• 제목/요약/키워드: 다공성 실리콘

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DBR PSi/Polymer Composite Materials -Dual Photonic Characteristics (DBR 다공성 실리콘/고분자 Composite 재료-이중적 광학특성)

  • Park, Cheol-Young;Jang, Seung-Hyun;Kim, Ji-Hoon;Park, Jae-Hyun;Koh, Young-Dae;Kim, Sung-Jin;Ko, Young-Chun;Sohn, Hong-Lae
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.221-226
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    • 2007
  • DBR (distributed Bragg reflectors) PSi (porous silicon) composite films displaying dual optical properties, both optical reflectivity and photoluminescence had been developed. DBR PSi samples were prepared by electrochemical etch of heavily doped $p^{++}-type$ silicon wafers (boron doped, polished on the <100> face, resistivity of $0.8-1.2m{\Omega}-cm$, Siltronix, Inc.). Free-standing DBR PSi films were treated with PMMA (polymethyl methacrylate) to produce flexible, stable composite materials in which the PSi matrix is covered with PMMA containing photoluminescent polysiloles. Optical characteristics of DBR PSi/polysilole-impregnated PMMA composite materials exhibit both their photonic reflectivity at 565 nm and photoluminescence at 510 nm, simultaneously. A possible application of this materials will be discussed.

Electrochemical Etching of Silicon in Porous Silicon Layer Transfer Process for Thin Film Solar Cell Fabrication (초박형 태양전지의 Porous Si Layer Transfer 기술 적용을 위한 전기화학적 실리콘 에칭)

  • Lee, Ju-Young;Han, Wone-Keun;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.55-60
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    • 2009
  • Porous silicon film is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. Effects of Si type, Si resistivity, ultrasonic frequency, current density and etching time on surface morphology of PS film were studied. Electrochemical etching in ultrasonic bath promotes the uniformity of porous layer of Si. Frequency of ultrasonic was increased from 40 kHz to 130 kHz to obtain uniform pores on the Si surface. When current density was higher, the sizes of pores were larger. The new etching cell using back contact metal and current shield help to overcome nonhomogeneity and current crowding effect, and then leads to fabricate uniform pores on the Si surface. The distribution of pore size shows no notable tendency with etching time.

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Development of Porous Silicon Electro-osmotic Pumps for High Flow Rate Per Current Flow Delivery of Organic Solvents (단위전류당 고유량 유기용매 이송을 위한 다공성 실리콘막 전기침투 펌프의 개발)

  • Kwon, Kil-Sung;Kim, Dae-Joong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.2
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    • pp.105-111
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    • 2010
  • Two types of electro-osmotic pumps were prepared: with anodized and DRIE porous silicon. The pump performance was characterized for both types in terms of flow rate and flow rate per current using organic solvents. Both types of electro-osmotic pumps showed a better performance compared to porous glass electro-osmotic pumps. The DRIE porous silicon electro-osmotic pump especially demonstrated an excellent flow rate and flow rate per current performance. The DRIE porous silicon electro-osmotic pump is expected to help in the development of electro-osmotic pumps and micropumps in general due to the recently widespread availability of DRIE processes.

Optimization of Electrochemical Etching Parameters in Porous Silicon Layer Transfer Process for Thin Film Solar Cell (초박형 태양전지 제작에 Porous Silicon Layer Transfer기술 적용을 위한 전기화학적 실리콘 에칭 조건 최적화에 관한 연구)

  • Lee, Ju-Young;Koo, Yeon-Soo;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.23-27
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    • 2011
  • Fabrication of porous silicon(PS) double layer by electrochemical etching is the first step in process of ultrathin solar cell using PS layer transfer process. The porosity of the porous silicon layer can be controlled by regulating the formation parameters such as current density and HF concentration. PS layer is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. For electrochemical etching, highly boron doped (100) oriented monocrystalline Si substrates was used. Ths resistivity of silicon is $0.01-0.02\;{\Omega}{\cdot}cm$. The solution composition for electrochemical etching was HF (40%) : $C_2H_5OH$(99 %) : $H_2O$ = 1 : 1 : 2 (by volume). In order to fabricate porous silicon double layer, current density was switched. By switching current density from low to high level, a high-porosity layer was fabricated beneath a low-porosity layer. Etching time affects only the depth of porous silicon layer.

A Study on Characteristics of Light Emitting Diode with Porous Silicon (다공성 실리콘을 이용한 LED의 발광 특성에 관한 연구)

  • Lee Sung-Hoon;Lee Chi-Woo
    • Journal of the Korean Electrochemical Society
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    • v.3 no.1
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    • pp.39-43
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    • 2000
  • The light emitting diode (LED) was fabricated from n-type porous silicon. We investigated both the current-voltage characteristics of the LED with various electrode materials and changes of electroluminescence with applied current density. Also we probed changes in electroluminescence as a function of operation time at a given current. In order to Improve the contact area between the electrode material and porous silicon layer, we deposited indium on porous silicon layer by electroplating and investigated the electric characteristics of the LED and changes of electroluminescence.

