• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1169-1175
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• 1993

Plasma spraying method was used to fabricated the microwave absorbing ferrite-silicon carbide on the aluminum-alloy of the fuselage of an aircraft to protect it from RADAR detection. In this paper 15[rm] instead of 34[rm], the mean size of SIC-powder for ferrite-silicon carbide surface films(I) was used. 50(Kg/h) Instead of 70(Kg/h), the powder feed and 100[mm] Instead of 80(mm), spray distance of spray parameters was used. This M/W absorbers were designed experimentally and fabricated trially, as a result of which the relative frequency bandwidth of 2.8% were obtained under the tolerance limits of the reflection coefficients lower than-10[dB], and the maximum absorption thickness becomes 0.5[mm], which is much thinner than that of the conventional ones.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.220-224
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• 1999

For the process control of silicon nitride gelcasting, the effect of MeOH on the apparent gel induction time of slip, drying rate, and mechanical property of gelcast body were investigated. The apparent gel induction time showed maximum at 10~20 vol% MeOH and the drying rate of gelcast body increased in the ranged of 25~40%. The gelcast body was still machinable in the 40% of MeOH, though the mechanical property and relative density slightly decreased with increasing the amount of MeOH.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.551-559
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• 1998

장경비가 큰 탄화규소를 탄소와 규소간의 고온연소반응으로 제조하기 위하여 공정변수에 따른 연소거동과 미세조직의 변화를 조사하였다. 연소합성된 생성물은 주로 $\beta$-SiC이며 연소반응이 충분히 진행되지 못하였을 경우에는 미량의 잔류 반응물과 $\alpha$-SiC가 관찰되었다. 생성된 탄화규소의 평균입도는 약 5$\mu\textrm{m}$로 작았으며, $1300^{\circ}C$ 이상의 예열 조건에서 장경비가 30이상인 탄화규소를 합성할 수 있었다. 압분 강도가 69MPa인 분말의 성형체에서 평균 연소 온도와 평균 전파 속도는 각각 약 $1425^{\circ}C$와 2.1mm/sec 범위이며, 연소 온도는 흑연 분말을 사용하였을 경우가 탄소 섬유를 사용한 경우보다 약 $10^{\circ}C$ 높았다. 연소 반응을 임의로 중단시킨 시편의 계면을 EDX와 Auger 전자 현미경으로 분석한 결과 상호 확산층이 관찰되지 않았다. 이는 탄화규조의 연소합성이 용해-석출 모델에 의하여 진행됨을 시사한다. 예열 온도에 따른 연소 반응 중의 온도 분포를 유한 요소법으로 해석함으로써 $2500^{\circ}C$의 초기 연소 개시 온도에 대하여 예열 온도 $300^{\circ}C$에서는 연소파가 거의 전파할 수 없으며 예열 온도가 $1300^{\circ}C$에서는 시료 내부에 자체 전파가 가능한 $2000^{\circ}C$이상의 온도 구역이 존재함을 알았다.

• 전기의세계
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• v.39 no.10
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• pp.20-27
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• 1990

세계적으로 기술개발과 응용이 가장 치열한 반도체 및 신소재산업의 획기적인 개발에 힘입어 반도체소자가 기본 에너지원인 태양광발전 시스템이 대체에너지원으로 가장 주목을 받고 있다. "제1세대" 태양전지인 결정질규소 태양전지는 가격하락의 한계성에 부닺쳤으며, 이를 극복하기 위한 "제2세대" 태양전지로써 비정질 규소, CdTe 및 CuInSe$_{2}$등 화합물 반도체 태양전지에 연구가 집중되고 있다.체 태양전지에 연구가 집중되고 있다.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.835-842
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• 1999

Si3N4 -Si3N4 joints were made using Ag-Cu-Ti and Ag-Cu-In-Ti via brazing method and the change in joint strength was investigated after heat treatment at $400^{\circ}C$ or $650^{\circ}C$ for up to 2000h. The initial strength of as-brazed joints with Ag-Cu-In-Ti was lower but the reduction of the strength was less dramatic than that with Ag-Cu-Ti. The joints made of a new brazing alloy Au-Ni-Cr-Mo-Fe which is developed for high temperature applications were heat-treated at $650^{\circ}C$ for 1000h. As the heat treatment time increased the bond strength increased. The results of the joining system with Mo or Cu interlayer showed that the strength of the joint with Mo interlayer was higher but the system incurred problems in joint production Also it was found from oxidation experiment that Ti and In affected the oxidation resistance of brazing alloy.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.12
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• pp.25-29
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• 1972

This experiment was carried out to investigate the role of Silicon accumlated in rice plant under different conditions of light and humidity, using radioisotopes Ca-45, Mn-54, and P-32. This results obtained in are as follows; 1. Light effect is more severe in phosphate uptake by rice plant than is calcium. Amounts of phosphate uptake in light condition is six times more than in dark conditions, while that of calcium is double. 2. Change of relative humidity affects calcium absorption and transport from root to shoot. It seems not to be influenced in phosphate and manganese uptake by relative humidity. 3. More uptake of each element Ca-45, P-32, or Mn-54 was found in the rice plant applied with silicic acid. It is considered that there must be some relationship between silicon content and ion uptake in rice plant. 4. The transport ratio of nutrient from root to shoot shows a specific pattern that calcium is approximately 1.0 manganese 0.5 and phosphate 0.2 respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.324-331
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• 1998

After the addition of yttrium aluminum garnet of 2, 5, 10 mol% as a sintering aid, $\alpha$-silicon carbides were prepared by a liquid-phase sintering at $1850^{\circ}C$, and the microstructural evolution was investigated during sintering as functions of liquid-phase amount and sintering time. The highest apparent density in each compositions was obtained in specimens sintered for 2 h, and the percentage of weight loss increased with sintering time. By increasing the amount of sintering aid (yttrium aluminum garnet), the rate of grain growth during sintering decreased, but the apparent density of sintered body increased. The phase transformation from 6H-SiC to 4H-SiC was partially observed in specimens sintered for a long time, and so, a few rod-like grains were observed.

• Resources Recycling
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• v.19 no.5
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• pp.31-43
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• 2010

To fabricate porous SiC candle filter for filtration facility of the IGCC system, the candle type filter preforms were fabricated by ramming and vacuum extrusion process. A commercially available ${\alpha}$-SiC powders with various particle size were used as starting raw materials, and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as non-clay based inorganic sintering additive. The candle typed preforms by ramming process and vacuum extrusion were sintered at $1400^{\circ}C$ for 2h in air atmosphere. The effect of forming method and particle size of filter matrix on porosity, density, strength (flexural and compressive strength) and microstructure of the sintered porous SiC candle tilters were investigated. The sintered porous SiC filters which were fabricated by ramming process have more higher density and strength than extruded filter in same particle size of the matrix, and its maximum density and 3-point bending strength were $2.00\;g/cm^3$ and 45 MPa, respectively. Also, corrosion test of the sintered candle filter specimens by different forming method was performed at $600^{\circ}C$ for 2400h using IGCC syngas atmosphere for estimation of long-term reliability of the candle filter matrix.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1993.11a
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• pp.14-14
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• 1993