• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.184-184
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• 2010

반도체 집적도의 비약적인 발전으로 각 박막 층간의 두께는 더욱 줄어들었고 이는 각 박막 층간의 확산에 대한 문제를 간과할 수 없게 하였다. 따라서 각 층간의 확산을 방지하기 위하여 두께가 수십 nm size의 확산방지막의 연구에 대한 관심도는 증가하게 되었다. 본 연구에서 분석을 위하여 사용된 Nano-indentation은 박막 표면에 다이아몬드 팁을 이용하여 압입을 실시하여 이때 시표의 반응에 의한 팁의 위치(Z-축)를 in-situ로 측정하여 인가력과 팁의 위치에 대한 연속 압입곡선을 측정하게 된다. 이를 통하여 박막의 hardness와 elastic modulus를 측정하게 되고, 연속 압입곡선 분석을 통하여 박막의 표면응력 변화를 측정한다. 이 논문에서는 반도체의 기판으로 사용되는 Si기판과 금속배선 물질인 Cu와의 확산을 효과적으로 방지하기 위한 W-C-N 확산 방지막을 제시하였고, 시료 증착을 위하여 RF-magnetron sputter를 사용하여 동일한 증착조건에서 질소(N)의 비율을 다르게 하여 박막 내 질소비율에 따른 확산방지막을 제작하였다. 이후 시료의 열적 안정성 측정을 위하여 상온, $600^{\circ}C$, $800^{\circ}C$로 각각 질소 분위기에서 30분간 열처리 과정을 실시하여 열적 손상을 인가하였다. 고온에서 확산방지막의 물리적 특성을 알아보기 위해 Nano-indentation을 이용하여 분석하였고, WET-SPM을 이용하여 표면 이미지와 거칠기를 확인하였다. 그 결과 질화물질이 내화물질에 비해 고온에서 물성변화가 적게 나타나는 것을 알 수 있었고, 균일도와 결정성 또한 질화물질에서 더 안정적이었다.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.229-235
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• 2009

Millimeter-scale aligned arrays of thin-multiwalled carbon nanotube (t-MWCNT) on layered Si substrates have been synthesized by oxygen-assisted microwave plasma chemical vapor deposition (MPCVD). We have succeeded in growth of vertically aligned MWCNTs up to 2.7 mm in height for 150 min. The effect of $O_2$ and water vapour on growth rate was systematically investigated. In the case of $O_2$ gas, the growth rate was ${\sim}22{\mu}m/min$, which is outstanding growth rate comparing with those of conventional thermal CVD (TCVD). Scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), and Raman spectroscopy were used to analyze the CNT morphology, composition and growth mechanism. The role of $O_2$ gas during the CNT growth was discussed on.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.416-417
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• 2013

최근 질화물계 발광다이오드(light emitting diode, LED) 소자는 핸드폰, 스마트 TV 등의 디스플레이 분야와 실내외조명, 감성조명, 특수조명 등의 조명분야에 그 응용분야가 급속히 확대되고 있다. 이러한 LED 소자는 에너지 절감과 친환경에 장점을 가지고, 가까운 미래에 조명시장을 대체할 것으로 예상된다. 이를 만족하기 위해서는 현재보다 더 높은 효율을 갖는 LED 개발이 요구되어지고 있는 상황이다. 일반적으로 질화물계 LED 소자의 효율은 내부양자 효율, 광추출 효율 등으로 나타낼 수 있다. 내부 양자효율은 성장된 결정의 질의 개선 및 다층의 이종접합 또는 다중양자우물 구조와 같이 활성층의 캐리어 농도를 높이는 접합구조로 설계되어 80% 이상의 효율을 나타낸다. 그러나 광추출 효율은 이에 미치지 못하고 있다. 이는 반도체 재료의 높은 굴절률로 인하여 빛이 외부로 탈출하지 못하고 내부로 반사되거나 물질 안에서 흡수가 일어나기 때문이다. 따라서 이러한 문제를 해결하기 위해 많은 연구 그룹들은, 표면에 패턴 형성하여 빛의 전반사를 줄여 그 효율을 올리는 연구결과를 보고하고 있다. 대표적인 방법으로는 wet etching, 전자빔 리소그라피, 나노임프린트 리소그라피, 레이저 홀로 리그라피, 나노스피어 리소그라피 등이 사용되고 있다. 이 중, 나노스피어 리소그라피는 폴리스틸렌 혹은 실리카 등과 같은 나노 크기의 bead를 사용하여 반도체 기판 표면에 단일층으로 고르게 코팅한 마스크로 사용하여 패턴을 주는 방법이다. 이 방법의 장점으로는 대면적에 균일한 패턴을 형성할 수 있고, 공정비용이 저렴하여 양산하기에 적합하다는 특징이 있다. 나노스피어 리소그라피를 통해서 표면에 생성된 패턴 모양의 각도에 따라서, 식각되는 깊이에 변화에 따라 실험한 결과들은 있지만, 아직까지 크기가 다른 나노입자들의 마스크 이용하여 형성된 패턴 밀도에 따른 광 추출 효과에 대한 연구가 많이 미흡하다. 따라서 본 연구에서는 다양한 크기의 실리카로 패턴을 형성시켜 패턴 밀도에 대한 광추출 효율의 효과에 대해서 조사하였다. 실험 방법으론, DI, 에탄올, TEOS, 암모니아의 순서대로 그 혼합 비율을 조정하여 100, 250, 500 nm 크기의 나노입자를 합성하였고 이것을 질화물계 LED의 표면 위에 단일층으로 스핀코팅 방법을 통해 코팅을 하였다. 그 후 ICP-RIE 방법으로 필라 패턴을 형성하였는데, 그 결과 100 nm SiO2 입자를 이용한 경우 $4.5{\times}10^9$/$cm^2$, 250 nm의 경우 $1.4{\times}10^9$/$cm^2$, 500 nm의 경우 $0.4{\times}10^9$/$cm^2$의 패턴의 밀도를 보여주었다(Fig. 1). 패턴의 밀도에 따라 전계광학적 특성을 확인하여 보았는데, 그 결과는 평평한 표면과 비교하였을 때 100 nm에서 383%, 250 nm에서는 320%, 500 nm에서는 244% 상승하는 결과를 보여주었다(Fig. 2). 이번 실험을 통해서 LED의 광추출 효율은 표면 모양과 깊이 뿐 아니라 밀도가 커질수록 그 효율이 올라간다는 사실을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.374-379
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• 2006

