• Title/Summary/Keyword: 다이오드

Search Result 2,341, Processing Time 0.034 seconds

Dosimetric Characteristics of Edge $Detector^{TM}$ in Small Beam Dosimetry (소조사면 선량 계측을 위한 엣지검출기의 특성 분석)

  • Chang, Kyung-Hwan;Lee, Bo-Ram;Kim, You-Hyun;Choi, Kyoung-Sik;Lee, Jung-Seok;Park, Byung-Moon;Bae, Yong-Ki;Hong, Se-Mie;Lee, Jeong-Woo
    • Progress in Medical Physics
    • /
    • v.20 no.4
    • /
    • pp.191-198
    • /
    • 2009
  • In this study, we evaluated an edge detector for small-beam dosimetry. We measured the dose linearity, dose rate dependence, output factor, beam profiles, and percentage depth dose using an edge detector (Model 1118 Edge) for 6-MV photon beams at different field sizes and depths. The obtained values were compared with those obtained using a standard volume ionization chamber (CC13) and photon diode detector (PFD). The dose linearity results for the three detectors showed good agreement within 1%. The edge detector had the best linearity of ${\pm}0.08%$. The edge detector and PFD showed little dose rate dependency throughout the range of 100~600 MU/min, while CC13 showed a significant discrepancy of approximately -5% at 100 MU/min. The output factors of the three detectors showed good agreement within 1% for the tested field sizes. However, the output factor of CC13 compared to the other two detectors had a maximum difference of 21% for small field sizes (${\sim}4{\times}4\;cm^2$). When analyzing the 20~80% penumbra, the penumbra measured using CC13 was approximately two times wider than that using the edge detector for all field sizes. The width measured using PFD was approximately 30% wider for all field sizes. Compared to the edge detector, the 10~90% penumbras measured using the CC13 and PFD were approximately 55% and 19% wider, respectively. The full width at half maximum (FWHM) of the edge detector was close to the real field size, while the other two detectors measured values that were 8~10% greater for all field sizes. Percentage depth doses measured by the three detectors corresponded to each other for small beams. Based on the results, we consider the edge detector as an appropriate small-beam detector, while CC13 and PFD can lead to some errors when used for small beam fields under $4{\times}4\;cm^2$.

  • PDF

Studies on LED Wavelength to Enhance Growth and Bio-active Compounds of Carrots (당근의 성장과 생리활성물질 함량을 증진시키는 LED 파장에 관한 연구)

  • Kang, Suna;Kim, Min-Jung;Kim, Bong Soo;Park, Sunmin
    • Journal of Applied Biological Chemistry
    • /
    • v.58 no.2
    • /
    • pp.131-137
    • /
    • 2015
  • Commercial greenhouse plant factories are highly efficient for controlling external factors such as floods, drought, insects, air pollution etc. However, they require substantial startup & maintenance investments and experimental research to optimize production. These facilities are especially useful for urban farming where high efficiency in small spaces is required. In this study, we investigated whether light emitting diode (LED) lights with mixed dominant wavelengths (650 nm : 550 nm : 445 nm=8:1:1, 650 nm : 445 nm=6:4) can increase the growth rate and bio-active compound content of carrots in comparison to that of fluorescent light (FL). LED with mixed wavelength (650 nm : 550 nm : 445 nm=8:1:1) increased the total weight and root circumference of carrots compared to FL. However, ${\beta}$-carotene contents were not significant in LED (650 nm : 550 nm : 445 nm=8:1:1). However, LED (650 nm : 445 nm=6:4) increased the ${\beta}$-carotene (FL: 7.27, LED: 10.48 mg/g ${\beta}$-carotene dried weight). These results suggested that using LED light at the ideal wavelength, at the antithesis color of the plant, might enhance plant growth and bio-active compound contents.