Porous Silicon Urea Sensor with Conductive Polymer Matrix (전도성 고분자를 이용한 다공성 실리콘 요소센서)

  • Jin, Joon-Hyung;Hong, Suk-In;Min, Nam-Ki
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1788-1790
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    • 2000
  • 본 논문에서는 마이크로 바이오 센서에 응용하기 위한 기초 실험으로서 다공성 실리콘을 이용한 요소 센서의 특성을 고찰하였다. 센서의 감도나 내구성 측면에서 보면 전도성 고분자를 전기중합(electropolymerization)한 후 효소를 전착(electrodeposition)하여 고정화하는 것보다는 PSi 표면에 효소를 코팅한 후 그 위에 고분자를 전기 중합하는 것이 유리하였다. SEM 이미지와 EDX 스펙트럼 분석 결과로부터 urease와 polypyrrole(PPy)이 다공질 실리콘 표면에 코팅되었음을 알 수 있었으며, 요소 농도가 1mM$\sim$1M 영역(일반적인 혈중 요소 농도는 $20{\mu}M{\sim}30{\mu}M$)에서 감도는 $30{\mu}A/decade$ 였다.

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Asymmetric Flows for Porous Silicon Electroosmotic Pumps (다공성 실리콘막을 포함한 전기침투 방식 펌프에서의 비대칭적 인 유동)

  • Kim, Dae-Joong;Santiago, Juan G.
    • 한국전산유체공학회:학술대회논문집
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    • 2008.03b
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    • pp.703-704
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    • 2008
  • We fabricated and tested porous silicon-based electroosmotic pumps. Compared to other pumping media, porous silicon is beneficial for obtaining comparable flow rates with much lowered electric potential, while maintaining enough mechanical properties. We fabricated porous silicon with two sided-reactive etching processes. We found higher flow rate per electric potential (consistent with previous studies) and we also found asymmetric flow rates for different pumping directions. We plan to utilize this asymmetry for AC pumping applications.

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Electrochemical Characteristics of Silicon/Carbon Anode Materials using Petroleum Pitch (석유계 피치를 사용한 실리콘/탄소 음극소재의 전기화학적 특성)

  • Lee, Su Hyeon;Lee, Jong Dae
    • Korean Chemical Engineering Research
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    • v.56 no.4
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    • pp.561-567
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    • 2018
  • In this study, the electrochemical characteristics of Silicon/Carbon anode materials were analyzed to improve the cycle stability of silicon as an anode materials of lithium ion battery. Porous silicon was prepared from TEOS by the $st{\ddot{o}}ber$ method and the magnesiothermic reduction method. Silicon/Carbon anode materials were synthesized by varying the mass ratio between porous silicon and pitch. Physical properties of the prepared Silicon/Carbon anode materials were analyzed by XRD and TGA. Also the electrochemical performances of Silicon/Carbon anode materials were investigated by constant current charge/discharge, rate performance, cyclic voltammetry and electrochemical impedance tests in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC : DEC = 1 : 1 vol%). The Silicon/Carbon anode composite (silicon : carbon = 5 : 95 in weight) has better capacity (453 mAh/g) than those of other composition cells. The cycle performance has an excellent capacity retention from 2nd cycle to 30th cycle.

Preparation and Optical Characterization of DBR/Host Dual Porous Silicon Containing DBR and Host Structures (DBR 다공성 실리콘과 Host 다공성 실리콘으로 이루어진 이중 다공성 실리콘의 제조와 광학적 특성)

  • Choi, Tae-Eun;Yang, Jinseok;Um, Sungyong;Jin, Sunghoon;Cho, Bomin;Cho, Sungdong;Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.3 no.2
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    • pp.78-83
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    • 2010
  • DBR/Host dual porous silicons containing DBR and host structure were prepared and their optical properties were characterized using Ocean Optics spectrometer. In this dual porous silicon, single porous silicon layer was used as host layer for possible biomolecule and drug materials and DBR porous silicon layer was used for signal transduction due to the recognition of molecules. Optical reflection spectrum of dual porous silicon displayed only DBR reflection but Fabry-Perot fringe pattern. DBR reflection band of dual porous silicon shifted to the shorter wavelength as the etching time of host layer increased. Cross-sectional FE-SEM image of dual porous silicon displayed a thickness of about 20 micrometer for DBR porous silicon layer. Developed etching technology could be useful to prepare DBR porous silicon which exhibited specific reflection resonance at the required wavelength and to provide an label-free biosensors and drug delivery materials.