• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.1
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• pp.62-71
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• 2009

In this paper, an improved drive method of piezoelectric PZT stack actuator for micro-positioning system is proposed and the performances are evaluated. This type of amplifier is based on switching technology efficiently handling the arbitrary regenerative energy from the piezoelectric actuator. The conventional voltage-feedback control method has the THD of -32dB (${\approx}2.5%$) with 100mHz sinusoidal reference, which means that the positioning performance in linearity degrades due to the hysteretic relationship between actuator voltage and the displacement. This paper proposed an improved charge-controlling method, which utilizes differential information of charge reference instead of integrating the actuator's current. The current waveform has THD under -40dBV (=1%) and the displacement waveform nearly -52dB (${\approx}0.25%$), which means that the positioning performance is very excellent. Finally, another method of the displacement feedback control has better performance than the voltage method, however there exists a limitation in performance of the system.

• Journal of IKEEE
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• v.25 no.1
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• pp.133-138
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• 2021

We propose a Ku-band three-stack CMOS power amplifier to enhance the output power and efficiency. To minimize the dc power consumption, the driver stage is designed using common-source structure. To obtain high output power and utilize a voltage combining method, the power stage is designed using stack structure. To verify the proposed power amplifier structure, we design a Ku-band power amplifier using 65-nm RFCMOS process which provide nine metal layers. The P1dB, power-added efficiency, and gain are higher than 20 dBm, 23 dB, and 25%, respectively, while the operating frequency is 14 GHz-16 GHz.

• 전기의세계
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• v.25 no.4
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• pp.12-16
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• 1976

Thyristor등의 반도체등의 전자장치를 사용하여 전력의 변환, 제어 및 개폐등을 행하는 기술분야를 1962년 Storm씨가 Solidstate Power Electronics라고 부르기 시작한 이래 급속한 발전을 이룩하여 왔음은 다 아는 사실이다. Storm씨는 1950년대에 전력제어를 위한 장치로써 가포화 리액터를 이용한 자기증폭기의 개발과 이론전개에 공헌한 분으로 전력용 반도체 소자의 개발의 필요성과 그 응용면의 가치를 가장 절실히 느끼고 있었다. 이는 자기증폭기가 무접점의 자기적 switch가 기계적인 switch에 비하여 응답속도가 빠른 것은 사실이나 400Hz 이상에서는 그 한계성을 가져왔기 때문에 새로운 소자 즉 전자적 전력 switch의 개발의 필요성을 당연하였던 것이다. 이상과 같은 소자들은 동작면에서 전압의 증폭을 대상으로 한것이 아니고 전류의 단속에 의한 전력변환을 목적으로 한 것이라고 볼 수 있다. 즉, 단위전하의 에너지로 표시되는 전압의 조정이 아니고 전하의 수를 조정하는 전류조정작용을 가지 소자라는 점에서 이들을 이용한 장치는 전류제어형이어야만 할 것이다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.287-290
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• 2006

A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.1
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• pp.13-20
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• 2001

In this appear, we proposed the new current mirror has large output resistance and excellent current matching characteristics. If supply voltage were lowered under the conventional CMOS operational amplifier, the wing of out put power could be restricted. So, the paper suggests a new way of differential operational amplifier circuit to solve the problem. The paper proposes that a new current mirror increases output swing and has a stable operation. We compare and verify characteristics of the proposed current mirror with the cascoded current mirror and the regulated current mirror through simulation.

• Proceedings of the KIEE Conference
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• summer
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• pp.1184-1186
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• 2004

Focus Electrode(FE) 기능을 갖는 진행파관 증폭기(TWTA)를 구동하기 위하여 고전압 펄스전원 장치가 필요하다. 이 전원장치는 영부터 -5.0 kV TWT 캐소드 고전압 위에서 펄스 출력으로 동작되어야 한다 고전압펄스전원장치는 바이어스 전압이 영부터 -1.5 kV사이를 연속적으로 가변 할 수 있어야 하고, 펄스의 반복 주파수는 CW로 부터 1 kHz 그리고 펄스폭은 $10\;{\mu}s$부터 $500\;{\mu}s$로 선택 가능하여야 한다. 그리고 출력펄스의 상승 및 하강 시간은 150 ns 보다 작아야 한다. 턴-온 및 오프의 스윗칭 시간을 만족시키기 위하여 고전압 스위치는 직렬로 연결된 FET 모듈을 사용하였다. 본 논문에서는 이러한 고전압 펄스전원장치의 설계 및 제작원리 그리고 시험결과에 대하여 다루었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.77-88
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• 2000

In this paper, the 3-mode variable gain high power amplifier for a transmitter of INMARSAT-B operating at L-band(1626.5-1646.5 MHz) was developed. This SSPA can amplify 42 dBm in high power mode, 38 dBm in medium power mode and 36 dBm in low power mode for INMARSAT-B. The allowable errol sets +1 dBm as the upper limit and -2 dBm as the lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier. The HP's MGA-64135 and Motorola's MRF-6401 were used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 for the high power amplifier. The SSPA was fabricated by the RP circuits, the temperature compensation circuits and 3-mode variable gain control circuits and 20 dB parallel coupled-line directional coupler in aluminum housing. In addition, the gain control method was proposed by digital attenuator for 3-mode amplifier. Then il has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. In this case, the SSPA detects the output power by 20 dB parallel coupled-line directional coupler and phase non-splitter amplifier. The realized SSPA has 41.6 dB, 37.6 dB and 33.2 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.3:1. The minimum value of the 1 dB compression point gets more than 12 dBm for 3-mode variable gain high power amplifier. A typical two tone intermodulation point has 36.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2241-2248
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• 2011

This paper describes the design of a palette-type 60watt high power amplifier module using gallium nitride(GaN) devices with high power and efficiency performances for WiMAX and LTE systems. The line-up for the high gain amplifier module consists of the pre-amplifier stage with low power and high gain, 8watt GaN driving amplifier stage, and 60watt GaN high power amplifier stage of Doherty structure with two 30watt GaN devices. The obtained gain is 61.4dB with an excellent gain flatness of ${\pm}$0.075dB over 2.5~2.68GHz. GaN devices and the Doherty structure are adopted for the improvement of high efficiency and output power. The measurement for the fabricated high power amplifier module of palette type is performed using the widely known WiMAX signal all over the world. In the example of RRH(remote radio head) application of the fabricated amplifier module, the measured efficiency is 37~38% with the 10watts of modulated output power. It is shown that when the fabricated amplifier module is activated with a digital predistorter(DPD), the measured ACLR is better than 46dBc under the 10watts of modulated output power.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1193-1200
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• 2008

This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.12
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• pp.2489-2497
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• 1994

This paper presents the development of a 10 W solid-state hybrid power amplifier(SSPA). operating over $7.7\sim8.5GHz$. The fabrication and measurement of this amplifier are performed with 3 sections, such as the front one for high gain, the middle one for driving, and high power one, to minimize the risk of failure and to increase the easiness of development. and then the final amplifier is realized by connecting 3 sections above mentioned, DC bias circuit, and temperature compensation circuit on one housing. Total small signal gain obtained is about $45\pm1dB$, the input and output return losses are 25 and 27 dB respectively. The output power measured at 1 dB gain compression point for 3 frequencies at 7.7, 8.1, and 8.5 GHz are $39.8\sim40.4dBm$, which is about 10 W. and the 3rd-order harmonic powers of 2 tones test are 13.34 dBc at output power 37.5 dBm. These obtained results satisfies the initially required specification. and the realized SSPA can be installed as a subsystem of the microwave transponder for telecommunication.