• The Journal of the Convergence on Culture Technology
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• v.9 no.3
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• pp.593-599
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• 2023

Nickel oxide (NiO) nanoparticles were successfully synthesized by a simple liquid phase process for producing ceramics powder using a precursor impregnated with a nickel(II) nitrate hexahydrate aqueous solution in an industrial pulp. The microfibrile structure of the precursor impregnated with nickel nitrate hexahydrate aqueous solution was confirmed by scanning electron microscope (SEM), and the crystal structure and particle size of nickel oxide (NiO) particles produced as the heat treatment temperature of the precursor were analyzed by X-ray diffraction (XRD) and SEM. As a result, it was confirmed through XRD and SEM analysis that the temperature at which the organic material of the precursor is completely thermally decomposed was 495-500℃, and the size and crystallinity of the nickel oxide particles produced increased as the heat treatment temperature increased. The size of the nickel oxide particles obtained by heat treatment at 500-800℃ for 1 hour was 50-200 nm. It was confirmed by XRD and SEM analysis that a NiO crystal phase was formed at a heat treatment temperature of 380℃, only a single NiO phase existed until 800℃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.289-293
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• 2004

PNW-PMN-PZT ceramics were fabricated with the variations of Nb$_2$O$_{5}$ addition and their microstructural and piezoelectric characteristics were investigated. When the amount of Nb$_2$O$_{5}$ increased, grain size decreased gradually. At 0.3wt％ Nb$_2$O$_{5}$ which is the same weight percent with Fe$_2$O$_3$, maximum tetragonality(c/a) and density were shown due to the complexed doping effects. Also, this composition that showed Qm of 2,041, kp of 0.55, grain size of 2.5${\mu}{\textrm}{m}$ and $\varepsilon$r of 1704 were proper for high power application. Using this composition, Rosen-type piezoelectric transformer was fabricated as the size of 1 ${\times}$ 16 ${\times}$ 5㎣ and its electrical characteristics were investigated with the variations of load resistance and driving frequency. At the resistance of 200㏀, maximum step-up ratio of 13.68 was shown. After driving PDA CCFL for 25 min using the inverter circuit, at driving frequency of 214.4KHz, input voltage of 31.78 V and input current of 21.1mA were measured at the input part of piezoelectric transformer. And then, output voltage of 293.2 V and output current of 2.2mA were shown at the output part of piezoelectric transformer. At the same time, efficiency of 96.2％ and temperature rise of 3.5$^{\circ}C$ were appeared at the piezoelectric transformer.ormer.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.31-35
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• 2006

This paper is studied on a protective control system for electrical fire used electrical characteristics of SCR and multilayer-type PTC thermistor. The PTC thermistor has characteristic or positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_{3_}$Ceramics of positive temperature coefficient. Also PTC shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used multilayer-type PTC which is protected from electrical fire due to electric short circuit faults or overload faults. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Journal of the Korean Applied Science and Technology
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• v.34 no.2
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• pp.260-270
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• 2017

Zirconia has white color and physical, chemical stability, also using in high temperature materials and various industrial structural ceramics such as heat insulating materials and refractories due to their low thermal conductivity, excellent strength, toughness, and corrosion resistance. If hydrophobically modified zirconia is introduced into a hydrophobic acrylate coating solution, the hardness, chemical, electrical, and optical properties will be improved due to the better dispersibility of inorganic particle in organic coating media. Thus, we introduced $-CH_3$ group through silylation reaction using either trimethylchlorosilane(TMCS) or hexamethyldisilazane(HMDZ) on zirconia surface. The $Si-CH_3$ peaks derived from TMCS and HMDZ on hydrophobically modified zirconia surface was confirmed by FT-IR ATR spectroscopy, and introduction of silicon was confirmed by FE-SEM/EDS and ICP-AES. In addition, the sedimentation rate result in acrylate monomer of the modified zirconia showed the improved dispersibility. Comparison of the sizes of a pristine and the modified zirconia particles, which were clearly measured not by the normal microscope but by particle size analysis, provided a pulverizing was occurred by physical force during the silylation process. From the BET analysis data, the specific surface area of zirconia was approximately $18m^2/g$ and did not significantly change during modification process.

• Composites Research
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• v.29 no.1
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• pp.40-44
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• 2016

Nuclear fuel cladding used in a nuclear power plant must possess superior oxidation resistance in the coolant atmosphere of high temperature/high pressure. However, as was the case for the critical LOCA (loss-of-coolant accident) accident that took place in the Fukushima disaster, there is a risk of hydrogen explosion when the nuclear fuel cladding and steam reacts dramatically to cause a rapid high-temperature oxidation accompanied by generation of a huge amount of hydrogen. Hence, an active search is ongoing for an alternative material to be used for manufacturing of nuclear fuel cladding. Studies are currently aimed at improving the safety of this cladding. In particular, ceramic-based nuclear fuel cladding, such as SiC, is receiving much attention due to the excellent radiation resistance, high strength, chemical durability against oxidation and corrosion, and excellent thermal conduction of ceramics. In the present study, cladding with $SiC_f/SiC$ protective films was fabricated using a process that forms a matrix phase by polymer impregnation of polycarbosilane (PCS) after filament-winding the SiC fiber onto an existing Zry-4 cladding tube. It is analyzed the oxidation and microstructure of the metal cladding with $SiC_f/SiC$ composite protective films using a drop tube furnace for thermal shock test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.442-448
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• 2021

In this work, the (K_1-xAg_x)(Ta_0.8Nb_0.2)O₃ (x=0.1-0.4) ceramics were fabricated using mixed-oxide method, and their structural and electrical properties were measured. All specimens represented a pseudo cubic structure with the lattice constant of 0.3989 nm. When 0.4 mol of Ag was added, second phases induced from metallic Ag and K₂(Ta,Nb)₆O₁₆ phase were observed. Dielectric constant and dielectric loss of K(Ta_0.8Nb_0.2)O₃ specimen doped with 0.3 mol of Ag were 2,737 and 0.446, respectively. The curie temperature was about -5℃, which does not change with Ag addition. The remanent polarization began to decrease sharply around 12~15℃, and the temperature at which the remanent polarization began to decrease as the applied voltage increased shifted to the high temperature side. The electrocaloric effect (ΔT) and electrocaloric efficiency (ΔT/ΔE) of the (K_0.7Ag_0.3)(Ta_0.8Nb_0.2)O₃ ceramics were 0.01024℃ and 0.01825 KmV^-1, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.