• Composites Research
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• v.32 no.6
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• pp.307-313
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• 2019

Triboelectric nanogenerators (TENGs), which are combined effects of triboelectricity and electric induction, is a large-area and low-cost technology that can be applied easily in our life. In this work, we applied life supplies to TENGs and analyzed a type of chemical bonding with the ratio of C-C/C-H/C-O/C=O bonding. As the ratio of C-C bonding increases, the materials can be positively charge. On the other hands, as the ratio of C-H bonding increases, the materials can be negatively charged materials. Based on these behaviors, we got a voltage of 210V, a current of 14.6 ㎂ and a maximum power of 9.8mW. Finally, we could turn on 97 light emitting diodes (LEDs) by using a wrap as a negative material and a magnetic note as a positive material.

• Korean Chemical Engineering Research
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• v.61 no.1
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• pp.155-161
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• 2023

Ion concentration polarization (ICP) is one of the essential important mechanisms for biomolecule preconcentration devices as well as a fundamental transport phenomenon found in electrodialysis, electrochemical cell, etc. The ICP triggered by externally applied voltage enables the biomolecular analyte to be preconcentrated at an arbitrary position by a locally amplified electric field inside the microchannel. Conventional preconcentration methodologies using the ICP have two limitations: uncertain equilibrium position and hydrodynamic instability of preconcentration plug. In this work, a new preconcentration method in the dead-end microchannel around cation exchange membrane was numerically studied to resolve the limitations. As a result, the numerical model showed that the analyte was concentrated at a shock front developed in a geometrically confined dead-end channel. Furthermore, the electrokinetic behaviors for preconcentration dynamics were analyzed by changing microchannel's applied voltage and volumetric charge concentration of microchannel as key parameters to describe the dynamics. This work would provide an effective means for a point-of-care platform that requires ultra-fast preconcentration method.

• Journal of the Korean Magnetics Society
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• v.7 no.2
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• pp.76-81
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• 1997

$Cu_{0.9}Ni_{0.1}Fe_2O_4$ has been studied with Mossbauer spectroscopy and X-ray diffraction. The crystal structure is found to be a cubic spinel with the lattice constant $a_0=8.386{\AA}$. The Curie temperature is determined to be $T_c=755K$ for a heating rate of 5 K/ min. The Mossbauer spectra consist of two six-line patterns corresponding to $Fe^{3+}$ at the tetrahedral(A) and octahedral(B) sites. Debye temperatures for A and B sites are found to be 568 k and 194 K, respectively. Atomic migration of $Cu_{0.9}Ni_{0.1}Fe_2O_4$ begins near 350 K and increases rapidly with increasing temperature such a degree that 71% of the ferric ions as A sites have moved over to the B sites at 550 K.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.53.1-53.1
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• 2010

결정질 실리콘 태양전지의 효율을 향상시키기 위하여 수광면에 서로 다른 도핑농도를 가지는 고농도 도핑영역과 저농도 도핑영역으로 이루어진 emitter를 형성하는 것이 요구되며 이를 selective emitter라 칭한다. Selective emitter를 형성하면 고농도 도핑영역에서 금속전극과 저항 접촉이 잘 형성되기 때문에 직렬 저항이 최소화되고 저농도 도핑영역에서는 전하 재결합의 감소로 인하여 태양전지의 변환효율이 상승하는 이점이 있다. Selective emitter의 형성방법은 이미 다양한 방법이 제안되고 있으나, 본 연구에서는 기존에 제시된 방법과는 다르게 열산화 시 dopant redistribution에 의한 Boron depletion 현상을 이용하여 selective emitter를 형성하는 방법을 제안하였고, 이를 Simulation을 통하여 검증하였다. 초기 emitter 확산 후 junction depth는 0.478um, 면저항은 $104.2{\Omega}/sq.$ 이었으며, nitride masking layer 두께는 0.3um로 설정하였다. $1100^{\circ}C$에서 30분간 습식산화 공정을 거친 후 nitride mask가 있는 부분의 junction depth는 1.48um, 면저항은 $89.1{\Omega}/sq$의 값을 보였고, 산화막이 형성된 부분의 junction depth는 1.16um, 면저항은 $261.8{\Omega}/sq$의 값을 보였다. 위 조건의 구조를 가진 태양전지의 변환 효율은 19.28%의 값을 나타내었고 Voc, Jsc 및 fill factor는 각각 645.08mV, $36.26mA/cm^2$, 82.42%의 값을 보였다. 한편 일반적인 구조로 설정한 태양전지의 변환 효율, Voc, Isc 및 fill factor는 각각 18.73%, 644.86mV, $36.26mA/cm^2$, 80.09%의 값을 보였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.55-61
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• 1998

