• Applied Biological Chemistry
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• v.37 no.5
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• pp.356-360
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• 1994

The optimum pH and temperature for endo-polygalacturonase activity from Jujube were 5.0 and $50^{\circ}C$. The range of its stability to pH was 4.0 to 5.0. The enzyme was inactivated about 35% by treatment at $70^{\circ}C$ for 1 hr. It was found that $Ag^+$, $Zn^{++}$ and $Mg^{++}$ increased the enzyme activity. In contrast, $Ba^{++}$, $Hg^{++}$, $Pb^{++}$, $Ca^{++}$, $Mn^{++}$, $Cu^{++}$, $Fe^{+++}$, $Na^+$ and $K^+$ decreased it. The enzyme was inactivated by treatment with maleic anhydride, iodine and 2,4-dinitrophenol. The results indicate that active site is a imidazole group on the enzyme.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.1 no.1
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• pp.37-42
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• 2000

Copper thin films have been prepared by a metal organic chemical vapor deposition (MOCVD) technology on polyimide and TiN substrates. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared with the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were annealed in a vacuum condition after the deposition, and the annealing effect on the electrical properties of the films was measured. The crystallinity and the microstructures of the films were observed by scanning electron microscopy (SEM), and the electrical resistivity was measured by 4-point probe. In the case of the Cu deposition on TiN substrate, the best electrical property of the films was measured for the samples prepared at 18$0^{\circ}C$. Very high deposition rate of the Cu film up to 250 nm/min was obtained on the polyimide substrate when the mixture of liquid and vapour precursor was used.

• Polymer(Korea)
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• v.35 no.4
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• pp.370-374
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• 2011

A conductive PANI solution was successfully fabricated by doping with camphorsulfonic acid and the polymerization of aniline and the confirmation of doping were characterized by FTIR spectroscopy. In organic thin film transistors, PANI gate electrodes were spin-coated on a PES substrate and their conductivity variations were monitored by a 4-probe method with different annealing temperatures. The surface properties of PANI thin films were investigated by an AFM and an optical microscope, OTFTs with PANI gate electrode had characteristics of carrier mobility as large as 0.15 $cm^2$/Vs and on/off ratio of $2.4{\times}10^6$, Au gate OTFTs with the same configuration were fabricated to investigate the effect of polymer gate electrode for the comparison of device performances. We could obtain the comparable performances of PANI devices to those of Au gate devices, resulting in an excellent alternative as an electrode in flexible OTFTs instead of an expensive Au electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.74-74
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• 2000

낮은 유전상수(k$\leq$3)와 높은 열적안정성(>4$25^{\circ}C$)은 초고집적회로(ULSI)기술에서 RC 지연을 해결하기 위한 금속배선의 중간 절연층으로서의 2개의 가장 중요한 특성이다. 본 연구에서는 cyclohezane을 precursor로 사용하여 plasma enhanced chemical vapor deposition(PECVD)방법으로 유기박막을 성장시켰으며 낮은 유전상수와 높은 열적안정성을 동시에 확보하기 위하여 열적안정성은 좋지 않지만 유전상수가 낮은 박막(soft layer)위에 유전상수는 다소 높지만 열적안정성이 좋은 박막(hard layer)을 얇게 증착하여 hard layer/soft layer의 2층 구조를 형성하여서 구조적, 전기적 특성을 조사하였다. 유기박막은 5$0^{\circ}C$로 유지된 reactor 내부에서 argon(Ar) plasma에 의해 증착되었으며 platinum(Pt)기판과 silicon 기판위에 동시에 증착하였다. Pt 기판위에 증착한 시편으로 유전상수, I-V 등 전기적 특성을 측정하였고, silicon 기판위에 증착한 시편으로 열적안정성과 구조적 특성등을 분석하였다. 증착압력 0.2Torr에서 plasma power를 5W에서90W로 증가할 때 유전상수는 2.36에서 3.39로 증가하였으며 열적안정성은 90W에서 180W로 증가하였을 때 유전상수는 2.42에서 2.79로 증가하엿고 열적안정성은 모두30$0^{\circ}C$이하였다. 단일층 구조에서는 유전상수가 낮은 박막은 열적으로 불안정하고 열적 안정성이 좋은 박막은 유전상수가 다소 높은 문제가 나타났다. 이런 문제를 해결하기 위하여 2 Torr, 120W에서 증착한 유전상수가 2.55이고 열적으로 불안정한 박막을 soft layer로 5150 증착하고 그 위에 0.2Torr, 90W에서 증착한 유전상수가 3.39이고 열적으로 45$0^{\circ}C$까지 안정한 박막을 hard layer로 360 , 720 , 1440 증착하였다. 증착된 2층구조 박막의 유전상수는 각각 2.62, 2.68, 2.79이었으며 열적안정성 측정에서는 40$0^{\circ}C$까지 두께 감소가 보이지 않았다. 그러나 SEM 측정에서 열처리 후 표면이 거칠어지는 현상이 발견되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.71-71
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• 2000

