• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.16 no.6
• /
• pp.130-136
• /
• 2002

A novel ozonizer has been developed using a high frequency surface discharge and a high purity Ti-Si-Al ceramic catalyst as its dielectric component. A cylindrical thin compound ceramic catalyst in reactor is adhered to inside of the film-like outside electrode. And, when experiment condition are oxygen gas temperature of 20 ［$^{\circ}C$］, inner reactor pressure of 1.6 atm 600［Hz］ and flow late of 2［l/min］. the ozonizer can easily produce ozone concentration(50～60［g/㎥］for oxygen) and power efficiency(180［g/kWh］for oxygen) without using a special enrichment means. At 2［l/min］, 20［$^{\circ}C$］, 1.6［atm］, 600［Hz］and 40［W］, the result of simulation to gas temperature of reactor using general code Phoenics, the maximum temperature of reactor was 132［$^{\circ}C$］in reactor. Ant the result electric field simulation of Ti-Si-Al type reactor using general code Flux 2D, maximum electric field was 0.131E.08［V/m］.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.71-71
• /
• 2000

본 연구에서는 차세대 마이크로파 유전체 소자로서의 응용을 목적으로 펄스 레이저 방식에 의하여 증착된 MgTiO3 박막의 전기적 특성을 종합적으로 연구 분석하였다. 이를 바탕으로 MgTiO3 박막의 유전손실 등과 같은 열화를 야기시키는 박막 내부 또는 박막과 기판간의 결함의 특성을 파악하여 열화 메카니즘을 분석하였다. MgTiO3는 마이크로파 영역에서의 우수한 유전특성과 같은 낮은 유전손실을 가지며, 온도 안정성 또한 우수하다. 현재까지 벌크 세라믹 MgTiO3 의 응용 광범위하게 연구되어 왔으나 박막의 제조공정 및 전기적 특성 분석은 미흡한 형편이다. 따라서 벌크 세라믹과는 특성이 상이한 박막의 전기적 특성분석 및 연구가 필요하다. 분석을 위한 소자의 기본 구조로서 Metal-Insulator-Semiconductor(MIS) 구조를 채택하였다. MgTiO3 박막을 증착하기 위한 기판으로는 n형 Si(100)기판과 p형 Si(100)기판을 사용하였고, Si 기판 위에 급속 열처리기 (RTP)를 이용하여 SiO2를 ~100 두께로 성장시킨 것과 성장시키지 않은 것으로 구분하여 제작하였다. MgTiO3 박막은 펄스 레이저 증착 방식(PLD)에 의하여 약 2500 두께로 증착되었으며, 200mTorr 압력의 산소 분위기 하에서 기판의 온도를 40$0^{\circ}C$~55$0^{\circ}C$까지 5$0^{\circ}C$간격으로 변화시키며 제작하였다. 상하부의 전극 금속으로는 Al을 이용하였으며, 열증발 증착기로 증착하였다. 증착된 MgTiO3 박막의 결정구조를 확인하기 위하여 XRD 분석을 수행하였으며, 박막의 전기적 특성을 분석하기 위해 Boonton7200 C-V 측정기와 HP4140P를 이용한 경우에는 C-V 곡선에 이력현상이 나타났으나, MgTiO3/SiO2를 이용한 경우에는 이력현상이 나타나지 않았고, 유전율은 감소하는 것으로 나타났다. I-V 측정 결과, 절연층으로 MgTiO3/SiO2를 이용한 경우에는 MgTiO3만을 절연층으로 사용한 경우에 비해 동일한 전계에서 낮은 누설전류 값을 가짐을 알 수 있었다. 또한 박막의 증착온도가 증가함에 따라서 C-V 곡선의 위치가 양의 방향으로 이동함을 확인하였다. 위의 현상은 기판의 종류에 관계없이 발생하는 것으로 보아 벌크 또는 계면에 존재하는 결함에 의한 것으로 추정된다. 현재 C-V 곡선의 이동 원인과 I-V 곡선의 누설전류 메카니즘을 분석 중에 있으며 그 결과를 학회에서 발표할 예정이다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.225.1-225.1
• /
• 2013

