• Journal of Sensor Science and Technology
• /
• v.10 no.4
• /
• pp.239-249
• /
• 2001

LAPS is a device which is dependent on the bias potential between a pH sensitivity and alternating photocurrent. We implemented the multichannel LAPS device and the detection system which was able to effectively measure the sensor's output by a synchronized detection circuit and multiple methods. The implemented LAPS was structured the multiple sensing sites for analyzing a various components simultaneously. And the system included a time-division method using one pre-amplifier being able to detect the multichannel pH concentration preserving a high S/N ratio and a control part. System hardware consists of a pre-amplifier, digital unit and sensor unit, and software consists of a system program and PC program. As results, we verified the successful operations of system including an implemented pre-amplifier and signal processing units.

• Journal of Sensor Science and Technology
• /
• v.1 no.1
• /
• pp.53-57
• /
• 1992

We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2006.05a
• /
• pp.422-425
• /
• 2006

본 연구는 도체주변에 감겨진 광섬유 코일에 따라 선형편광축이 자기장에 의해 회전하는 Faraday Effect를 이용한 GIS(Gas Insulated Switchgear,이하 GIS) 용 광 전류센서의 구성과 DAQ(Data Acquisition,이하 DAQ)보드를 장착한 PC를 이용하여 실시간 데이터 취득, 분석 그리고 저장을 동시에 수행하였다 광원은 1310[nm]의 레이저 다이오드를 이용하였다. 센서부는 GIS에 맞게 원형으로 제작하였고 $9/125[{\mu}m]$규격 단일모드의 일반 통신용 광섬유를 지름 31[cm]의 센서부 코어에 20[회] 감아 설치하였다. PC기반의 실시간 데이터 분석 프로그래밍은 NI사의 Labview를 이용하여 코딩하였으며 PD(Photo Diode,이하 PD)의 전기적인 신호는 터미널 블록을 거쳐 NI사의 16bit DAQ M시리즈를 이용하여 수집되어진다. 직접 코딩한 프로그램을 이용하여 $700A\sim1400A$ 측정한 출력값 선형적인 증가추세를 보여주었다. 또한 OCS(Oscilloscope,이하 OCS)를 이용한 측정시스템과의 출력신호 및 정밀도를 비교 검토하였다. 그리고 Labview에서 지원하는 Web Tool기능을 이용하여 Web기반의 원거리 측정에서도 안정된 출력을 보여주었다.

• Journal of Sensor Science and Technology
• /
• v.7 no.2
• /
• pp.131-139
• /
• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.109-115
• /
• 1993

A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

• Journal of Industrial Convergence
• /
• v.20 no.12
• /
• pp.79-85
• /
• 2022

Recently, a smartphone manufactured on a flexible substrate has been released as an electronic device, and research on a stretchable electronic device is in progress. In this paper, a silicon-based stretchable material is made and used as a substrate to implement and evaluate an optical sensor device using oxide semiconductor. To this end, a substrate that stretches well at room temperature was made using a silicone-based solution rubber, and the elongation of 350% of the material was confirmed, and optical properties such as reflectivity, transmittance, and absorbance were measured. Next, since the surface of these materials is hydrophobic, oxygen-based plasma surface treatment was performed to clean the surface and change the surface to hydrophilicity. After depositing an AZO-based oxide film with vacuum equipment, an Ag electrode was formed using a cotton swab or a metal mast to complete the photosensor. The optoelectronic device analyzed the change in current according to the voltage when light was irradiated and when it was not, and the photocurrent caused by light was observed. In addition, the effect of the optical sensor according to the folding was additionally tested using a bending machine. In the future, we plan to intensively study folding (bending) and stretching optical devices by forming stretchable semiconductor materials and electrodes on stretchable substrates.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.274-274
• /
• 2010

최근 들어 나노선을 이용한 pn 접합 소자 연구 결과가 매우 활발하게 보고되고 있다. 그러나, 서로 다른 두 종류의 나노선으로 pn 접합 어레이 구조의 소자를 제작할 때, 나노선을 원하는 위치에 정렬하는 기술상의 어려움이 큰 걸림돌이 된다. 본 연구에서는 p-CNT와 n-$SnO_2$ 나노선을 이용한 pn 접합 어레이 구조를 제작할 수 있는 독창적인 공정기술을 제안한다. 먼저 $SiO_2$가 300 nm 성장된 Si 기판을 선택적으로 패터닝하여 BOE (6:1) 용액으로 $SiO_2$ 층을 80 nm 정도 선택적으로 에칭한 후, 선택적으로 에칭된 표면에 슬라이딩 장비를 이용하여 화학기상증착법(chemical vapor deposition: CVD)으로 성장된 n-$SnO_2$ 나노선을 전이시킨다. 그 다음 thermal tape를 이용하여 CVD 법으로 성장된 랜덤 네트워크 형태의 CNT를 $SnO_2$ 나노선이 전이된 기판 위에 전이 시킨다. 이때 성장된 CNT 필름 중 금속성 나노선을 통한 전하 이동을 감소시키기 위해, 촉매로 사용되는 페리틴의 농도를 낮춰서 전체적인 CNT의 농도를 줄이는 방법을 이용하였다. 따라서, 성장된 CNT 필름은 별도의 후처리 없이 p-형의 반도체성을 보였다. 제작된 pn-소자는 정류비가 ~103 인 정류특성을 보였으며, 254 nm 파장의 UV lamp를 조사하여 광전류가 발생하는 것을 확인하였다. 연구결과는 이종의 나노선 접합에 의한 다이오드 응용과 UV 센서응용 가능성을 보여준다.

• Journal of Sensor Science and Technology
• /
• v.16 no.1
• /
• pp.1-6
• /
• 2007

A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.

• Journal of Sensor Science and Technology
• /
• v.4 no.1
• /
• pp.3-8
• /
• 1995

n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about $40nA/mm^{2}$. When the device was exposed by Xe lamp whose wavelength range from 400nm to 1100nm, the maximum photo responsivity was about 0.6A/W between 600 and 700nm. Variation of the characteristics of fabricated devices after 5 weeks was negligible.

• Journal of Sensor Science and Technology
• /
• v.15 no.6
• /
• pp.397-405
• /
• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.