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Fabrication and Characterization of Organic Thin-Film Transistors by Using Polymer Gate Electrode  

Jang, Hyun-Seok (Materials Research Center for Information Display, Kyung Hee university)
Song, Ki-Gook (Materials Research Center for Information Display, Kyung Hee university)
Kim, Sung-Hyun (Materials Research Center for Information Display, Kyung Hee university)
Publication Information
Polymer(Korea) / v.35, no.4, 2011 , pp. 370-374 More about this Journal
Abstract
A conductive PANI solution was successfully fabricated by doping with camphorsulfonic acid and the polymerization of aniline and the confirmation of doping were characterized by FTIR spectroscopy. In organic thin film transistors, PANI gate electrodes were spin-coated on a PES substrate and their conductivity variations were monitored by a 4-probe method with different annealing temperatures. The surface properties of PANI thin films were investigated by an AFM and an optical microscope, OTFTs with PANI gate electrode had characteristics of carrier mobility as large as 0.15 $cm^2$/Vs and on/off ratio of $2.4{\times}10^6$, Au gate OTFTs with the same configuration were fabricated to investigate the effect of polymer gate electrode for the comparison of device performances. We could obtain the comparable performances of PANI devices to those of Au gate devices, resulting in an excellent alternative as an electrode in flexible OTFTs instead of an expensive Au electrode.
Keywords
conducting polymer; polyaniline; polymer gate electrode; organic thin film transistors;
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1 D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Electron Device Lett., 18, 87 (1997).   DOI
2 M. Halik, H. Klauk, U. Zschieschang, T. Kriem, G. Schnid, W. Ralik, and K. Wussow, Appl. Phys. Lett., 81, 289 (2002).   DOI   ScienceOn
3 K. Shibata, H. Wada, K. Ishikawa, and H. Takezoe, Appl. Phys. Lett., 90, 193509 (2007).   DOI   ScienceOn
4 Q. Li, J. Wu, Q. Tang, Z. Lan, P. Li, J. Lin, and L. Fan, Electrochem. Commun., 10, 1299 (2008).   DOI   ScienceOn
5 D. Li and L. J. Guo, Appl. Phys. Lett., 88, 063513 (2006).   DOI   ScienceOn
6 K. Hong, S. Y. Yang, C. Yang, S. H. Kim, D. Choi, and C. E. Park, Org. Electron., 9, 864 (2008).   DOI   ScienceOn
7 K. Lee, S. Cho, S. H. Park, A. J. Heeger, C.-W. Lee, and S.-H. Lee, Nature, 441, 65 (2006).   DOI   ScienceOn
8 K. S. Lee, G. B. Blanchet, F. Gao, and Y. Loo, Appl. Phys. Lett., 86, 074102 (2005).   DOI   ScienceOn
9 J. Tang, X. Jing, B. Wang, and F. Wang, Synthetic Metals, 24, 231 (1988).   DOI   ScienceOn
10 J. Ouyang, C.-W. Chu, F.-C. Chen, Q. Xu, and Y. Yang, Adv. Funct. Mater., 15, 203 (2005).   DOI   ScienceOn
11 A. Dodabalapor, Z. Bao, A. Makhija, J. G. Laquindanumm, V. R. Raju, Y. Feng, H. E. Katz, and J. Rogers, Appl. Phys. Lett., 73, 142 (1998).   DOI   ScienceOn
12 M. Lee, K. Bae, S. Kim, S. Lim, and S. Nam, Polymer (Korea), 33, 397 (2009).
13 A. P. Kulkarni, X. Kong, and S. A. Jenekhe, Adv. Func. Mater., 16, 1057 (2006).   DOI   ScienceOn
14 C. Kim, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc., 131, 9122 (2009).   DOI   ScienceOn
15 S. Ameen, M. S. Akhtar, Y. S. Kim, O.-B. Yang, and H.-S. Shin, J. Phys. Chem. C, 114, 4760 (2010).   DOI   ScienceOn
16 C. Kim, A. Facchetti, and T. J. Marks, Adv. Mater., 19, 2561 (2007).   DOI   ScienceOn
17 C. Kim, A. Facchetti, and T. J. Marks, Science, 318, 76 (2007).   DOI   ScienceOn
18 M. Schrodner, S. Sensfuss, H.-K. Roth, R.-J. Stohn, W. Clements, and A. Bernds, 88 IEEE Polytronic 2002 Conference, p.1 (2002).
19 K. Kudo, M. Yamashina, and T. Moriizumi, Jpn. J. Appl. Phys., 23, 130 (1984).   DOI
20 F. Ebisawa, T. Kurokawa, and S. Nara, J. Appl. Phys., 54. 3255 (1983).   DOI   ScienceOn
21 A. Tsumura, H. Koezuka, and T. Ando, Appl. Phys. Lett., 49, 1210 (1986).   DOI