Suppression of misfit dislocations in heavily boron-doped silicon layers for micro-machining (마이크로 머시닝을 위한 고농도로 붕소가 도핑된 실리콘 층의 부정합 전위의 억제)

  • 이호준;김하수;한철희;김충기
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.33A no.2
    • /
    • pp.96-113
    • /
    • 1996
  • It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

  • PDF

Growth and Flowering of Standard Chrysanthemums according to the Light Source and Light Quality in Night Break Treatment (광중단 처리에 있어서 광원 및 광질이 스탠다드 국화의 생육 및 개화에 미치는 영향)

  • Kwon, Young Soon;You, Bong Sik;Jung, Jae A;Park, Sang Kun;Shin, Hak Ki;Kil, Mi Jung
    • Journal of Bio-Environment Control
    • /
    • v.23 no.4
    • /
    • pp.263-268
    • /
    • 2014
  • This research was performed to investigate the effect of light source and light quality in night break treatment on the growth and flowering of standard chrysanthemum. It was processed 4 hours (22:00-02:00) night break using LED 590, 610, 630, 660, 680nm and fluorescent lamp (mixed light of 480+540+610nm) in standard chrysanthemum 'Baekma' and 'Jinba' for 40 days from transplanting. The days to flower budding from short-day treatment of 'Baekma' were the longgest at fluorescent treatment (21.3 days) and were the shorttest at LED 590nm treatment (15.8 days) among all treatments. The days to flower budding from short-day treatment of 'Jinba' was longger with 18.0 days, 17.8 days, and 17.7 days at the fluorescent, LED 610nm, and 660nm treatments. And it was the shortest with 15.1 days in LED 590nm treatment. Similarly, the days to flowering from short-day treatment of 'Baekma' was the longgest with 56.9 days at fluorescent treatment, and was the shorttest in 51.6 days about LED 590 nm treatment. The days to flowering from short-day treatment of 'Jinba' was longer at fluorescent (56.0 days) and LED 660nm (56.7 days) treatments and was shortest at LED 590nm (52.9 days) among all treatments. Therefore, inhibition of flower bud initiation and flowering were the most effective under fluorescent treatment in case of 'Baekma', and fluorescent and LED 660nm treatments in case of 'Jinba'. The length and weight of cut flower of 'Baekma' and 'Jinba' were most excellent in fluorescent treatment in which the floral differentiation suppression effect was the best. Consequently, as to the growth and flowering of standard chrysanthemum, the treatment which was suitable as the light source and light quality for night break is regarded as the fluorescent lamp, and also under LED 660nm up to a certain level.

Evaluation of 3DVH Software for the Patient Dose Analysis in TomoTherapy (토모테라피 환자 치료 선량 분석을 위한 3DVH 프로그램 평가)

  • Song, Ju-Young;Kim, Yong-Hyeob;Jeong, Jae-Uk;Yoon, Mee Sun;Ahn, Sung-Ja;Chung, Woong-Ki;Nam, Taek-Keun
    • Progress in Medical Physics
    • /
    • v.26 no.4
    • /
    • pp.201-207
    • /
    • 2015
  • The new function of 3DVH software for dose calculation inside the patient undergoing TomoTherapy treatment by applying the measured data obtained by ArcCHECK was recently released. In this study, the dosimetric accuracy of 3DVH for the TomoTherapy DQA process was evaluated by the comparison of measured dose distribution with the dose calculated using 3DVH. The 2D diode detector array MapCHECK phantom was used for the TomoTherapy planning of virtual patient and for the measurement of the compared dose. The average pass rate of gamma evaluation between the measured dose in the MapCHECK phantom and the recalculated dose in 3DVH was $92.6{\pm}3.5%$, and the error was greater than the average pass rate, $99.0{\pm}1.2%$, in the gamma evaluation results with the dose calculated in TomoTherapy planning system. The error was also greater than that in the gamma evaluation results in the RapidArc analysis, which showed the average pass rate of $99.3{\pm}0.9%$. The evaluated accuracy of 3DVH software for TomoTherapy DQA process in this study seemed to have some uncertainty for the clinical use. It is recommended to perform a proper analysis before using the 3DVH software for dose recalculation of the patient in the TomoTherapy DQA process considering the initial application stage in clinical use.

