• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.155-160
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• 2002

In this paper, a controller design for brushless linear motor is implemented. The designed controller is mainly composed of current, speed and position controller, which are carried out by the high-speed digital signal processor (DSP). In addition the PWM inverter is controlled by space voltage PWM method. This system is implemented by using 32-bit DSP (TMS320C31), a high-integrated logic device (EPM7192), and IPM (Intelligent Power Module) for compact and powerful system design. The experimental results show the effective performance of controller for the brushless linear motor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.167-169
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• 2001

In this paper, a controller design for high speed and stiffness linear motor is implemented. The designed controller is mainly composed of speed and current controller, which are carried out by the high-speed digital signal processor(DSP). In addition the PWM inverter is controlled by space voltage PWM method. This system is implemented by using 32-bit DSP(TMS320C31), a high-integrated logic device(EPM7128), and IPM(Intelligent Power Module) for compact and powerful system design. The experimental results show the effective performance of controller for high speed and stiffness linear motor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.1
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• pp.13-15
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• 2004

The current driven in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure play a significant role and degrade the device performance. These other resistances need to be less than 15％ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.4
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• pp.7-13
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• 1978

This paper is concerned with the realization of sequential machines using shift-register modules as their memory elements. Other methods were to select shift-registers under the specific conditions and didn't consider the complexity of combinational circuits driving them. By using an integer valued function, all shift-registers with minimum length could be selected and an optimum assignment with lowest complexity could be obtained by comparing the number of input lines of combinational logic circuits driving them.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.200-204
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• 2006

본 연구에서는 새로 고안된 NOT-AND 논리에 의한 방전 논리 gate PDP의 입력 DC 방전특성에 대해 고찰하고 동작특성을 해석하였다. 새로 고안된 방전 AND gate는 방전 경로에 따른 전극사이의 전위차의 변화로 AND 출력을 유도한다. 이러한 방전 논리 소자를 가지는 PDP에서는 직류방전이 논리게이트의 역할을 한다. 실험결과 이 DC 입력방전을 위해 priming 방전을 인가한 경우가 인가하지 않은 경우에 비해 방전지연시간이 1/3로 단축되며 방전개시전압은 1/2로 감소하였다. 또한 이 priming 방전은 방전종료후 $30{\mu}s$ 정도까지 영향을 미친다. 그리고 이 직류방전의 시간적, 위치적 방전특성을 측정한 결과, 방전에 따른 시간적 거리의 변화는 상당한 영향을 미치나 인접 전극들의 위치적인 영향은 거의 미미하다는 결론을 얻었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.4
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• pp.1-6
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• 1975

본 논문은 Platen동작제어에 의한 한글델레타이프외 세가지 제어논리회로를 설계검토하였다. 일반적인 논리회로 구성방법에 의한 설계결과, 상태, 상태변이함수 그리고 출력함수외 순서로 설계한 Pulse mode의 제어회로가 가장 간단하였다. 이때 필요한 기억소자는 D Flip-Flop 2회 뿐이었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.4
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• pp.1.1-11
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• 1974

A general and systematic method of organizing two-dimensional flexible cellular array which is capable of reclizing arbitrary combinational switching function is developed. A set of n functions of n variables is transformed to revalued functions of one variable. This set of functions form a semigroup under the normal operation which is defined in this paper. A systematic method of generating any functions using three base functions is presented. Three basic networks which are capable of realizing three base functions are designed using only one one-dimensional array. The algorithm is presented for lealizing arbitrary combinational switching functions by organizing this basic array in two.dimensional cellular array and by appropriately setting the parameters or the edge of the array.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.420-424
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• 1999

In this paper, an optical switching circuit and several types of all-optical transmitter/receiver circuits which are configured with photodiodes, multiple quantum-well(MQW) optical modulators, and field-effect transistors(FETs) were simulated using PSPICE and their results of these are examined and discussed. 20 $\mu\textrm{m}$ ${\times}$ 20 $\mu\textrm{m}$ of window size was used for the optical modulators and 100 $\mu\textrm{m}$ wide FETs with the transconductance value of 55 mS/mm were used for the simulations. Simulation results clearly show that in order for the high speed operation of the all-optical circuits, the size of each device should be minimized to reduce the parasitic capacitance, the circuits should be designed to operate at the wavelength where the resposivity of photodiodes becomes the maximum peak, and the use of short, high-intensity input optical signal beams is very advantageous.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.556-558
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• 2007

We used an elcosanoic acid material and the material was very famous as an thin film bio and insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett (LB) technique and a subphase was a $CdCl_2$ solution as a $2\times10^{-4}mol/l$. Also, we used a bottom electrode as an $Al/Al_2O_3$ and a top electrode as a Al. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This results were analyzed regarding various mechanisms.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.172-173
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• 2002

스핀전자소자 연구 분야의 가장 큰 관심은 전하와 스핀의 자유도를 동시에 고려하여 메모리 및 논리용 트랜지스터를 구현하려는데 있다. 스핀 분극 된 전자를 자성금속으로부터 상자성 및 절연체를 이용하여 또 다른 자성체 및 반도체, 초전도체에 주입하는 일 (Spin injection)에 관한 연구가 일부 진행되어 왔다. 두 개의 자성 금속 사이에 Au등의 상자성 금속을 끼워 넣는 구조로 한쪽의 자성금속을 스핀 소스로 사용하여 상자성 금속에 스핀을 주입하고 다른 쪽의 자성금속으로 주입된 스핀을 검출하는 스핀 스위치 저장소자로서의 양극 스핀 트랜지스터 (bipolar spin transistor)를 많은 연구소에서 제조 연구하였다. (중략)