In this study, carbon nanotubes (CNTs) were grown on glass substrates coated with Ni/Cr by an atmospheric pressure plasma enhanced chemical vapor deposition(AP-PECVD) and their structural and electrical characteristics were investigated as a possible application to the field emitter of field emission display (FED) devices. The substrate temperature ($400{\sim}500^{\circ}C$) were varied and the grown CNTs were multi wall CNTs (at $500^{\circ}C$, 15 - 20 layers of graphene sheets, distance of each layer : 0.3nm, inner diameter: 10 - 15nm, outer diameter: 30 - 40nm). The ratio of defective carbon peak to graphite carbon peak of the CNTs grown at $500^{\circ}C$ (C measured by fourier transform(FT)-Raman was 0.772 $I_D / I_G$ ratio. When field emission properties were measured, the turn-on field was $2.92V/{\mu}m$ and the emission field at $1mA/cm^2$ was $5.325V /{\mu}m$.

• Journal of the Korean Society of Marine Environment & Safety
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• v.28 no.spc
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• pp.23-29
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• 2022

To detect harmful chemical substances in seawater, we fabricated a prototype sensor and evaluated its performance. The prototype sensor consisted of a detector, housing, and driving circuit. We built the detector by printing an Indium-Tin-Oxide (ITO) nanoparticle film on a flexible substrate, and it had two detection parts for simultaneous detection of temperature and HNS concentration. The housing connected the detector and the driving circuit and was made of Teflon material to prevent chemical reactions that may affect sensor performance. The driving circuit supplied electric power, and display measured data using a bridge circuit and an Arduino board. We evaluated the sensor performances such as response (ΔR), the limit of detection (LOD), response time, and errors to confirm the specification.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.43-49
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• 2005

YSZ layer containing nano-sized particles has been deposited on the commercial A1203 substrate by Electron Beam Physical Vapor Deposition (EB-PVD). The role of coating rnjcrostructures of YSZ to indentation damage is studied. The different coating microsouctures are prepared by varying the substrate temperatures from $600^{circ}C$ to $800^{circ}C$ during the deposition. Microhardness test and Hertzian indentation are conducted on the $YSZ/Al_{2}O_{3}$ layered systems. The damage and flilure behaviors have been investigated according to the effect of microstructures and indentation loads. With increasing the substrate temperature during EB-PVD, the overall grain sizes are coarser and more faceted, which microsoucture ultimately influences on the indentation behavior, thus, YSZ/Al_{2}O_{3}$ layered system prepared at the substrate temperature of $800^{circ}C$ shows relatively higher damage tolerance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1056-1063
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• 2006

Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

• Journal of Industrial Convergence
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• v.21 no.8
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• pp.35-42
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• 2023

Recently, electronic devices with bendable electronic devices based on flexible substrates are being sold, and therefore, the purpose of this study is to evaluate the possibility of flexible substrates of conductive transparent tapes. As a transparent electrode, carbon nanotube (CNT) was formed by the coating method developed by the research team, and samples coated up to 5 times were fabricated. The surface resistance and transmittance of the substrate were measured, and both resistance and transmittance decreased as the number of CNT coatings increased. After the tape was detached from the glass, the surface resistance slightly increased in all samples, and the transmittance increased by about 10% in all measured wavelength ranges because the glass was removed. Next, the tape coated with CNT twice was used to a bending test 20,000 times under the condition of a radius of curvature of 2 mm. The electrical and optical properties before and after bending did not change, which means that there was no change in CNT properties due to bending.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.36-40
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• 2003

The diamond-like nanocomposite (DLN) thin films were deposited on Si substrates using $CH_4/(C_2H_5O)_4Si/H_2$/Ar gas mixtures as source gases by the plasma enhanced chemical vapor deposition (PECVD). The chemical structure and microstructure of grown films were investigated and their tribological properties were evaluated by a ball-on-plate type tribometer. The deposited DLN films mainly consisted of diamond-like a-C:H and quartz-like a-Si:O networks. The DLN films had a good agreement with tribological coating applications due to their extremely low friction coefficients and low wear rates.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.12
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• pp.1245-1249
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• 2015

This study investigated the reflection spectra of wrinkled metal/polymer multilayers. A wavy surface was self-assembled by annealing an aluminum-coated poly(methyl metacrylate) layer on a silicon substrate. The total and diffuse reflectance characteristics of the sample with additional metal coatings(aluminum or silver) were evaluated in the visible wavelength(400~800 nm) using a spectrophotometer. The results showed that the wrinkled surface enhanced the diffuse reflectance up to 40~50% in the lower-wavelength range, demonstrating its potential for applications to optical thin-film devices.