Journal of Sensor Science and Technology (센서학회지)
- Volume 4 Issue 1
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- Pages.3-8
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- 1995
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Fabrication of n-ITO/p-PSL heterojunction type photodetectors and their characteristics
n-ITO/p-PSL 이종접합형 광검출 소자의 제조 및 그 특성
- Kim, Hang-Kyoo (Dept. of Electronics, Kyungpook Nat'l Univ.) ;
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Shin, Jang-Kyoo
(Dept. of Electronics, Kyungpook Nat'l Univ.) ;
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Lee, Jong-Hyun
(Dept. of Electronics, Kyungpook Nat'l Univ.) ;
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Song, Jae-Won
(Dept. of Electronics, Kyungpook Nat'l Univ.)
- Published : 1995.02.28
Abstract
n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about
ITO(indium tin oxide)와 PSL(porous silicon layer)을 이용하여 n-ITO/p-PSL 이종접합형 광검출 소자를 실리콘 기판상에 제조하였다. 실리콘 질화막과 Ni-Cr/Au를 이용하여 선택적으로 양극반응을 시켰으며, 각 소자를 메사구조로 정의하여 소자간을 격리하였고 ITO를 이용하여 소자의 열화문제를 억제시켰다. 제조된 소자에 백색광을
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