• Title/Summary/Keyword: 고전압 발생회로

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Design of High voltage nano pulse generator circuit for ion shutter of particle accelerator (입자가속기 Ion gate 구동을 위한 고전압 nano-pulse 발생기 회로 설계)

  • Oh, Hyun Jun;Jeong, Ku Young;Song, Kwan Seok;Roh, Chung Wook
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.248-250
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    • 2019
  • 입자가속기는 물질의 미세 구조를 밝히기 위해 기본 입자를 가속, 충돌시키는 장치로 최근 암치료 등 의학적 용도로도 이용되고 있다. 그러나 고속으로 고압을 인가시켜야 하는 장치인 만큼 기존에 명확히 설립된 회로가 없다. 이에 본 논문에서는 Ion gate를 등가회로로 구성하여 Fast Switch 장치의 기본 회로를 제안 및 분석, 실험하였다. 또한 기본 회로에서 발생하는 문제들을 개선하고자 RC Input filter와 기타 파라미터들의 설계와 Fast switch와 Ion gate를 잇는 wire 내의 기생성분을 고찰하였고 Ion gate 구동을 위해 기준이 되는 명확한 Fast switch 회로를 제안한다.

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Zero-Voltage-Switching High Frequency Inverter for Electrodeless Fluorescent Lamp (무전극 램프 구동용 영전압 스위칭 고주파 인버터에 관한 연구)

  • Park, Dong-Hyun;Kim, Hee-Jun;Joe, Kee-Yun;Kye, Mun-Ho
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.35S no.8
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    • pp.113-119
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    • 1998
  • Driving the electrodeless fluorescent lamp, the high ac voltage with high frequency is required. The linear power amplifier has been widely used as a driving circuit of electrodeless fluorescent lamp. However, the low efficiency of the power amplifier causes the driving circuit to be replaced by a PWM switching inverter. In order to use a PWM switching inverter as the driving circuit to be replaced by a PWM switching inverter. In order to use a PWM switching inverter as the driving circuit of an electrodeless fluorescent lamp, the high switching frequency is required. But due to the switching loss at switches of the inverter, the limitation of high switching frequency appears in the inverter. One solution to this limitation is to reduce the switching loss by using the zero voltage switching technique. In this paper, zero voltage switching resonant inverter for driving an electrodeless fluorescent lamp is discussed. The results of analysis about the inverter are presented and the equations for design are established. And the validity of the analyzed results are verified through the experiment.

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A Design of Gate Drive and Protection IC for Insulated Gate Power Devices (고전력 절연 게이트 소자의 구동 및 보호용 파워 IC의 설계)

  • Ko, Min-Joung;Park, Shi-Hong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.3
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    • pp.96-102
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    • 2009
  • This paper deals with gate drive and power IC for high power devices(600V/200A and 1200V/150A). The proposed gate driver provides high gate driving capability (4 A source, 8 A sink), and over-current protected by means of power transistor desaturation detection. In addition, soft-shutdown function is added to reduce voltage overshoots due to parasitic inductance. This gate drive If is designed, fabricated, and tested using the Dongbu hitek 0.35um BCDMOS process.

A Study on Interference between High Voltage Impulse Track Circuit(HVITC) and AF Track Circuit (고전압임펄스궤도회로(HVITC)와 AF 궤도회로간의 간섭에 대한 연구)

  • Lee, Hee-Jin;Lee, Jong-Woo
    • Journal of the Korean Society for Railway
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    • v.18 no.3
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    • pp.232-240
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    • 2015
  • Two types of track circuits are used in high speed railway car depots: one is High Voltage Impulse Track Circuit(HVITC); the other is AF track circuit. HVITC detects train occupation of blocks and broken rail; the AF track circuit is used for train onboard control system pretesting before departure. This testing is used to transmit train control information through the AF track circuit. The two systems are switched in turns for testing. We propose a system in which the AF track circuit is replaced by a loop cable that is installed on the inside rail; as such, engineers do not need to switch the systems. In cases in which the two systems run simultaneously, mutual interference may occur. In this paper, we identified this mutual interference by modeling of the two circuits.

Design of a Voltage Protection Circuit for DC-DC Converter of the Potable Device Application (소형 휴대기기용 DC-DC 변환기를 위한 전압 보호회로 설계)

  • Park, Ho-Jong;Heo, Yun-Seok;Park, Yong-Su;Kim, Nam-Tae;Song, Han-Jung
    • 전자공학회논문지 IE
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    • v.49 no.1
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    • pp.18-23
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    • 2012
  • In this paper, a potable device application for DC-DC converter was designed for voltage protection circuit. Voltage protection circuit to offer the under voltage lock out and over voltage protection consists of a comparator and bais circuits were implemented using. XFAB 1um CMOS process, SPICE simulations was confirmed through the characteristics. Simulation results, under voltage lock out input voltage is 4.8 V higher when the turn-on and, 4.2 V less when turn-off. When the input voltage is low voltage is applied can be used to prevent malfunction of the circuit. Over voltage protection is 3.8 V reference voltage when the output voltage caused by blocking circuit prevents device destruction can be used to improve the stability and reliability. The virtual control circuits of the DC-DC converter connected. According to the results of the abnormal voltage, voltage protection circuit behavior was confirmed. The proposed voltage protection circuit of the DC-DC converter cell is useful are considered.

