• Title/Summary/Keyword: 나노 바늘 구조

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Fabrication of the Silicon Nano Structure applicable to Non-volatile Memory Device using Block Copolymer (비휘발성 메모리 소자 응용을 위한 블록 공중합체를 이용한 실리콘 나노 구조 제작)

  • Jung, Sung-Wook;Kim, Hyun-Min;Park, Dae-Ho;Sohn, Byeong-Hyeok;Jung, Jin-Chul;Zin, Wang-Cheol;Parm, I.O.;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.95-96
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    • 2005
  • 나노 구조 제작을 위한 다양한 시도 중 블록 공중합체를 이용한 방법은 현재 활발한 연구가 진행되고 있는 분야이다. 본 연구에서는 비휘발성 메모리 소자의 용량 증가를 위하여 블록 공중합체 박막을 나노 마스크로 이용하고, 평행판헝 반응관 내에서 반응성 이온 에칭을 사용하여 나노 구조의 표면을 제작하였다. 에칭동안에 나노 마스크로서 사용할 블록 공중합체 박막은 PS-b-PMMA를 이용하여 제작하였고, UV를 주사하여 PMMA를 제거하고 수직적인 나노 흩을 구성하여 나노 패터닝이 가능하도록 하였다. 실험을 통하여 매우 균일한 나노 바늘 형태의 구조를 생성할 수 있으며, 반응기체와 유량의 조절을 통하여 다양한 표면 구조를 확인할 수 있었다. 블록 공중합체는 나노 마스크로서 뛰어난 기능을 나타내며, 이를 이용하여 나노 사이즈의 패터닝이 가능하고, 표면적 증가를 통하여 비휘발성 메모리 소자의 용량 증가에 기여할 수 있다.

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Structural and Optical Properties of ZnO Nanowires Synthesized by LP-MOCVD Process (LP-MOCVD법으로 합성된 ZnO 나노선의 구조 및 광학적 특성)

  • Choi, Young-Jin;Park, Jae-Hwan;Park, Jae-Gwan
    • Korean Journal of Crystallography
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    • v.17 no.1
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    • pp.14-18
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    • 2006
  • MOCVD 공정방법에 의해 수직정렬된 ZnO 나노선을 합성하고 공정조건 제어에 의해 합성되는 나노선의 물리적, 광학적 특성이 어떻게 변화하는지를 고찰하고자 하였다. 온도 및 산소분압제어 등의 공전변수 제어를 통하여 ZnO 나노 구조체는 나노선, 나노로드 뿐만 아니라 나노바늘 (nano-needle) 등 다양한 구조로 변화되었으며 그 직경 및 길이도 제어가 가능하였다. 전체적으로 양호한 특성의 wurzite 구조를 나타내었으며 기판에 수직인 방향으로 [0001] 방향으로 성장하였다. 광학특성에서는 나노선 직경이 작아질수록 주방출 피크의 천이현상이 관찰되었다.

Effects of Growth Temperature on Hydrothermally Grown ZnO Nanorod Arrays (수열합성법으로 성장된 산화 아연 나노로드의 성장 온도에 따른 구조적, 광학적 특성 연구)

  • Jeong, Yong-Il;Ryu, Hyuk-Hyun
    • Journal of the Korean Vacuum Society
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    • v.20 no.3
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    • pp.211-216
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    • 2011
  • In this study, the effects of growth temperature on structural and optical properties of hydrothermally grown ZnO nanorod arrays have been investigated. Zinc nitrate ($Zn(NO_3)_2$) and hexamethylenetetramine were used as precursors. The ZnO buffered Si(100) with a thickness of 40 nm was used as the substrates. The ZnO nanorods were grown on these substrates with the temperature ranging from 55 to $115^{\circ}C$. The results were characterized by scanning electron microscope, X-ray diffraction and room temperature photoluminescence measurements. Well-aligned ZnO nanorods arrays were obtained from all samples. The tips of nanorods were flat when the temperature was less than $95^{\circ}C$, and the sharp-tip nanoneedle-like morphologies were obtained with the temperature of $115^{\circ}C$. In addition, some bundles were on the nanorods arrays with $115^{\circ}C$ due to the non-equilibrium growth. The growth temperature could affect the crystal and optical properties of ZnO. For the effects on crystal properties, the intensity of (002) peak was increased as the temperature was increased to $75^{\circ}C$, then decreased as the temperature was further increased to $115^{\circ}C$. As for the effects on optical properties, the intensity ratio of UV peak to visible peak is increased with the temperature increasing and the strongest UV peak intensity was obtained with the growth temperature of $95^{\circ}C$.

Study on the Silicon Nano-needle Structure for Nano floating Gate Memory Application (나노 부유 게이트 메모리 소자 응용을 위한 실리콘 나노-바늘 구조에 관한 연구)

  • Jung, Sung-Wook;Yoo, Jin-Su;Kim, Young-Kuk;Kim, Kyung-Hae;Yi, Jun-Sin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1069-1074
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    • 2005
  • In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

Preparation of nanocrystalline $TiO_2$ photocatalyst films by using a titanium naphthenate (티타늄 나프테네이트를 이용한 나노결정질 $TiO_2$ 광촉매 박막의 제조)

  • 이선옥;김상복;윤연흠;강보안;황규석;오정선;양순호;김병훈
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.5
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    • pp.240-246
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    • 2002
  • $TiO_2$ films on soda-lime-silica glasses were prepared by spin coating-pyrolysis process using titanium naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min in air and annealed at 500, 550 and $600^{\circ}C$ for 30 min in air. Crystallinity of the film was investigated by X-ray diffraction analysis. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. After annealing at 550 and $600^{\circ}C$, the X-ray diffraction patterns consist of only anatase peak. Films annealed at 500 and $550^{\circ}C$ exhibited flat surfaces. While with the increase in annealing temperature to $600^{\circ}C$, the $TiO_2$ film showed abnormal growth of three-dimensional needle-shaped grains. For all samples, high transmittance, above 90 % at 500 nm, was obtained at visible range. To investigate photocatalytic properties, IR absorbance associated with the C-H stretching vibrations of a thin solution-cast film of stearic acid under 365 nm (2.4 mW/$\textrm{cm}^2$) UV irradiation was estimated.