• The KIPS Transactions:PartA
• /
• v.15A no.5
• /
• pp.243-248
• /
• 2008

This paper proposes a low-power carry look-ahead adder using multi-threshold voltage CMOS. The designed adder is compared with conventional CMOS adder. The propagation delay time is reduced by using low-threshold voltage transistor in the critical path. Also, the power consumption is reduced by using high-threshold voltage transistor in the shortest path. The other logic block is implemented with normal-threshold transistor. Comparing with the conventional CMOS circuit, the proposed circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.142-142
• /
• 2012

최근 반도체 산업의 발전과 동시에 소자의 집적화에 따른 단채널 효과가 문제되고 있다. 채널 영역에 대한 게이트 영역의 제어능력이 떨어지면서 누설전류의 증가, 문턱전압의 변화가 발생하며, 이를 개선하기 위해 이중게이트 혹은 다중게이트 구조의 트랜지스터가 제안되었다. 하지만 채널길이가 수십나노미터 영역으로 줄어듦에 따라 소스/드레인과 채널간의 접합형성이 어렵고, 고온에서 열처리 과정을 거칠 경우 채널의 유효길이를 제어하기 힘들어진다. 최근에 제안된 Junctionless 트랜지스터의 경우, 소스/드레인과 채널간의 접합이 없기 때문에 접합형성 시 발생하는 공정상의 문제뿐만 아니라 누설전류영역을 개선하며, 기존의 CMOS 공정과 호환되는 이점이 있다. 한편, 집적화되는 반도체 기술에 따라, 동작 시 발생하는 스트레스가 소자의 신뢰성에 중요한 요인으로 작용하게 되며, 현재 Junctionless 트랜지스터의 신뢰성 특성에 관한 연구가 부족한 상황이다. 따라서, 본 연구에서는 Junctionless 트랜지스터의 NBTI 특성과 hot carrier effect에 의한 신뢰성 특성을 분석하였다. Junctionless 트랜지스터의 경우, 축적모드로 동작하기 때문에 스트레스에 의해 유기되는 캐리어의 에너지가 낮다. 그 결과, 반전모드로 동작하는 Junction type의 트랜지스터에 비해 스트레스에 의한 subthreshold swing 기울기의 열화와 문턱전압의 이동이 감소하였다. 또한 소스/드레인과 채널간의 접합이 없기 때문에 hot carrier effect에 의한 게이트 절연막 및 계면에서의 열화가 개선되었다.

• Journal of IKEEE
• /
• v.7 no.2 s.13
• /
• pp.135-143
• /
• 2003

This paper describes the design techniques of the data converters for Multiple-Valued Logic(MVL). A 3.3V low power 4 digit CMOS analog to quaternary converter (AQC) and quaternary to analog converter (QAC) mainly designed with the neuron MOS down literal circuit block has been introduced. The neuron MOS down literal architecture allows the designed AQC and QAC to accept analog and 4 level voltage inputs, and enables the proposed circuits to have the multi-threshold properity. Low power consumption of the AQC and QAC are achieved by utilizing the proposed architecture.

• Journal of IKEEE
• /
• v.8 no.2 s.15
• /
• pp.172-180
• /
• 2004

In this paper, a parallel Input/Output modulo multiplier, which is applied to AOTP(All One or Two Polynomials) multiplicative algorithm over $GF(3^m)$, has been proposed using neuron-MOS Down-literal circuit on voltage mode. The three-valued input of the proposed multiplier is modulated by using neuron-MOS Down-literal circuit and the multiplication and Addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard $0.35{\mu}m$CMOS N-well doubly-poly four-metal technology and a single +3V supply voltage. In the simulation result, the multiplier shows 4 uW power consumption and 3 MHzsampling rate and maintains output voltage level in ${\pm}0.1V$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.2 s.332
• /
• pp.31-40
• /
• 2005

The Multi-Threshold CMOS (MTCMOS) technology provides a solution to the high performance and low power design requirements of mobile computing applications. In this paper, we (i) motivate the post-mask-tooling performance enhancement technique combined with the MTCMOS leakage current suppression technology, and (ii) develop a practical MTCMOS ASIC design methodology which fine-tunes and integrates best-in-class techniques and commercially available tools to fix the new design issues related to the MTCMOS technology. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um Process. The fabricated PDA processor operates at 333MHz which has been improved about $23\%$ at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.10
• /
• pp.77-83
• /
• 2004

In low-power VLSI systems, it is effective to suppress leakage current by shutting down megablocks in idle states. Recently, multi-threshold voltage CMOS (MTCMOS) is widely accepted to shutdown power supply. However, it requires short wake-up time as operating frequency increases. This causes large current surge during wake-up process, and it often leads to system malfunction due to severe Power line noise. In this paper, a novel wake-up scheme is proposed to solve this problem. It exploits pipelined wake-up strategy in several stages that reduces maximum current on the power line and its corresponding power line noise. To evaluate its efficiency, the proposed scheme was applied to a multiplier block in the Compact Flash memory controller chip. Power line noise in shutdown and wake-up process was simulated and analyzed. From the simulation results, the proposed scheme was proven to greatly reduce the power line noise compared with conventional schemes.