본 연구에서는 차세대 마이크로파 유전체 소자로서의 응용을 목적으로 펄스 레이저 방식에 의하여 증착된 MgTiO3 박막의 전기적 특성을 종합적으로 연구 분석하였다. 이를 바탕으로 MgTiO3 박막의 유전손실 등과 같은 열화를 야기시키는 박막 내부 또는 박막과 기판간의 결함의 특성을 파악하여 열화 메카니즘을 분석하였다. MgTiO3는 마이크로파 영역에서의 우수한 유전특성과 같은 낮은 유전손실을 가지며, 온도 안정성 또한 우수하다. 현재까지 벌크 세라믹 MgTiO3 의 응용 광범위하게 연구되어 왔으나 박막의 제조공정 및 전기적 특성 분석은 미흡한 형편이다. 따라서 벌크 세라믹과는 특성이 상이한 박막의 전기적 특성분석 및 연구가 필요하다. 분석을 위한 소자의 기본 구조로서 Metal-Insulator-Semiconductor(MIS) 구조를 채택하였다. MgTiO3 박막을 증착하기 위한 기판으로는 n형 Si(100)기판과 p형 Si(100)기판을 사용하였고, Si 기판 위에 급속 열처리기 (RTP)를 이용하여 SiO2를 ~100 두께로 성장시킨 것과 성장시키지 않은 것으로 구분하여 제작하였다. MgTiO3 박막은 펄스 레이저 증착 방식(PLD)에 의하여 약 2500 두께로 증착되었으며, 200mTorr 압력의 산소 분위기 하에서 기판의 온도를 40$0^{\circ}C$~55$0^{\circ}C$까지 5$0^{\circ}C$간격으로 변화시키며 제작하였다. 상하부의 전극 금속으로는 Al을 이용하였으며, 열증발 증착기로 증착하였다. 증착된 MgTiO3 박막의 결정구조를 확인하기 위하여 XRD 분석을 수행하였으며, 박막의 전기적 특성을 분석하기 위해 Boonton7200 C-V 측정기와 HP4140P를 이용한 경우에는 C-V 곡선에 이력현상이 나타났으나, MgTiO3/SiO2를 이용한 경우에는 이력현상이 나타나지 않았고, 유전율은 감소하는 것으로 나타났다. I-V 측정 결과, 절연층으로 MgTiO3/SiO2를 이용한 경우에는 MgTiO3만을 절연층으로 사용한 경우에 비해 동일한 전계에서 낮은 누설전류 값을 가짐을 알 수 있었다. 또한 박막의 증착온도가 증가함에 따라서 C-V 곡선의 위치가 양의 방향으로 이동함을 확인하였다. 위의 현상은 기판의 종류에 관계없이 발생하는 것으로 보아 벌크 또는 계면에 존재하는 결함에 의한 것으로 추정된다. 현재 C-V 곡선의 이동 원인과 I-V 곡선의 누설전류 메카니즘을 분석 중에 있으며 그 결과를 학회에서 발표할 예정이다.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.200-204
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• 2011

In this paper, we deposited the tungsten carbon nitride (W-C-N; nitrogen gas flow of 2 sccm) and tungsten carbon (W-C) thin film on silicon substrate using rf magnetron sputter. Then the thin films annealed at $800^{\circ}C$ during 30 minute ($N_2$ gas ambient) for thermal damage. Nano-indenter was executed 16 points on thin film surface to measure the thermal stability, and we also propose the elastic modulus and the Weibull distribution, respectively. This nanotribology method provides statistically reliable information. From these results, the W-C-N thin film included nitrogen gas flow is more stable for film uniformities, physical properties and crystallinities than that of not included nitrogen gas flow.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.615-620
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• 2008

We fabriacted thermal evaporated $10nm-Ni_{1-x}Co_x$(x=0.2, 0.6, and 0.7) films on 70 nm-thick polysilicon substrate with $0.5{\mu}m$ line width. NiCo composite silicide layers were formed by rapid thermal annealing (RTA) at the temperatures of $700^{\circ}C$ and $1000^{\circ}C$. Then, we checked the microstructure evaluation of silicide patterns. A FIB (focused ion beam) was used to micro-mill the interconnect patterns with low energy condition (30kV-10pA-2 sec). We investigated the possibility of selective removal of silicide layers. It was possible to remove low resistance silicide layer selectively with the given FIB condition for our proposed NiCo composite silicides. However, the silicides formed from $Ni_{40}Co_{60}$ and $Ni_{30}Co_{70}$ composition showed void defects in interconnect patterns. Those void defects hinder the selective milling for the NiCo composite silicides.

• Journal of Convergence for Information Technology
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• v.9 no.3
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• pp.75-81
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• 2019

In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.185-189
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• 2011

In this work, nano-sized M-ferrites (M=Co, Ni, Cu, Zn) for the decomposition of carbon dioxide were synthesized by the chemical co-precipitation. From the thermogravimetric analysis, it was clear that the maximum weight loss of each sample took place below $350^{\circ}C$. High temperature calcination resulted in more systematic crystallines, smaller specific surface area and larger particle size. An analysis by FTIR in the range of $375{\sim}406cm^{-1}$ revealed the presence of chelates at the octahedral site, which implies the formation of spinel structure in the ferrites. The current work showed that a $500^{\circ}C$ is the optimum heat treatment temperature of metal ferrites for $CO_2$ decomposition reaction.

• Journal of Biomedical Engineering Research
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• v.43 no.2
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• pp.116-123
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• 2022

This study analyzes the Mechanical properties of a medical bone plate by 3D printing. With the recent development of 3D printing technology, it is being applied in various fields. In particular, in the medical field, the use of 3D printing technology, which was limited to the existing orthosis and surgical simulation, has recently been used to replacement bones lost due to orthopedic implants using metal 3D printing. The field of application is increasing, such as replacement. However, due to the manufacturing characteristics of 3D printing, micro pores are generated inside the metal printing output, and it is necessary to reduce the pores and the loss of mechanical properties through post-processing such as heat treatment. Accordingly, the purpose of this study is to analyze the change in mechanical performance characteristics of medical metal plates manufactured by metal 3D printing under various conditions and to find efficient metal printing results. The specimen to be used in the experiment is a metal plate for trauma fixation applied to the human phalanx, and it was manufactured using the 'DMP Flex 100(3D Systems, USA), a metal 3D printer of DMLS (Direct Metal Laser Sintering) method. It was manufactured using the PBF(Powder Bed Fusion) method using Ti6Al4V ELI powder material.