The Output Factor of Small Field in Multileaf Collimator of 6 MV Photon Beams (다엽제한기 소조사면의 6 MV 광자선 출력선량계수)

  • Lee, Ho Joon;Choi, Tae-Jin;Oh, Young Kee;Jeun, Kyung Soo;Lee, Yong Hee;Kim, Jin Hee;Kim, Ok Bae;Oh, Se An;Kim, Sung Kyu;Ye, Ji Woon
    • Progress in Medical Physics
    • /
    • v.25 no.1
    • /
    • pp.15-22
    • /
    • 2014
  • The IMRT is proper implement to get high dose deliver to tumor as its shape and selective approach in radiation therapy. Since the IMRT is performed as modulated the radiation fluence by the MLC created the open shapes and its irradiation time, the dose of segment of radiation field effects on the cumulated portal dose. The accurate output factor of small and step shape of segment is important to improve the determination of deliver tumor dose as it is directly proportional to dose. This experiment performed with the 6 MV photon beam of Clinac Ex(Varian) from $3{\times}3cm^2$ to $0.5{\times}0.5cm^2$ small field size for collimator jaw in MLC free and/or for MLC open field in fixed collimator jaw $10{\times}10cm^2$ using the CC01 ion chamber, SFD diode, diamond detector and X-Omat film dosimetry. As results of normalized to the reference field of $10{\times}10cm^2$ of MLC, the output factor of $3{\times}3cm^2$ showed $0.899{\pm}0.0106$, $0.855{\pm}0.0106$ for $2{\times}2cm^2$, $0.764{\pm}0.0082$ for $1{\times}1cm^2$ and $0.602{\pm}0.0399$ for $0.5{\times}0.5cm^2$. The output factor of MLC open field has shown a maximum 3.8% higher than that of the collimator jaw open field.

Optimization of Soldering Process of Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.7Cu-1.6Bi-0.2In Alloys for Solar Combiner Junction Box Module (태양광 접속함 정션박스 모듈 적용을 위한 Sn-3.0Ag-0.5Cu 및 Sn-1.0Ag-0.7Cu-1.6Bi-0.2In 솔더링의 공정최적화)

  • Lee, Byung-Suk;Oh, Chul-Min;Kwak, Hyun;Kim, Tae-Woo;Yun, Heui-Bog;Yoon, Jeong-Won
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.25 no.3
    • /
    • pp.13-19
    • /
    • 2018
  • The soldering property of Pb-containing solder(Sn-Pb) and Pb-free solders(Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.7Cu-1.6Bi-0.2In) for solar combiner box module was compared. The solar combiner box module was composed of voltage and current detecting modules, diode modules, and other modules. In this study, solder paste printability, printing shape inspection, solder joint property, X-ray inspection, and shear force measurements were conducted. For optimization of Pb-free soldering process, step 1 and 2 were divided. In the step 1 process, the printability of Pb-containing and Pb-free solder alloys were estimated by using printing inspector. Then, the relationship between void percentages and shear force has been estimated. Overall, the property of Pb-containing solder was better than two Pb-free solders. In the step 2 process, the property of reflow soldering for the Pb-free solders was evaluated with different reflow peak temperatures. As the peak temperature of the reflow process gradually increased, the void percentage decreased by 2 to 4%, but the shear force did not significantly depend on the reflow peak temperature by a deviation of about 0.5 kgf. Among different surface finishes on PCB, ENIG surface finish was better than OSP and Pb-free solder surface finishes in terms of shear force. In the thermal shock reliability test of the solar combiner box module with a Pb-free solder and OSP surface finish, the change rate of electrical property of the module was almost unchanged within a 0.3% range and the module had a relatively good electrical property after 500 thermal shock cycles.

Post-harvest LED and UV-B Irradiation Enhance Antioxidant Properties of Asparagus Spears (수확 후 LED와 UV-B 조사에 의한 아스파라거스 순의 항산화 기능 향상)

  • Yoo, Nam-Hee;Jung, Sun-Kyun;Lee, Chong Ae;Choi, Dong-Geun;Yun, Song Joong
    • Horticultural Science & Technology
    • /
    • v.35 no.2
    • /
    • pp.188-198
    • /
    • 2017
  • Asparagus (Asparagus officinalis L.) spears were treated with white (color temperature 4,500 k), blue (peak 450 nm), and red (peak 660 nm) light-emitting diodes (LEDs) at a photosynthetic photon flux density (PPFD) of $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for 12 h, and UV-B (280 nm) at 0.5 kJ or 1.0 kJ to determine the effect on agronomic characteristics, antioxidant phytochemicals, and antioxidant activity. The fresh weight, length, and width of spears were not affected by light quality treatments. The free sugars and chlorophyll contents were increased by 9 and 41%, respectively in the UV-0.5 kJ treatments. Among the antioxidant phytochemicals (vitamin C, total phenol, rutin, and total flavonoid), vitamin C was most greatly affected by the light treatments. Vitamin C content was significantly increased in asparagus spears subjected to the white (114%), red (137%), and UV-0.5 kJ(127%) treatments compared to the control. By contrast, rutin, total phenol, and total flavonoid content were increased only in samples subjected to the red and UV-0.5 kJ treatment. Furthermore, antioxidant activity, as measured by DPPH (2,2-diphenyl-1-picrylhydrazyl) radical scavenging activity, increased in white, red, and UV-0.5 kJ treatments by about 43, 41, and 43%, respectively, compared to the control. These results suggest that postharvest treatment of asparagus spears with red light at $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for 12 h or with UV-B (280 nm) at 0.5 kJ could enhance the functional quality of the asparagus spears by increasing the content of phytochemicals like vitamin C, rutin, total phenolics, and total flavonoids.