Protection Circuit Design of Electronic Ballcst for MHD Lamps (MHD 램프용 전자식 안정기의 보호 회로 설계)

  • Lee, Bong-Jin;Kim, Ki-Nam;Park, Chong-Yun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.6
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    • pp.1-6
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    • 2008
  • In this paper describes the process of designing a protection circuit against an open or short electronic ballast. An open electronic ballast creates high voltages in a regular period, which a lies voltage stress on switching devices. On the other hand, a shorted output generates excessive current, causing problems such as heat generation in the ballast and reduced lifespan of semiconductor devices. This study proposes a protection circuit consisting of TTL and passive devices to resolve the problems. The proposed protection circuit offers the benefits of low cost and high reliability. The proposed circuit was connected to an actual ballast to demonstrate its applicability.

Quasi Phase-Matched Second Harmonic-Wave Generation based on Nonlinear-Optic Effect Utilizing Ti:PPLN Optical Waveguides (Ti:PPLN 광도파로를 이용한 비선형광학 기반의 의사 위상정합 2차 조화파 발생)

  • Jung, Hong-Sik;Jung, Young-Sik
    • Korean Journal of Optics and Photonics
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    • v.19 no.6
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    • pp.408-415
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    • 2008
  • The characteristics of a ferroelectric-domain inverted grating fabricated by applying a high-voltage pulse at room temperature in Ti-diffused channel waveguides in z-cut $LiNbO_3$ (Ti:PPLN) were examined for channel waveguide quasi phase-matched secondharmonic generation devices. The fabrication conditions of uniform periodic domain-inversion were examined. Ti:PPLN with period ${\Lambda}=16.6{\mu}m$ for SHG were fabricated and the performances were measured. A normalized SHG efficiency as high as 473 (%/W) was obtained with 49 mm interaction length.

Protection of the Inverter for Electric Vehicles (전기자동차용 인버터의 보호기능)

  • Jun, Bum-su;Lee, Jae-shin;Kim, Ung-hoe;Kim, Hyoung-taek;Won, Chung-yuen
    • Proceedings of the KIPE Conference
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    • 2011.11a
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    • pp.227-228
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    • 2011
  • EV의 중요한 부품은 MCU(인버터), BMS(고전압), LCD(저전압 충전장치), OBC(완속충전장치), EWP(냉각장치), PTC(히터), A/C(에어컨) 등으로 구성되어 있으며, 특히 EV용 인버터의 경우 핵심 부품으로 신뢰성 및 보호기능에 대한 중요성이 인식되고 있다. EV 인버터는 온도(인버터, 모터), 단락과 단선, 인터락 및 최대출력제한 등에 대한 보호기능 구현이 되어 있으며, 고장발생시 고장을 진단할 수 있는 기능(DTC)이 구현되어 있다. 이러한 보호기능 중에 단락과 단선 시 인버터의 보호는 중요한 요소이며, 이를 구현하기 위한 회로설계 및 회로분석이 필요하다. 본 논문에서는 EV용 인버터에 사용되는 병렬 운전형 인버터의 단락 및 단선 시 시스템을 보호할 수 있는 드라이버 회로 설계 및 분석을 수행하며, 실험을 통해 그 결과를 검증한다.

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A Study on the Converter for MEMS Electrostatic Power Generator (MEMS 정전발전기 개발을 위한 변환소자연구)

  • Kang Hee-Jong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.2 s.344
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    • pp.1-7
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    • 2006
  • This is a preliminary study on the MEMS(Miro Electro Mechanical System) electrostatic power generator. It suggested a converting device to change from the electrostatic to the dynamic electricity. To testify, it used Silvaco simulation tools(Athena and Atlas) and fabricated the converting device. The result of the simulation and test it seems to convert electrostatic into dynamic electricity effectively.

Microstrip Line Sensor of Partial Discharge for Rotating Machine (회전기내 부분방전 검출을 위한 마이크로스트립 라인 센서)

  • Heo, Chang-Keun;Kim, Yong-Joo;Kang, No-Weon;Kang, Dong-Sik;Chae, Soo-Jeong;Jung, Hyun-Kyo
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1855-1857
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    • 2003
  • 부분방전시험은 고전압 고정자 권선의 절연상태를 검사, 평가 할 수 있는 중요한 수단이다. 전동기와 발전기에서 일어나는 절연 악화의 징후로써 부분방전이 발생되며, 이러한 부분방전 신호를 검출하기 위한 센서로 SSC(Stator Slot Couple)를 사용한다. 하지만 현재 사용되고 있는 대부분의 SSC의 경우 설계에 있어 특성 임피던스가 실제구조에서 정확히 고려되지 않는 경향이 있다. 실제로 고정자 슬롯에 부착된 마이크로스트립 센서의 특성 임피던스는 정확히 50옴으로 정합 되지 않으며 이것은 센서의 성능에 중요한 영향을 미치게 된다. 그러므로 본 논문에서는 부분방전 센서의 성능을 개선시키기 위해 결합 전송선로(Coupled transmission line)를 이용한 임피던스 정합회로를 제안하고자 한다. 제안된 센서의 성능을 입증하기 위하여 고정자 슬롯에 설치된 기존의 SSC와 임피던스 정합회로를 부착한 센서를 시뮬레이션 한 후 비교 분석하였다. 결과적으로 제안된 정합 회로는 광대역 임피던스 정합 특성을 가지며 임피던스 부정합 때문에 일어나는 기존 SSC의 성능 악화를 개선할 수 있었다.

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