Organic light emitting devices from a single layer thin film with a hole transport polymer, poly(N-vinylcarbazole) (PVK) doped with 2-(4-bi phenyl)-5-(4-t-butyl-phenyl) -1,3,4-oxadiazole (Bu-PBD) as electron transporting molecules and Coumurine 6(C6), 1,1,4,4-tetraphenyl-1,3-butadiene (TPB), Rhodamine B as a emitter dye were fabricated. The sing1e layer structure and the use of soluble materials simplify the fabrication of devices by spin coating technique. The active layer consists of one polymer layer that is simply sandwiched between two electrodes, indium-tin oxide (ITO), and aluminum. In this structure, electron and hole inject from the electrodes to the PVK : Bu-PBD active layer. Respectively, Blue, green and orange colored emission spectrum by the use of TPB, C6, Rhodamine B dye emitted at 481nm, 500nm and 585nm were achieved during applied voltages. PVK materials can be useful as the host polymer to be molecularly doped with other organic dyes of the different luminescence colors. And EL color can be tuned to the full visible wavelength.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.793-798
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• 2012

In this paper, dependence of subthreshold current has been analyzed for doping distribution and channel structure of double gate(DG) MOSFET. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. Since DGMOSFETs have reduced short channel effects with improvement of current controllability by gate voltages, subthreshold characteristics have been enhanced. The control of current in subthreshold region is very important factor related with power consumption for ultra large scaled integration. The deviation of threshold voltage has been qualitatively analyzed using the changes of subthreshold current for gate voltages. Subthreshold current has been influenced by doping distribution and channel dimension. In this study, the influence of channel length and thickness on current has been analyzed according to intensity and distribution of doping.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.198-198
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• 2010

전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 기존의 TBM과 다른 형태의 staggered tunnel barrier를 제안한다. staggered tunnel barrier는 heterostructure의 에너지 밴드 구조 중 하나로 밴드 line up은 두 밴드들이 같은 방향으로 shift된 형태이다. 즉, 가전자대 에너지 장벽의 minimum이 한 쪽에 생기면 전도대 에너지 장벽의 maximum은 반대쪽에 생기는 형태를 갖는다. 이러한 밴드구조를 갖는 물질을 터널 산화막층으로 하게 되면 쓰기/지우기 속도를 증가시킬 수 있으며, 데이터 보존 능력 모두 만족할 수 있어 TBM의 터널 산화막으로의 사용이 기대된다. 본 연구에서 제작한 staggered TBM소자의 터널 산화막으로는 Si3N4/HfAlO (3/3 nm)을 사용하여 I-V(current-voltage), Retention, Endurance를 측정하여 메모리 소자로서의 특성을 분석하였으며, 제 1 터널 산화막(Si3N4)의 두께를 wet etching 시간 (0, 10, 20 sec)에 따른 메모리 특성을 비교 분석하였다.

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.58-63
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• 1995

The crystallographic and magnetic properties of the ferrimagnetic $Ni_{0.5}Co_{0.5}Fe_{2}O_{4}$ have been studied by X-ray and $M\"{o}ssbauer$ measurements. The Crystal structure is found to be spinel structure with the lattice constant $a_{0}=8.346{\pm}0.005\;{\AA}$. $M\"{o}ssbauer$ spectra of $Ni_{0.5}Co_{0.5}Fe_{2}O_{4}$ have been taken at various temperatures rallging from 13 to 780 K. The isomer shifts indicate that the valence states of the Fe ions for tetrahedral(A) and octahedral(B) sites have ferric character. Debye temperatures for the A and B sites are found to be $441{\pm}5\;K$ and $321{\pm}5\;K$, respectively. Atomic migration from the A to the B sites starts near 500 K and increases rapidly with increasing temperature to such a degree that 51 % of the ferric ions at the A sites have moved over to the B sites by 700 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.167-175
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• 1993

Lithium-Carbon Intercalation Compounds(Li-CICs) have been synthesized from various carbon ma-terials by use of the modified stainless steel two-bulbs methods. These compounds had various colours by structural character of starting materials. The synthesized Li-CICs were identified to stage formation process by X-ray diffraction data. At these results, well-oriented natural graphite and graphite fiber are formed lower stages(Stage 1, Stage 2), but poor-oriented carbon fiber and petroleum cokes are also formed higher stages(Stage 3, Stage 4, Stage 5). And when we compared with measured d value and calculated d value, these values agreed with each other. But poor-oriented carbon materials are some difference from them. The stage stability and energy stage of Li-CICs were obtained by UV/VIS Spectrophotometric data. X-ray diffraction and UV/VIS Spectrophotometric data suggested that well-oriented carbon materials has distingushible curve between energy and reflectance. In these results, we know that many charge carriers between carbon layers are related to concentration of intercalants. And then, this paper also provides information on high efficiency energy storing materials at intercalation process of Li-CICs.