• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.138-143
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• 2011

To investigate the electromagnetic interference shielding efficiency (EMI SE) property based on heat treatment effects of carbon fibers in various temperatures, the polyacrilonitrle-based carbon fibers were prepared by electrospinning method and treated at 1073, 1323, 1873 and 2573 K. The surface morphology of carbon fibers was investigated by using FE-SEM and the carbon crystallization was studied by Raman spectroscopy based on effects of reaction temperatures. The electrical conductivity was obtained by measuring the surface resistance with four probe method on carbon crystallization. The permittivity, permeability and EMI SE were investigated by using S-parameter in the range of 800~4500 MHz. In case of carbon fibers treated at 2573 K, the improved carbon crystallization was confirmed by Raman spectrum and the enhanced electrical conductivity showing 54.7 S/cm was also observed. The permittivity was dramatically improved by factor of 4 based on effect of high reaction temperature. Eventually, the highly improved EMI SE value was obtained showing around 41.7 dB.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.467-472
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• 2011

This study investigated illite/polypropylene (PP) composite filament formation via melt-spinning and evaluated their physical properties to prepare functional fibers using natural materials. When composite filaments were formed, the composite filaments exhibited smaller fiber diameters compared to that of neat PP filament because of the lubricant effect of illite induced by its layered structure. Moreover, fluorination effect increased interfacial affinity and dispersion in the polymer, resulting in smaller diameter of fluorinated illite/PP composite filament, which was 2/3 of the neat PP filament diameter. Addition of raw and fluorinated illite improved thermal stability of illite/PP composite filament. Raw illite/PP composite filament cannot be used for a practical application, because it broke during drawing process, whereas the fluorinated illite/PP composite filament can be used for a practical application, because it exhibited similar tensile strength of the neat PP filament and 50% increased modulus. Even with improved illite/PP interfacial affinity and illite dispersion in the polymer, illite/PP composite filament formed microcomposite, because non-expandable illite had strongly bound layers, resulting in only a little illite exfoliation and PP intercalation into illite.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.1-12
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• 2021

Here, we introduce a laser-induced graphene synthesis technology and its applications for the electric/electronic device manufacturing process. Recently, the micro/nanopatterning technique of graphene has received great attention for the utilization of these new graphene structures, which shows progress developments at present with a variety of uses in electronic devices. Some examples of practical applications suggested a great potential for the tunable graphene synthetic manners through the control of the laser set-up, such as a selection of the wavelength, power adjustment, and optical techniques. This emerging technology has expandability to electric/electronic devices combined together with existed micro-packaging technology and can be integrated with the new processing steps to be applied for the operation in the fields of biosensors, supercapacitors, electrochemical sensors, etc. We believe that the laser-induced graphene technology introduced in this paper can be easily applied to portable small electronic devices and wearable electronics in the near future.

• Journal of Powder Materials
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• v.28 no.2
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• Science of Emotion and Sensibility
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• v.25 no.1
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• pp.67-78
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• 2022

Interest in bio-signal monitoring of wearable devices is increasing significantly as the next generation needs to develop new devices to dominate the global market of the information and communication technology industry. Accordingly, this research developed a resistive textile strain sensor through a wetting process in a single-wall carbon nanotube dispersion solution using an E-Band with low hysteresis. To measure the resistance signal in the E-Band to which electrical conductivity is applied, a universal material tester, an Arduino, and LCR meters that are microcontroller units were used to measure the resistance change according to the tensile change. To effectively handle various noises generated due to the characteristics of the fabric textile strain sensor, the filter performance of the sensor was evaluated using the moving average filter, Savitsky-Golay filter, and intermediate filters of signal processing. As a result, the reliability of the filtering result of the moving average filter was at least 89.82% with a maximum of 97.87%, and moving average filtering was suitable as the noise filtering method of the textile strain sensor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.175-182
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• 2022

Rare-earth elements were doped with Mg to enhance the temperature stability of dielectric properties of BaTiO₃ for its application to MLCC (Multi-Layer Ceramic Capacitor). The additives strongly affect both grain growth and densification behaviors during sintering, and hence dielectric properties. The additive effects therefore should be examined in each system with different additives. This study investigated the crystal structure, grain growth and densification behaviors and related variations in dielectric constant with respect to sintering temperature. Dielectric constant appears to be varied with grain size in a temperature range between 1200 and 1300℃, suggesting the importance of grain size control. The temperature dependence of grain size variation was well explained by an established theory correlating the grain growth behavior with grain boundary structure. This accordance provides a basis for sintering technique to control grain growth thus to improve dielectric constant in rare-earth doped BaTiO₃.

• Journal of Powder Materials
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• v.29 no.1
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• pp.47-55
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• 2022

Tungsten carbide is widely used in carbide tools. However, its production process generates a significant number of end-of-life products and by-products. Therefore, it is necessary to develop efficient recycling methods and investigate the remanufacturing of tungsten carbide using recycled materials. Herein, we have recovered 99.9% of the tungsten in cemented carbide hard scrap as tungsten oxide via an alkali leaching process. Subsequently, using the recovered tungsten oxide as a starting material, tungsten carbide has been produced by employing a self-propagating high-temperature synthesis (SHS) method. SHS is advantageous as it reduces the reaction time and is energy-efficient. Tungsten carbide with a carbon content of 6.18 wt % and a particle size of 116 nm has been successfully synthesized by optimizing the SHS process parameters, pulverization, and mixing. In this study, a series of processes for the high-efficiency recycling and quality improvement of tungsten-based materials have been developed.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.86-90
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• 2023

The packaging of electronic devices performs a protective function to ensure that their durability and reliability are not affected by changes in the operating environment caused by external factors. Recent advances in materials have led to ongoing research into bonded packaging of heterogeneous materials such as polymers and inorganic materials in electronic devices. In this packaging process, it is important to have a binding that joins the materials and ensures the operating environment, which includes adhesion to the substrate, corrosion and oxidation resistance through moisture removal, and durability. In this study, the hygroscopicity of the coating layer by modifying the polymer surface based on PVA was evaluated by controlling and measuring the contact angle, and the adhesion was confirmed by applying water-based ink and testing according to ASTM_D3363. For the durability of the polymer surface, the IPL post-treatment process was used to improve the hardness and toughness against applied voltage, and the pencil hardness test and nanoindentation test were conducted. Through this, we analyzed and proposed solutions to ensure the reliability and durability of polymer devices in polymer microfabrication against environmental factors such as moisture, temperature fluctuations and adhesion, and surface abrasion.