지난 수년간 태양전지의 광전변환 효율을 높이기 위해 자가 조립된 InAs 또는 GaSb 와 같은 양자점을 GaAs 단일 p-n 접합에 적용하는 연구를 개발해 왔다. 그러나 양자점의 흡수 단면적에 의한 광흡수도는 양자점층을 수십 층을 쌓으면 증가하지만 활성층에 결함을 생성시킨다. 생성된 결함은 운반자 트랩으로 작용하여 태양전지의 광전변환 효율을 감소시킨다. 본 실험에서는 양자점이 적용된 태양전지와 적용되지 않은 태양전지의 광전변환 효율을 비교하고, 깊은준위 과도용량 분광법을 이용하여 결함상태를 측정하고 및 비교함으로써, 활성층 내부에 생성된 결함이 광전변환 효율에 미치는 영향을 분석하였다. 소자구조는 분자선 증착 방법을 이용하여, 먼저 n-형 GaAs 기판위에 n-형 GaAs를 300 nm 증착한 후, 도핑이 되지 않은 GaAs 활성층을 3.5 ${\mu}m$ 두께로 증착하였다. 마지막으로 p-형 GaAs를 830 nm 증착함으로써 p-i-n구조를 형성하였다. 여기서, n-형 GaAs 과 p-형 GaAs의 도핑농도는 동일하게 $5{\times}1018\;cm^{-3}$ 로 하였다. 또한 양자점 및 델타도핑 층을 각각 태양전지에 적용하기 위해 활성층내에 양자점 20층 및 델타도핑 20층을 각각 형성하였다. 이때, 양자점 태양전지, 델타도핑 태양전지와 양자점이 없는 태양전지의 광전변환 효율은 각각 4.24, 4.97, 3.52%로 나타났다. 태양전지의 전기적 특성을 측정하기 위해 소자구조 위에 Au(300nm)/Pt(30nm)/Ti(30nm)의 전극을 전자빔 증착장치로 증착하였으며, 메사에칭으로 직경 300 ${\mu}m$의 p-i-n 접합 다이오드 구조를 제작하였다. 정전용량-전압 특성 및 깊은준위 과도용량 분광법을 이용하여 태양전지의 결함분석 및 이에 따른 광전변환 효율의 상관관계를 논의할 것이다.

• Journal of the Korean Vacuum Society
• /
• v.22 no.4
• /
• pp.211-217
• /
• 2013

Two types of organic thin film solar cell devices with bulk hetero-junction (BHJ) structure were fabricated on plastic substrates using conjugated polymers of $PCDTBT:PC_{71}BM$ and $PTB7:PC_{71}BM$ blended as active channel layer. Time-variant characteristics of the organic thin film solar cell devices were investigated: short circuit current density ($J_{SC}$); open circuit voltage ($V_{OC}$); ; fill factor (FF); power conversion efficiency (PCE, ŋ). All the performance parameters were degraded by progress of the measurement time, while $V_{OC}$ showed the most drastic decrease with time. Possible factors to cause the time-variant alteration of performance parameters were discussed to be clarified.

• Korean Journal of Food Science and Technology
• /
• v.30 no.4
• /
• pp.842-847
• /
• 1998

Ohmic thawing in combination with conventional water immersion thawing was investigated. Frozen meat chunks $(10{\times}10{\times}10{\;}cm)$ were immersed in a water reservoir $(12{\times}12{\times}12{\;}cm)$ which temperature was maintained at $10^{\circ}C{\;}or{\;}20^{\circ}C$, and were positioned between two stainless-steel electrodes $(10{\times}10{\;}cm)$ having no direct contact with the samples. Alternating current $(60{\;}V{\sim}210{\;}V)$ at various frequency $(60{\;}Hz{\sim}60{\;}kHz)$ was used to generate internal heat by the electrical resistance. When the frequency was fixed to 60Hz, thawing time was reduced as the voltage increased. Frequency changes gave no significant effect on thawing time. Ohmically-thawed samples treated with lower voltage showed lower drip loss and higher water holding capacity.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.52 no.11
• /
• pp.29-35
• /
• 2015

The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.

• The Journal of Korean Institute of Information Technology
• /
• v.16 no.11
• /
• pp.35-41
• /
• 2018

Electrical impedance tomography (EIT) is a kind of nondestructive testing technique that obtains the internal resistivity distribution from the voltages measured at the electrodes located outside the area of interest. However, an image reconstruction problem in EIT has innate non-linearity and ill-posedness, so that it is difficult to obtain satisfactory reconstructed results. In general, a neural network can efficiently model the input and output relationships of a non-linear system. This paper proposes a method for estimating the position and size of a circular target using a multi-layer neural network. To verify the performance of the proposed method, neural network was trained and various computer simulations were performed and satisfactory performance was verified.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.36-44
• /
• 2010