Characterization of InAs Quantum Dots in InGaAsP Quantum Well Grown by MOCVD for 1.55 ${\mu}m$

  • Choe, Jang-Hui;Han, Won-Seok;Song, Jeong-Ho;Lee, Dong-Han
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.134-135
    • /
    • 2011
  • 양자점은 전자와 양공을 3차원으로 속박 시키므로 기존의 bulk나 양자우물보다 양자점을 이용한 레이저 다이오드의 경우 낮은 문턱 전류, 높은 미분이득 및 온도 안전성의 장점이 있을 거라 기대되고 있다. 그러나, 양자점은 낮은 areal coverage 때문에 높은 속박효율을 얻지 못하고 있다. 이러한 양자점의 문제점을 해결하기 위해 양자점을 양자우물 안에 성장시켜 운반자들의 포획을 향상시키는 방법들이 연구되고 있다. 양자우물 안에 양자점을 넣으면 양자우물이 운반자들의 포획을 증가 시키고, 열적 방출도 억제하여 온도 안정성이 향상 되는 것으로 알려져 있다. 광통신 대역의 1.3 ${\mu}m$ 경우, GaAs계를 이용하여 InAs 양자점을 strained InGaAs 박막을 우물층으로 한 dot-in-a-well 구조의 연구는 몇몇 보고된 바 있다. 그러나 InP계를 사용하는 1.55 ${\mu}m$ 대역에서 dot-in-a-well구조의 연구는 아직 미미하다. 본 연구에서는 유기 금속 화학 증착법(metal organic chemical vapor deposition)을 이용하여 InP 기판 위에 InAs 양자점을 자발성장법으로 성장하였으며 dot-in-a-well 구조에서 우물층으로 1.35 ${\mu}m$ 파장의 $In_{0.69}Ga_{0.31}As_{0.67}P_{0.33}$ (1.35Q)를, 장벽층으로는 1.1 ${\mu}m$ 파장의 $In_{0.85}Ga_{0.15}As_{0.32}P_{0.68}$(1.1Q)를 사용하였다. 양자우물층과 장벽층은 모두 InP 기판과 격자가 일치하는 조건으로 성장하였다. III족 원료로는 trimethylindium (TMI)와 trimethylgalium (TMGa)을 사용하였으며 V족 원료 가스로는 $PH_3$ 100%, $AsH_3$ 100%를, carrier gas로는 $H_2$를 사용하였다. InP buffer층의 성장 온도는 640$^{\circ}C$이며 양자점 성장 온도는 520$^{\circ}C$이다. 양자점 형성은 원자력간 현미경(Atomic force microscopy)를 이용하여 확인하였으며, 박막의 결정성은 쌍결정 회절분석(Double crystal x-ray deffractometry)를 이용하여 확인하였다. 확인된 성장 조건을 이용하여 양자점 시료를 성장하였으며 광여기분광법(Photoluminescence)을 이용하여 광특성을 분석하였다. Fig. 1은 dot in a barrier 와 dot-in-a-well 시료의 성장구조이다. Fig. 1(a)는 일반적인 dot-in-a-barrier 구조로 InP buffer층을 성장하고 1.1Q를 100 nm 성장한 후 양자점을 성장하였다. 그 후 1.1Q 100 nm와 InP 100 nm로 capping하였다. Fig. 1(b)는 dot-in-a-well 구조로 InP buffer층을 성장하고 1.1Q를 100 nm 성장 후 1.35Q 우물층을 4 nm 성장하였다. 그 위에 InAs 양자점을 성장하였다. 그 후에 1.35Q 우물층을 4 nm 성장하고 1.1Q 100 nm와 InP 100 nm로 capping하였다. Fig. 2는 dot-in-a-barrier 시료와 dot-in-a-well 시료의 상온 PL data이다. Dot-in-a-barrier 시료의 PL 파장은 1544 nm이며 반치폭은 79.70 meV이다. Dot-in-a-well 시료의 파장은 1546 nm이며 반치폭은 70.80 meV이다. 두 시료의 PL 파장 변화는 없으며, 반치폭은 dot-in-a-well 시료가 8.9 meV 감소하였다. Dot-in-a-well 시료의 PL peak 강도는 57% 증가하였으며 적분강도(integration intensity)는 45%가 증가하였다. PL 데이터에서 높은 에너지의 반치폭 변화는 없으며 낮은 에너지의 반치폭은 8 meV 감소하였다. 적분강도 증가에서 dot-in-a-well 구조가 dot-in-a-barrier 구조보다 전자-양공의 재결합이 증가한다는 것을 알 수 있으며, 반치폭 변화로부터 특히 높은 에너지를 갖는 작은 양자점에서의 재결합이 증가 된 것을 알 수 있다. 이는 양자우물이 장벽보다 전자-양공의 구속력을 증가시키기 때문에 양자점에 전자와 양공의 공급을 증가시키기 때문이다. 따라서 낮은 에너지를 가지는 양자점을 모두 채우고 높은 에너지를 가지는 양자점까지 채우게 되므로, 높은 에너지를 가지는 양자점에서의 전자-양공 재결합이 증가되었기 때문이다. 뿐만 아니라 파장 변화 없이 PL peak 강도와 적분강도가 증가하고 낮은 에너지 쪽의 반치폭이 감소한 것으로부터 에너지가 낮은 양자점보다는 에너지가 높은 양자점에서의 전자-양공 재결합율이 급증하였음을 알 수 있다. 우리는 이와 같은 연구에서 InP계를 이용해 1.55 ${\mu}m$에서도 dot in a well구조를 성장 하여 더 좋은 특성을 낼 수 있으며 앞으로 많은 연구가 필요할 것이라 생각한다.

