, we propose a method to improve the precision of contact resistance measurement circuits using constant current method and voltage drop method, and implement a dashboard that monitors the measured data of contact resistance measurement systems through MQTT broker server. The contact resistance measurement system measures the resistance value and transmits the measured value to the MQTT broker server using wireless communications. This developed dashboard uses Node-RED and Node-RED-Dashboard to receive the resistance values of up to four contact resistance measurement systems and show them to user's monitor screen. Users can manage multiple measurement data using a single dashboard and easily interface with other devices through the MQTT broker server. Through the experimental results from real data measurements, the relative standard deviation about precision is improved to average 40.37% and maximum 64.73% respectively.

• Journal of Advanced Navigation Technology
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• v.28 no.2
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• pp.232-237
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• 2024

In this paper, a broadband double dipole quasi-Yagi antenna using a 4×2 meander line array structure for maintaining 8 dBi gain was studied. The 4×2 meanderline array structure consists of a unit cell in the shape of a meanderline conductor, and it was placed above the second dipole antenna of the double dipole quasi-Yagi antenna. A double dipole quasi-Yagi antenna with generally used multiple strip directors was designed on an FR4 substrate with the same size, and the input reflection coefficient and gain characteristics were compared. Comparison results showed that the impedance frequency bandwidth increased by 6.3% compared to when using the multiple strip directors, the frequency bandwidth with a gain of 8 dBi or more increased by 10.1%, and average gain also slightly increased. The frequency band of the fabricated antenna for a voltage standing wave ratio less than 2 was 1.548-2.846 GHz(59.1%), and gain was measured to be more than 8 dBi in the 1.6-2.8 GHz band.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.21-31
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• 2010

This paper presents a design of PLL and SSCG for reducing the EMI effect at the electronic machinery and tools for DisplayPort application. This system is composed of the essential element of PLL and Charge-Pump2 and Reference Clock Divider to implement the SSCG operation. In this paper, 270MHz/162MHz dual-mode PLL that can provide 10-phase and 1.35GHz/810MHz PLL that can reduce the jitter are designed for 2.7Gbps/162Gbps DisplayPort application. The jitter can be reduced drastically by combining 270MHz/162MHz PLL with 2-stage 5 to 1 serializer and 1.35GHz PLL with 2 to 1 serializer. This paper propose the frequency divider topology which can share the divider between modes and guarantee the 50% duty ratio. And, the output current mismatch can be reduced by using the proposed charge-pump topology. It is implemented using 0.13 um CMOS process and die areas of 270MHz/162MHz PLL and 1.35GHz/810MHz PLL are $650um\;{\times}\;500um$ and $600um\;{\times}\;500um$, respectively. The VCO tuning range of 270 MHz/162 MHz PLL is 330 MHz and the phase noise is -114 dBc/Hz at 1 MHz offset. The measured SSCG down spread amplitude is 0.5% and modulation frequency is 31kHz. The total power consumption is 48mW.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.3
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• pp.699-707
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• 2016

This paper proposes a low-complexity central processing unit (CPU) that is suitable for deeply embedded systems, including Internet of things (IoT) applications. The core features a 16-bit instruction set architecture (ISA) that leads to high code density, as well as a multicycle architecture with a counter-based control unit and adder sharing that lead to a small hardware area. A co-processor, instruction cache, AMBA bus, internal SRAM, external memory, on-chip debugger (OCD), and peripheral I/Os are placed around the core to make a system-on-a-chip (SoC) platform. This platform is based on a modified Harvard architecture to facilitate memory access by reducing the number of access clock cycles. The SoC platform and CPU were simulated and verified at the C and the assembly levels, and FPGA prototyping with integrated logic analysis was carried out. The CPU was synthesized at the ASIC front-end gate netlist level using a $0.18{\mu}m$ digital CMOS technology with 1.8V supply, resulting in a gate count of merely 7700 at a 50MHz clock speed. The SoC platform was embedded in an FPGA on a miniature board and applied to deeply embedded IoT applications.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.55-63
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• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.288-293
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• 2011

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.