The ambipolar diffusion equation has been solved in a fine-tube lamp of a few mm in diameter. In the diffusion of radial direction, the plasma diffuses and vanishes away at the glass wall by recombination with the characteristic time of plasma loss is given by $\tau_r\;=\;(r_0/2.4)^2/D_a$. With the radius $r_0{\sim}1\;mm$ and the ambipolar diffusion coefficient $D_a{\sim}0.01\;m^2/s$, the vanishing time is calculated $\tau_r{\sim}10\;{\mu}s$ which corresponds to the least value of frequency 30 kHz for the sustaining the plasma in the operation of high voltage AC-power. In the diffusion of longitudinal z-direction, a high density plasma generated at the area of a high voltage electrode, diffuses into the positive column with the characteristic time $\tau_z{\sim}0.1\;s$. The plasma diffusion velocity at the boundary of high density plasma is $u_D{\sim}10^2\;m/s$ at the time $t{\sim}10^{-6}$ s and the diffusion velocity becomes slow as $u_D{\sim}1\;m/s$ at $t{\sim}10^{-3}\;s$. Therefore, for the long lamp of 1 m, it takes about several seconds for the high density plasma at the area of electrode to diffuse through the whole positive column space.

• Journal of Korea Soil Environment Society
• /
• v.5 no.2
• /
• pp.55-66
• /
• 2000

A U.S EPA Synthetic soil matrix was used for reference neat soil and pyrene contaminated soil. For the contaminated soil, 4.79 wt.% pyrene was dissolved completely into the djchlorornethane, and the soil was evenly soaked with the pyrene solution. The contaminated soil samples(50$\pm$0.5mg) were heated in a modified electrical screen heater reactor which consisted of a thin stainless foil (3.5cm$\times$13cm$\times$0.00254cm, 302 stainless steel shim), two electrodes, and a 20cm dia. $\times$30cm tall cylindrical Pyrex chamber sealed at both ends by aluminum flanges. The heating rate and time conditions were selected as $455^{\circ}C$ @ $1137^{\circ}C$ /s, $760^{\circ}C$ @ $950^{\circ}C$ /s and $977^{\circ}C$ @ $977^{\circ}C$/s. Tar samples after heating the soils were collected on the aluminum foil funnel and a glass filter paper (25mm dia. filter paper) The tar sample and remnant soil on the reactor were extracted with dichloromethane covering the filters, foils and soil by sonicating each in the waterbath for 10 minutes. The extractions were run on a HPLC. At the low peak temperature(about $455^{\circ}C$ @ $1137^{\circ}C$/s) the color of tar was "white", at the middle peak temperature (about 76$0^{\circ}C$ @ 95$0^{\circ}C$/s) the color of tar was "pink brown", at the high peak temperature (about 977$^{\circ}C$ @ 977$^{\circ}C$/s) the color of tar was "dark brown". Cyclopeta(cd)pyrene (CPEP) , which is an interesting species due to mutagenic effect on human cells, was detected in tar samples only above the middle peak temperature. This species was not detected at the low peak temperature. Six isomers of bipyrene were detected. Phenanthrene(C$_{14}$ $H_{10}$) and cyclopenta(def)phenanthrene(C$_{15}$ $H_{10}$) were also detected, but their content was very small relative to the other listed compounds.to the other listed compounds.

• Journal of Korean Society of Environmental Engineers
• /
• v.34 no.7
• /
• pp.459-466
• /
• 2012

In order to improved treatment performance of dielectric barrier discharge (DBD) plasma, plasm + UV process and gas-liquid mixing method has been investigated. This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical). The basic DBD plasma reactor of this study consisted of a plasma reactor (consist of quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode), air and power supply system. Improvement of plasma reactor was done by the combined basic plasma reactor with the UV process, adapt of gas-liquid mixer. The effect of UV power of plasma + UV process (0~10 W), gas-liquid mixing existence and type of mixer, air flow rate (1~6 L/min), range of diffuser pore size (16~$160{\mu}m$), water circulation rate (2.8~9.4 L/min) and UV power of improved plasma + UV process (0~10 W) were evaluated. The experimental results showed that RNO degradation of optimum plasma + UV process was 7.36% higher than that of the basic plasma reactor. It was observed that the RNO decomposition of gas-liquid mixing method was higher than that of the plasma + UV process. Performance for RNO degradation with gas-liquid mixing method lie in: gas-liquid mixing type > pump type > basic reactor. RNO degradation of improved reactor which is adapted gas-liquid mixer of diffuser type showed increase of 17.42% removal efficiency. The optimum air flow rate, range of diffuser pore size and water circulation rate for the RNO degradation at improved reactor system were 4 L/min, 40~$100{\mu}m$ and 6.9 L/min, respectively. Synergistic effect of gas-liquid mixing plasma + UV process was found to be insignificant.