  • PDF

Optical Characteristic on the Growth of Centric Diatom, Skeletonema costatum (Grev.) Cleve Isolated from Jinhae Bay in Korea (진해만에서 분리한 중심목 규조류 Skeletonema costatum(Grev.) Cleve의 성장에 미치는 광학적 특성)

  • Oh, Seok-Jin;Kang, In-Seok;Yoon, Yang-Ho;Yang, Han-Soeb
    • Korean Journal of Environmental Biology
    • /
    • v.26 no.2
    • /
    • pp.57-65
    • /
    • 2008
  • The effects of light quality and irradiance on the growth of centric diatom, Skeletonema costatum (Jinhae Bay strain) were investigated in the laboratory. At 20$^{\circ}C$ and 30 psu, the irradiance-growth curve showed the maximum growth rate of 1.17 day$^{-1}$ with half-saturation photon flux density (PFD) (K$_s$) of 92.4 $\mu$mol photons $m^{-2}s^{-1}$, $\mu$=1.17 (I-5.28)/(I+81.8), (r=0.98), and a compensation PFD (I$_0$) was 5.28 $\mu$mol photons $m^{-2}s^{-1}$. The 10 equated to a depth of 3$\sim$5 m from March to May, 11 m in June and 4 m from July to September in Jinhae Bay. These responses suggested that irradiance at the depth near the surface layer in Jinhae Bay would provide favorable conditions for S. costatum. To assess the effects of light (i.e. wavelengths) on the growth, nine wave-lengths were used ranging from near ultraviolet to near-infrared supplied by light emitting diode. At an irradiance level of 25 $\mu$mol photons $m^{-2}s^{-1}$, S. costatum grew under wavelengths of 405, 470, 505, 525, 568 and 644 nm, but did not grow at 590 and 623 nm; whereas S. costatum grew at all wavelengths at 100 $\mu$mol photons $m^{-2}s^{-1}$. This implies that S. costatum is likely to grow well in enclosed water bodies where suspended particles absorbs most of the blue wavelengths, and dominated by yellow-orange wavelengths.